US Patent:
20110309354, Dec 22, 2011
Inventors:
Zhong L. Wang - Marietta GA, US
Suman Das - Atlanta GA, US
Sheng Xu - Atlanta GA, US
Dajun Yuan - Atlanta GA, US
Rui Guo - Atlanta GA, US
Yaguang Wei - Atlanta GA, US
Wenzhuo Wu - Atlanta GA, US
Assignee:
GEORGIA TECH RESEARCH CORPORATION - Atlanta GA
International Classification:
H01L 33/26
H01L 33/04
H01L 21/36
B82Y 40/00
US Classification:
257 43, 438104, 438 46, 977901, 257E33005, 257E33013, 257E21461
Abstract:
In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.
