Sang W Nam

20130126476, May 23, 2013

Mar 15, 2012

13/420949

Alexei Marakhtanov - Fremont CA, US
Rajinder Dhindsa - Fremont CA, US
Ryan Bise - Fremont CA, US
Lumin Li - Fremont CA, US
Sang Ki Nam - Fremont CA, US
Jim Rogers - Fremont CA, US
Eric Hudson - Fremont CA, US
Gerardo Delgadino - Fremont CA, US
Mike Kellogg - Fremont CA, US
Anthony de la LIera - Fremont CA, US

LAM RESEARCH CORPORATION - Fremont CA

C23F 1/00
C23F 1/08

216 67, 15634527

A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.

20130127124, May 23, 2013

Mar 13, 2012

13/419369

Sang Ki Nam - Fremont CA, US
Rajinder Dhindsa - Fremont CA, US
Alexei Marakhtanov - Fremont CA, US

LAM RESEARCH CORPORATION - Fremont CA

B23B 31/28
H05K 13/00

279128, 29825

Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface, a peripheral RF feed configured to deliver RF power, the peripheral RF feed having a first portion contacting a periphery of the facility plate and an RF strap coupling the peripheral RF feed to an RF source.

20130128409, May 23, 2013

Feb 23, 2012

13/403760

Sang Ki Nam - Danville CA, US
Rajinder Dhindsa - San Jose CA, US
James Rogers - Los Gatos CA, US

Lam Research Corporation - Fremont CA

H01L 21/683

361234

Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, and a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface. A hollow RF feed is configured to deliver RF power, the hollow RF feed defined by a first portion contacting a periphery of the facility plate and a second portion coupled to the first portion, the second portion extending away from the chuck assembly.

20180107117, Apr 19, 2018

Oct 14, 2016

15/294348

- Santa Clara CA, US
Sang Ki NAM - Danville CA, US
Ludovic GODET - Sunnyvale CA, US

G03F 7/20
G03F 7/004
G03F 7/32

Methods disclosed herein provide apparatus and methods for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes. In one embodiment, an apparatus includes a processing chamber configured to apply an electric field to a substrate via a non-gas phase intermediate medium. Methods described herein include dissociation of a photoacid generator to generate anions and cations. The anions may be moved within the photoresist layer by the electric field to more precisely control the speed and location of acid generation and regeneration processes.

20180046085, Feb 15, 2018

Oct 25, 2017

15/793935

- Santa Clara CA, US
Sang Ki NAM - Danville CA, US
Christine Y. OUYANG - Santa Clara CA, US

G03F 7/38

Embodiments described herein generally relate to methods for mitigating patterning defects. More specifically, embodiments described herein relate to utilizing field guided post exposure bake processes to mitigate microbridge photoresist defects. An electric field may be applied to a substrate being processed during a post exposure bake process. Photoacid generated as a result of the exposure may be moved along a direction defined by the electric field. The movement of the photoacid may contact microbridge defects and facilitate the removal of the microbridge defects from the surface of a substrate.

20180005852, Jan 4, 2018

Sep 12, 2017

15/702541

- Fremont CA, US
Sang Ki Nam - Danville CA, US
Alexei Marakhtanov - Albany CA, US
Eric A. Hudson - Berkeley CA, US

H01L 21/67
H01J 37/32
H01L 21/3065

The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material.

20170213747, Jul 27, 2017

Sep 20, 2013

14/033241

- Fremont CA, US
Sang Ki Nam - Danville CA, US
Alexei Marakhtanov - Albany CA, US
Eric A. Hudson - Berkeley CA, US

Lam Research Corporation - Fremont CA

H01L 21/67
H01L 21/3065

The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material.

20170184976, Jun 29, 2017

Oct 11, 2016

15/290992

- Santa Clara CA, US
Sang Ki NAM - Danville CA, US
Ludovic GODET - Sunnyvale CA, US

G03F 7/20

Methods disclosed herein provide apparatus and methods for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes. In one embodiment, an apparatus includes a processing chamber configured to apply an electric field to a substrate via a non-gas phase intermediate medium. Methods described herein include dissociation of a photoacid generator to generate anions and cations. The anions may be moved within the photoresist layer by the electric field to more precisely control the speed and location of acid generation and regeneration processes.