Tom King Cho

6450117, Sep 17, 2002

Aug 7, 2000

09/633494

Laxman Murugesh - Fremont CA
Padmanaban Krishnaraj - San Francisco CA
Michael Cox - Davenport CA
Canfeng Lai - Fremont CA
Narendra Dubey - Santa Clara CA
Tom K. Cho - Palo Alto CA
Sudhir Ram Gondhalekar - Fremont CA
Lily L. Pang - Fremont CA

Applied Materials, Inc. - Santa Clara CA

C23C 1600

118723ME, 118723 IR, 118723 ER, 15634535, 15634536, 134 11, 438905

A substrate processing chamber comprising a first gas distributor adapted to provide a process gas into the chamber to process the substrate , a second gas distributor adapted to provide a cleaning gas into the chamber to clean the chamber, and an exhaust to exhaust the process gas or cleaning gas from the chamber.

7074298, Jul 11, 2006

May 17, 2002

10/150581

Sudhir Gondhalekar - Fremont CA, US
Tom K. Cho - Palo Alto CA, US
Rolf Guenther - Monte Sereno CA, US
Shigeru Takehiro - Chiba, JP
Masayoshi Nohira - Chiba, JP
Tetsuya Ishikawa - Santa Clara CA, US
Ndanka O. Mukuti - Santa Clara CA, US

Applied Materials - Santa Clara CA

H01L 21/306
C23C 16/00

15634548, 118723 I

The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is at least about 0. 15, more desirably about 0. 2–0. 25.

7141138, Nov 28, 2006

Jul 28, 2003

10/630989

Sudhir Gondhalekar - Fremont CA, US
Padmanabhan Krishnaraj - San Francisco CA, US
Tom K. Cho - Palo Alto CA, US
Muhammad Rasheed - Fremont CA, US
Hemant Mungekar - San Jose CA, US
Thanh N. Pham - San Jose CA, US
Zhong Qiang Hua - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/306
C23C 16/00
C23F 1/00

15634533, 118715

The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

7279049, Oct 9, 2007

Feb 5, 2004

10/775769

Andrzej Kaszuba - San Jose CA, US
Sophia M. Velastegui - Sunnyvale CA, US
Visweswaren Sivaramakrishnan - Santa Clara CA, US
Pyongwon Yim - Sunnyvale CA, US
Mario David Silvetti - Morgan Hill CA, US
Tom K. Cho - Palo Alto CA, US
Indrajit Lahiri - Santa Clara CA, US
Surinder S. Bedi - Fremont CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/00
C23F 1/00
H01L 21/306

118728, 15634551, 15634555, 118730, 118733

In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

7354501, Apr 8, 2008

May 17, 2002

10/150458

Sudhir Gondhalekar - Fremont CA, US
Tom K. Cho - Palo Alto CA, US
Rolf Guenther - Monte Sereno CA, US
Steve H. Kim - Union City CA, US
Mehrdad Moshfegh - San Jose CA, US
Shigeru Takehiro - Chiba, JP
Thomas Kring - Sunnyvale CA, US
Tetsuya Ishikawa - Santa Clara CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/00
H01L 21/306

15634548, 118723 I

The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a substantially flat dome top. A top RF coil is disposed above the dome top, and has an outer loop which is larger in size than the substrates to be processed in the chamber. A cold plate is disposed above the top RF coil, and is larger in size than the substrates to be processed in the chamber.

7425716, Sep 16, 2008

Apr 27, 2006

11/414649

Alexandros T. Demos - Fremont CA, US
Khaled A. Elsheref - San Jose CA, US
Yuri Trachuk - San Jose CA, US
Tom K. Cho - Palo Alto CA, US
Girish A. Dixit - San Jose CA, US
Hichem M'Saad - Santa Clara CA, US
Derek Witty - Fremont CA, US

Applied Materials, Inc. - Santa Clara CA

H02H 23/00

2504923, 261233, 261234

Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.

7498268, Mar 3, 2009

Oct 23, 2006

11/552129

Sudhir Gondhalekar - Fremont CA, US
Padmanabhan Krishnaraj - San Francisco CA, US
Tom K. Cho - Palo Alto CA, US
Muhammad Rasheed - Fremont CA, US
Hemant Mungekar - San Jose CA, US
Thanh N. Pham - San Jose CA, US
Zhong Qiang Hua - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/461
H01L 21/302

438712, 438710, 257E51044

The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

7566891, Jul 28, 2009

Mar 15, 2007

11/686878

Juan Carlos Rocha-Alvarez - Sunnyvale CA, US
Thomas Nowak - Cupertino CA, US
Dale R. Du Bois - Los Gatos CA, US
Sanjeev Baluja - San Francisco CA, US
Scott A. Hendrickson - Brentwood CA, US
Dustin W. Ho - Fremont CA, US
Andrzei Kaszuba - San Jose CA, US
Tom K. Cho - Palo Alto CA, US

Applied Materials, Inc. - Santa Clara CA

G01N 21/00
G01N 21/33
B01J 19/08
B29C 35/08

250504R, 250365, 25049212, 2504922, 2504931

Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.