Son Thanh Le

7123506, Oct 17, 2006

Jun 3, 2004

10/860902

Xizeng Shi - Fremont CA, US
Son Le - Gilroy CA, US
Po-Kang Wang - San Jose CA, US
Tai Min - San Jose CA, US

Applied Spintronics Technology, Inc. - Milpitas CA
Headway Technologies, Inc. - Milpitas CA

G11C 11/00

365158, 365171

A method and system for programming a magnetic memory is disclosed. The method and system further include turning on a word line current and turning on a bit line current. The word line current is for generating at least one hard axis field. The bit line current is for generating at least one easy axis field. In one aspect, the method and system further include turning off the word line current and the bit line current such that a state of the at least one magnetic memory cell is repeatably obtained. In another aspect, the word line current is turned off after the bit line current is turned off.

20210025958, Jan 28, 2021

Sep 28, 2020

17/035153

- Hsinchu, TW
Luc Thomas - San Jose CA, US
Guenole Jan - San Jose CA, US
Son Le - Gilroy CA, US

G01R 33/60

A ferromagnetic resonance (FMR) measurement method is disclosed wherein a magnetic film or stack of layers is patterned into elongated structures having a length along a long axis. A magnetic field (H) is applied in two different orientations with respect to the long axis (in-plane parallel and perpendicular to the long axis) or one orientation may be perpendicular-to-plane. In another embodiment, H is applied parallel to a first set of elongated structures with a long axis in the x-axis direction, and perpendicular to a second set of elongated structures with a long axis in the y-axis direction. From the difference in measured resonance frequency (Δfr) (for a fixed magnetic field and sweeping through a range of frequencies) or the difference in measured resonance field (ΔHr) (for a fixed microwave frequency and sweeping through a range of magnetic field amplitudes), magnetic saturation Ms is determined using formulas of demagnetizing factors.

20200393525, Dec 17, 2020

Aug 31, 2020

17/008228

- Hsinchu, TW
Son Le - Gilroy CA, US
Luc Thomas - San Jose CA, US
Santiago Serrano Guisan - San Jose CA, US

G01R 33/24
G01N 24/10
G01R 33/60
G01N 24/00

A scanning ferromagnetic resonance (FMR) measurement system is disclosed with a radio frequency (RF) probe and one or two magnetic poles mounted on a holder plate and enable a perpendicular-to-plane or in-plane magnetic field, respectively, at test locations. While the RF probe tip contacts a magnetic film on a whole wafer under test (WUT), a plurality of microwave frequencies (f) is sequentially transmitted through the probe tip. Simultaneously, a magnetic field (H) is applied to the contacted region thereby causing a FMR condition in the magnetic film for each pair of (H, f) values. RF output signals are transmitted through or reflected from the magnetic film to a RF diode and converted to voltage signals which a controller uses to determine effective anisotropy field, linewidth, damping coefficient, and/or inhomogeneous broadening for a sub-mm area. The WUT is moved to preprogrammed locations to enable multiple FMR measurements at each test location.

20200386840, Dec 10, 2020

Aug 24, 2020

17/001476

- Hsinchu, TW
Luc Thomas - San Jose CA, US
Son Le - Gilroy CA, US
Guenole Jan - San Jose CA, US

G01R 33/60
G01R 33/24
G01R 33/345

A ferromagnetic resonance (FMR) measurement system is disclosed with a plurality of “m” RF probes and one or more magnetic assemblies to enable a perpendicular-to-plane or in-plane magnetic field (H) to be applied simultaneously with a sequence of microwave frequencies (f) at a plurality of “m” test locations on a magnetic film formed on a whole wafer under test (WUT). A FMR condition occurs in the magnetic film (stack of unpatterned layers or patterned structure) for each pair of (H, f) values. RF input signals are distributed to the RF probes using RF power distribution or routing devices. RF output signals are transmitted through or reflected from the magnetic film to a plurality of “n” RF diodes where 1≤n≤m, and converted to voltage signals which a controller uses to determine effective anisotropy field, linewidth, damping coefficient, and/or inhomogeneous broadening at the predetermined test locations.

20200379522, Dec 3, 2020

Sep 27, 2019

16/586814

- Cupertino CA, US
Joel D. Barrera - San Jose CA, US
Houtan R. Farahani - San Ramon CA, US
Jerzy S. Guterman - Sunnyvale CA, US
Richard P. Howarth - San Francisco CA, US
Mariel L. Lanas - Palo Alto CA, US
Son C. Le - Sunnyvale CA, US
Michael D. McBroom - Leander TX, US
Rodrigo Dutervil Mubarak - Austin TX, US
Sabrina K. Paseman - Saratoga CA, US
Chentian Zhu - San Jose CA, US
James M. Cuseo - Cupertino CA, US

G06F 1/18
G06F 1/20
H01Q 1/22
H01Q 5/30

A housing for an electronic device can include a body having an exterior surface and a second surface disposed opposite the exterior surface at least partially defining an interior volume, the body defining a first repeating pattern of apertures extending from the exterior surface to the second surface. The housing can also include a component defining a second repeating pattern of apertures, the component positioned adjacent to the second surface. The first repeating pattern of apertures and the second repeating pattern of apertures can combine to define an open area of at least about 70%.

20200116811, Apr 16, 2020

Oct 16, 2018

16/161166

- Hsinchu, TW
Luc Thomas - San Jose CA, US
Guenole Jan - San Jose CA, US
Son Le - Gilroy CA, US

G01R 33/60

A ferromagnetic resonance (FMR) measurement method is disclosed wherein a magnetic film or stack of layers is patterned into elongated structures having a length along a long axis. A magnetic field (H) is applied in two different orientations with respect to the long axis (in-plane parallel and perpendicular to the long axis) or one orientation may be perpendicular-to-plane. In another embodiment, H is applied parallel to a first set of elongated structures with a long axis in the x-axis direction, and perpendicular to a second set of elongated structures with a long axis in the y-axis direction. From the difference in measured resonance frequency (Δfr) (for a fixed magnetic field and sweeping through a range of frequencies) or the difference in measured resonance field (ΔHr) (for a fixed microwave frequency and sweeping through a range of magnetic field amplitudes), magnetic saturation Ms is determined using formulas of demagnetizing factors.

20200049787, Feb 13, 2020

Aug 7, 2018

16/056783

- Hsinchu, TW
Luc Thomas - San Jose CA, US
Son Le - Gilroy CA, US
Guenole Jan - San Jose CA, US

G01R 33/60
G01R 33/345
G01R 33/24

A ferromagnetic resonance (FMR) measurement system is disclosed with a plurality of “m” RF probes and one or more magnetic assemblies to enable a perpendicular-to-plane or in-plane magnetic field (H) to be applied simultaneously with a sequence of microwave frequencies (f) at a plurality of “m” test locations on a magnetic film formed on a whole wafer under test (WUT). A FMR condition occurs in the magnetic film (stack of unpatterned layers or patterned structure) for each pair of (H, f) values. RF input signals are distributed to the RF probes using RF power distribution or routing devices. RF output signals are transmitted through or reflected from the magnetic film to a plurality of “n” RF diodes where ≤n≤m, and converted to voltage signals which a controller uses to determine effective anisotropy field, linewidth, damping coefficient, and/or inhomogeneous broadening at the predetermined test locations.

20190331752, Oct 31, 2019

Jul 9, 2019

16/506024

- Hsinchu, TW
Luc Thomas - San Jose CA, US
Son Le - Gilroy CA, US
Guenole Jan - San Jose CA, US

G01R 33/60
G01R 33/345
G01R 31/3185

A ferromagnetic resonance (FMR) measurement system is disclosed with a waveguide transmission line (WGTL) connected at both ends to a mounting plate having an opening through which the WGTL is suspended. While the WGTL bottom surface contacts a portion of magnetic film on a whole wafer, a plurality of microwave frequencies is sequentially transmitted through the WGTL. Simultaneously, a magnetic field is applied to the contacted region thereby causing a FMR condition in the magnetic film. After RF output is transmitted through or reflected from the WGTL to a RF detector and converted to a voltage signal, effective anisotropy field, linewidth, damping coefficient, and/or inhomogeneous broadening are determined based on magnetic field intensity, microwave frequency and voltage output. A plurality of measurements is performed by controllably moving the WGTL or wafer and repeating the simultaneous application of microwave frequencies and magnetic field at additional preprogrammed locations on the magnetic film.