Ngoc T Le

7125796, Oct 24, 2006

Nov 30, 2004

11/000832

Donald F. Weston - Phoenix AZ, US
William J. Dauksher - Mesa AZ, US
Ngoc V. Le - Gilbert AZ, US

Motorola, Inc. - Schaumburg IL

H01L 21/4763
H01L 21/461

438637, 257E21218, 257E21577, 257E21313, 257E216, 257E21024

A process is provided for fabricating a via between bonded wafers without undercutting an organic bonding material. The process for forming the via in a structure including a dielectric material and an organic bonding material , comprises forming a resist material on the dielectric layer and etching through the dielectric layer and the organic bonding material with 60CF/20Ar/60CHF/20N. The resist may then be removed with an anisotropic high density oxygen plasma.

7163888, Jan 16, 2007

Nov 22, 2004

10/995800

Kathy A. Gehoski - Gilbert AZ, US
William J. Dauksher - Mesa AZ, US
Ngoc V. Le - Gilbert AZ, US
Douglas J. Resnick - Gilbert AZ, US

Motorola, Inc. - Schaumburg IL

H01L 21/4763

438627, 438641, 438654

A direct imprinting process for Step and Flash Imprint Lithography includes providing () a substrate (); forming () an etch barrier layer () on the substrate; patterning () the etch barrier layer with a template () while curing with ultraviolet light through the template, resulting in a patterned etch barrier layer and a residual layer () on the substrate; and performing () an etch to substantially remove the residual layer. Optionally, a patterning layer () may be formed on the substrate () prior to forming the etch barrier layer (). Additionally, an adhesive layer () may be applied () between the substrate () and the etch barrier layer ().

7378346, May 27, 2008

Mar 22, 2006

11/387468

Ngoc V. Le - Gilbert AZ, US
Jeffrey H. Baker - Chandler AZ, US
Diana J. Convey - Laveen AZ, US
Paige M. Holm - Phoenix AZ, US
Steven M. Smith - Gilbert AZ, US

Motorola, Inc. - Schaumburg IL

H01L 21/302
H01L 21/461

438689, 216 2, 216 67, 356480

A method is provided for forming a monolithically integrated optical filter, for example, a Fabry-Perot filter, over a substrate (). The method comprises forming a first mirror () over the substrate (). A plurality of etalon material layers () are formed over the mirror (), and a plurality of etch stop layers () are formed, one each between adjacent etalon material layers (). A photoresist is patterned to create an opening () over the top etalon material layer () and an etch () is performed down to the top etch stop layer (). An oxygen plasma () may be applied to convert the etch stop layer () within the opening () to silicon dioxide (). The photoresist patterning, etching, and applying of an oxygen plasma may be repeated as desired to obtain the desired number of levels (). A second mirror () is then formed on each of the levels ().

20050277066, Dec 15, 2005

Jun 10, 2004

10/866563

Ngoc Le - Gilbert AZ, US
William Dauksher - Mesa AZ, US
Doug Resnick - Gilbert AZ, US

G03F007/00
G03F007/36

430316000, 430313000

A selective etch process for step and flash imprint lithography includes providing () a substrate (); forming () a transfer layer () on the substrate; forming () an etch barrier layer () on the transfer layer; patterning () the etch barrier layer with a template () while curing with ultraviolet light through the template, resulting in a patterned etch barrier layer and a residual layer () on the transfer layer; performing () an etch to substantially remove the residual layer; and performing () an etch with a mixture of nitrogen and hydrogen, and more preferably NH, to substantially remove the portion of the transfer layer not underlying the etch barrier layer.