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Sen Liu

from Brentwood, NY
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Related to:
Ming Yu, 61Chiwai Wai Yu, 62Jason OuYang Liu, 37
Connected to:
Adela Liu, 73Alec X Liu, 39Alpha T Liu, 46Amon Y Liu, 58Andrea Y Liu, 46Anqi Liu, 39Arden K Liu, 64Ba S Liu, 62Bailu Liu, 35Ban Liu, 48

Sen Liu Phones & Addresses

  • Brentwood, NY
  • Jamaica, NY
  • Oakland Gdns, NY
  • Oakland Gdns, NY
  • 3220 Utopia Pkwy, Flushing, NY 11358 (607) 232-2210

Work

Position: Healthcare Support Occupations

Education

Degree: High school graduate or higher

Resumes

Resumes

Sen Liu Photo 1

Chemical Process Engineer

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Position:
Process Engineer at China Huanqiu Contracting & Engineering Corp. (HQC)
Location:
Beijing City, China
Industry:
Chemicals
Work:
China Huanqiu Contracting & Engineering Corp. (HQC) - Beijing, China since Dec 2011
Process Engineer
Education:
Tsinghua University
Sen Liu Photo 2

Sen Liu

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Sen Liu Photo 3

Sen Liu

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Sen Liu

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Location:
United States

Publications

Us Patents

Photoresist Composition For Negative Development And Pattern Forming Method Using Thereof

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US Patent:
20130164680, Jun 27, 2013
Filed:
Feb 22, 2013
Appl. No.:
13/774625
Inventors:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY, US
Sen Liu - Highland Park NJ, US
Wai-Kin Li - Beacon NY, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
G03F 7/004
US Classification:
4302801, 4302701, 430325
Abstract:
The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer and a radiation sensitive acid generator. The imaging polymer includes a first monomeric unit having a pendant acid labile moiety and a second monomeric unit containing a reactive ether moiety, an isocyanide moiety or an isocyanate moiety. The patterning forming method utilizes an organic solvent developer to selectively remove unexposed regions of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Near-Infrared Absorbing Film Compositions

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US Patent:
20140210034, Jul 31, 2014
Filed:
Apr 2, 2014
Appl. No.:
14/243238
Inventors:
- Armonk NY, US
Martin Glodde - Mahwah NJ, US
Dario L. Goldfarb - Dobbs Ferry NY, US
Wai-Kin Li - Beacon NY, US
Sen Liu - Piscataway NJ, US
Libor Vyklicky - Brno, CZ
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
G03F 7/038
H01L 51/44
US Classification:
257437, 4302801, 430322, 430325
Abstract:
A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
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Sen Liu from Brentwood, NY Get Report