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Thai Le Phones & Addresses

  • 1174 Wenlock Dr, San Jose, CA 95122
  • Sunnyvale, CA

Resumes

Resumes

Thai Le Photo 1

Tax Specialist

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Location:
San Jose, CA
Industry:
Accounting
Work:
Security Industry Specialists, Inc. May 2011 - Dec 2011
Security

Dnn Tax Services May 2011 - Dec 2011
Tax Specialist
Skills:
Security
Police
Tax Preparation
Thai Le Photo 2

Robotic Engineering Technician

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Location:
San Jose, CA
Work:

Robotic Engineering Technician
Thai Le Photo 3

Senior Principal Engineer

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Location:
San Francisco, CA
Industry:
Semiconductors
Work:
Rambus
Senior Principal Engineer

Ibm Jun 2008 - Jul 2013
Senior Custom Circuit Design Engineer

Qimonda 2006 - 2008
Senior Staff Design Engineer

Infineon Technologies 2001 - 2005
Staff Design Engineer

Infineon Technologies 1999 - 2001
Senior Design Engineer
Skills:
Cmos
Physical Design
Ic
Asic
Vlsi
Semiconductors
Timing Closure
Circuit Design
Perl
Cadence Virtuoso
Spice
Analog Circuit Design
Vhdl
Semiconductor Industry
Simulations
Microprocessors
Debugging
Testing
Hardware Architecture
Static Timing Analysis
Computer Architecture
Drc
Embedded Systems
C
Sram
Rtl Design
Processors
Integrated Circuit Design
Thai Le Photo 4

Chief Creative Officer

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Location:
San Francisco, CA
Industry:
International Trade And Development
Work:
Foxean Unity Solutions
Chief Creative Officer
Thai Le Photo 5

Thai Le

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Thai Le Photo 6

Thai Le

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Thai Le Photo 7

Thai Le

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Thai Le

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Publications

Us Patents

Exchange-Coupled Magnetoresistive Sensor With A Coercive Ferrite Layer And An Oxide Underlayer Having A Spinal Lattice Structure

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US Patent:
6992866, Jan 31, 2006
Filed:
Aug 31, 2004
Appl. No.:
10/931315
Inventors:
Matthew Joseph Carey - San Jose CA, US
Eric Edward Fullerton - Morgan Hill CA, US
Bruce Alvin Gurney - San Rafael CA, US
Thai Le - San Jose CA, US
Stefan Maat - San Jose CA, US
Philip Milton Rice - San Jose CA, US
Assignee:
Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam
International Classification:
G11B 5/39
US Classification:
36032411
Abstract:
An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.

Stability-Enhancing Underlayer For Exchange-Coupled Magnetic Structures, Magnetoresistive Sensors, And Magnetic Disk Drive Systems

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US Patent:
7116532, Oct 3, 2006
Filed:
Nov 9, 2004
Appl. No.:
10/985195
Inventors:
Matthew Joseph Carey - San Jose CA, US
Eric Edward Fullerton - Morgan Hill CA, US
Bruce Alvin Gurney - San Rafael CA, US
Thai Le - San Jose CA, US
Stefan Maat - San Jose CA, US
Philip Milton Rice - San Jose CA, US
Assignee:
Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam
International Classification:
G11B 5/39
US Classification:
36032411
Abstract:
An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.

Stability-Enhancing Underlayer For Exchange-Coupled Magnetic Structures, Magnetoresistive Sensors, And Magnetic Disk Drive Systems

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US Patent:
20020154456, Oct 24, 2002
Filed:
Apr 24, 2001
Appl. No.:
09/841942
Inventors:
Matthew Carey - San Jose CA, US
Eric Fullerton - Morgan Hill CA, US
Bruce Gurney - San Rafael CA, US
Thai Le - San Jose CA, US
Stefan Maat - San Jose CA, US
Philip Rice - San Jose CA, US
International Classification:
G11B005/39
US Classification:
360/324110, 360/324120, 360/324200
Abstract:
An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.

Stability-Enhancing Underlayer For Exchange-Coupled Magnetic Structures, Magnetoresistive Sensors, And Magnetic Disk Drive Systems

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US Patent:
20050036244, Feb 17, 2005
Filed:
Sep 27, 2004
Appl. No.:
10/951397
Inventors:
Matthew Carey - San Jose CA, US
Eric Fullerton - Morgan Hill CA, US
Bruce Gurney - San Rafael CA, US
Thai Le - San Jose CA, US
Stefan Maat - San Jose CA, US
Philip Rice - San Jose CA, US
International Classification:
G11B005/127
G11B005/33
US Classification:
360324120
Abstract:
An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.
Thai T Le from San Jose, CADeceased Get Report