Lu Ping Chen

6542047, Apr 1, 2003

Dec 5, 2000

09/729380

Lu Chen - Brooklyn NY
Radha Setty - Staten Island NY
Daxiong Ji - Brooklyn NY

Mini-Circuits - Brooklyn NY

H01P 516

333119, 336170

A 90 degree splitter which covers a wide frequency range of 1500 to 2500 Mhz in a small footprint of only 0. 2 inches by 0. 2 inches. This device does not use any capacitors which greatly simplifies the construction and lowers the cost in comparison to conventional splitters.

6965280, Nov 15, 2005

May 21, 2004

10/850511

Lu Chen - Brooklyn NY, US

H03H007/38

333131, 333119, 333118

A three way power splitter that has a small package size. The three way power splitter includes a multi-layered low temperature co-fired ceramic substrate. An input transformer and three output transformers are attached to the top of the substrate. The transformers have wires that are attached to terminals on the top of the substrate. Three resistors are located on the top surface of the substrate under the transformers. A capacitor is located within the substrate. Terminals are also located on the bottom of the substrate. Several conductive vias extend through the substrate and connect the resistors, the capacitor and the terminals.

7049905, May 23, 2006

Jul 6, 2004

10/884510

Lu Chen - Brooklyn NY, US

Scientific Components Coporation - Brooklyn NY

H01P 3/08
H01P 5/18

333116, 333246

A directional coupler has a multi-layered low temperature co-fired ceramic substrate. A circuit line is located on one of the layers and is connected to an input port and an output port. Another circuit line is located on a different layer and is connected to a forward coupled port and a reverse coupled port. The circuit lines are located close to each other such that they are electromagnetically coupled. Ground planes are located on the top and bottom surfaces of the substrate.

7218186, May 15, 2007

Mar 29, 2004

10/810416

Lu Chen - Brooklyn NY, US

Scientific Components Corporation - Brooklyn NY

H01P 3/08
H01P 5/18

333116, 333246

A directional coupler for low frequencies that is small and can handle high power levels. The directional coupler includes a pair of circuit lines having an input port, an output port, a forward coupled port and a reverse coupled port. The circuit lines are located proximate to each other such that they are electromagnetically coupled. A low pass filter is connected to the forward coupled port. The low pass filter shifts the operating frequency of the directional coupler.

20060164181, Jul 27, 2006

Jan 24, 2005

11/040793

Lu Chen - Brooklyn NY, US

H01P 5/18

333116000

A directional coupler that has improved coupling flatness. The directional coupler includes a first, second and third coupler. Each of the couplers has an input port, an output port, a forward coupled port and a reverse coupled port. The forward coupled port of the first coupler is connected to the input port of the second coupler. The reverse coupled port of the first coupler is connected to ground. The output port of the second coupler is connected to the input port of the third coupler. The output port of the third coupler forms a second forward coupled port. The second and third couplers reduce the variation in coupling over a frequency range.

20120235116, Sep 20, 2012

Jul 30, 2010

13/387713

Jie Su - Edison NJ, US
Olga Kryliouk - Sunnyvale CA, US
Yuriy Melnik - Santa Clara CA, US
Hidehiro Kojiri - Sunnyvale CA, US
Lu Chen - Sunnyvale CA, US
Tetsuya Ishikawa - Saratoga CA, US

H01L 33/04
C30B 25/02
H01B 1/02
C30B 25/08

257 13, 438 47, 118729, 117 88, 420591, 252512, 257E33008

One embodiment of a quantum well structure comprises an active region including active layers that comprise quantum wells and barrier layers wherein some or all of the active layers are p type doped. P type doping some or all of the active layers improves the quantum efficiency of III-V compound semiconductor light emitting diodes by locating the position of the P-N junction in the active region of the device thereby enabling the dominant radiative recombination to occur within the active region. In one embodiment, the quantum well structure is fabricated in a cluster tool having a hydride vapor phase epitaxial (HVPE) deposition chamber with a eutectic source alloy. In one embodiment, the indium gallium nitride (InGaN) layer and the magnesium doped gallium nitride (Mg—GaN) or magnesium doped aluminum gallium nitride (Mg—AlGaN) layer are grown in separate chambers by a cluster tool to avoid indium and magnesium cross contamination. Doping of group III-nitrides by hydride vapor phase epitaxy using group III-metal eutectics is also described. In one embodiment, a source is provided for HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the source including a liquid phase mechanical (eutectic) mixture with a group III species. In one embodiment, a method is provided for performing HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the method including using a liquid phase mechanical (eutectic) mixture with a group III species.