Sam Lee

7413992, Aug 19, 2008

May 23, 2006

11/440163

Sok Kiow Tan - Newark CA, US
Shenjian Liu - Fremont CA, US
Harmeet Singh - Fremont CA, US
Sam Do Lee - Fremont CA, US
Linda Fung-Ming Lee - Redwood City CA, US

Lam Research Corporation - Fremont CA

H01L 21/302

438706, 438659, 438714, 438719, 438738, 216 60, 216 79, 156345

The embodiments provides an improved tungsten silicide etching process with reduced etch rate micro-loading effect. In one embodiment, a method for etching a layer formed on a substrate is provided. The method includes providing a substrate into a plasma processing chamber, the substrate having a metal silicide layer formed thereon and a patterned mask defined over the metal silicide layer. The method also includes supplying an etching gas mixture of a fluorine-containing gas, a chlorine-containing gas, a nitrogen-containing gas, and an oxygen-containing gas to the plasma processing chamber, wherein the ratio of the nitrogen-containing gas to the fluorine-containing gas is between about 5 to about 15. In addition, the method includes generating a plasma in the plasma processing chamber using the supplied etching gas mixture to etch the metal silicide layer in regions not covered by the patterned mask, the patterned mask defining dense regions and isolated regions, wherein the generated plasma is configured to remove the metal silicide layer in the dense regions and the isolated regions at a reduced etch rate micro-loading.

20110022388, Jan 27, 2011

Jul 27, 2009

12/509797

Sung Fong Solomon WU - Sunnyvale CA, US
Aaron TONG - San Jose CA, US
Sam C. LEE - San Jose CA, US

G10L 15/00

704246, 704E15001

In an example embodiment, there is disclosed an apparatus comprising an audio interface configured to receive an audio signal, a data interface is configured to communicate with at least one social graph, and logic is coupled to the audio interface and the data interface. The logic is configured to identify a calling party. The logic is further configured to acquire data representative of a called party from the audio signal. The logic is configured to initiate a search of the at least one social graph for the data representative of the called party to identify the called party responsive to acquiring the data representative of the called party.

20120084172, Apr 5, 2012

Oct 1, 2010

12/896776

Sam H. Lee - Menlo Park CA, US
Erik C. Smith - Menlo Park CA, US

Alta Energy, Inc. - Menlo Park CA

G06Q 30/00

705 263, 705 261

Disclosed herein are methods and systems for operating an exchange service for renewable energy resources. In one embodiment, an exchange service, implemented on an exchange entity server, receives inputs from property entities related to assets available for installation of a renewable energy setup. The exchange server places this asset in a marketplace, allowing other provider entities to place a bid for installing the renewable energy setup at a location associated with the asset. Examples of the provider entities include a developer entity, a manufacturer entity, a financier entity, etc. In embodiments, the marketplace enables interaction among the provider entities to enable the provider entities to develop and place a composite bid for a selected asset available through the marketplace.

20210407811, Dec 30, 2021

Nov 29, 2018

16/766256

- Fremont CA, US
Zhongkui TAN - Fremont CA, US
Qian FU - Pleasanton CA, US
Sam Do LEE - Newark CA, US

H01L 21/3065
H01L 21/311

A method for forming a stair-step structure in a stack on a substrate is provided. The method comprises at least one stair step cycle. Each stair step cycle comprises trimming the mask and etching the stack. Etching the stack is provided in a plurality of cycles wherein each cycle comprises etching a SiOlayer and etching a SiN layer. Etching a SiOlayer comprises flowing a SiOetching gas into the plasma processing chamber, wherein the SiOetching gas comprises a hydrofluorocarbon, an inert bombardment gas, and at least one of SFand NF, generating a plasma from the SiOetching gas, providing a bias, and stopping the SiOlayer etch. The etching a SiN layer comprises flowing a SiN etching gas into the plasma processing chamber, comprising a hydrofluorocarbon and oxygen, generating a plasma from the SiN etching gas, providing a bias, and stopping the SiN layer etch.

20190008096, Jan 10, 2019

Sep 25, 2017

15/715111

- Portola Valley CA, US
Sam Lee - Portola Valley CA, US

A01G 7/04
H05B 33/08

Disclosed is a spectral deficiency-driven control system in a plant growth automation, the system comprising: a facilities resource management system; a processor; a memory element coupled to the processor; encoded instructions; wherein the system is further configured to: over a network, receive at least one of a facility systems data; based on the received facility systems data, control an action via the facilities resource management system; wherein the received facility systems data is gathered via at least one facility sensor configured to detect facility-incoming and, or facility-generated light spectra and a sensor manager for determining a deficiency in light spectra; and wherein the actions controlled by the facilities resource management system is augmenting at least one of a spectral output of at least one light-emitting diode (LED) channel from at least one LED light source; light brightness; and, or a light height adjustment, based on the spectral deficiency.