Ngoc Thi Minh Le

6357022, Mar 12, 2002

Oct 11, 2000

09/686044

Thang Nguyen - Santa Ana CA
Ngoc Le - Mission Viejo CA
Benjamin E. Chou - Irvine CA

Kingston Technology Co. - Fountain Valley CA

H02H 305

714 42

Memory modules such as SIMMs and DIMMs are automatically tested by a target-system motherboard such as a PC motherboard. An automated SIMM/DIMM handler is connected to a handler adaptor board that is mounted to the back or solder-side of the PC motherboard. The relatively flat surface of the solder-side of the PC motherboard allows close mounting of the handler. One or more of the SIMM sockets on the motherboard is removed to provide mounting holes for the handler adaptor board. The handler adaptor board provides electrical connection from the module-under-test (MUT) in the handler to the removed SIMM socket on the PC motherboard. The handler adaptor board provides a slight spacing or offset from the solder-side surface of the PC motherboards substrate, allowing the handler to be plugged directly into tester-connectors on the handler adaptor board. Since the offset of the adaptor board is slight, the length of electrical connections to the handler is short, minimizing the load on the PCs memory bus. A handler controller card that controls the handler is plugged into the PCI or ISA bus on the PC motherboard.

7125796, Oct 24, 2006

Nov 30, 2004

11/000832

Donald F. Weston - Phoenix AZ, US
William J. Dauksher - Mesa AZ, US
Ngoc V. Le - Gilbert AZ, US

Motorola, Inc. - Schaumburg IL

H01L 21/4763
H01L 21/461

438637, 257E21218, 257E21577, 257E21313, 257E216, 257E21024

A process is provided for fabricating a via between bonded wafers without undercutting an organic bonding material. The process for forming the via in a structure including a dielectric material and an organic bonding material , comprises forming a resist material on the dielectric layer and etching through the dielectric layer and the organic bonding material with 60CF/20Ar/60CHF/20N. The resist may then be removed with an anisotropic high density oxygen plasma.

7163888, Jan 16, 2007

Nov 22, 2004

10/995800

Kathy A. Gehoski - Gilbert AZ, US
William J. Dauksher - Mesa AZ, US
Ngoc V. Le - Gilbert AZ, US
Douglas J. Resnick - Gilbert AZ, US

Motorola, Inc. - Schaumburg IL

H01L 21/4763

438627, 438641, 438654

A direct imprinting process for Step and Flash Imprint Lithography includes providing () a substrate (); forming () an etch barrier layer () on the substrate; patterning () the etch barrier layer with a template () while curing with ultraviolet light through the template, resulting in a patterned etch barrier layer and a residual layer () on the substrate; and performing () an etch to substantially remove the residual layer. Optionally, a patterning layer () may be formed on the substrate () prior to forming the etch barrier layer (). Additionally, an adhesive layer () may be applied () between the substrate () and the etch barrier layer ().

7209310, Apr 24, 2007

Jul 25, 2005

11/188947

Chun Sei Tsai - Tustin CA, US
Ngoc Le - Fountain Valley CA, US
Jenghung Chen - Cupertino CA, US
Hien Chu - Santa Ana CA, US

Western Digital Technologies, Inc. - Lake Forest CA

G11B 21/02

360 75, 360 7808

A disk drive is disclosed comprising a disk having a plurality of servo sectors defining a plurality of servo tracks, wherein each servo sector comprises a track address identifying a corresponding servo track. A head is actuated over the disk, and a ramp is positioned near an outer diameter of the disk, wherein an edge of the ramp extends over a plurality of the servo tracks. The head is loaded from the ramp onto the disk, and a track address in at least one of the servo sectors is detected and stored. The process is repeated a number of times, and then a starting track proximate an outer diameter of the disk is identified in response to the detected and stored track addresses.

7378346, May 27, 2008

Mar 22, 2006

11/387468

Ngoc V. Le - Gilbert AZ, US
Jeffrey H. Baker - Chandler AZ, US
Diana J. Convey - Laveen AZ, US
Paige M. Holm - Phoenix AZ, US
Steven M. Smith - Gilbert AZ, US

Motorola, Inc. - Schaumburg IL

H01L 21/302
H01L 21/461

438689, 216 2, 216 67, 356480

A method is provided for forming a monolithically integrated optical filter, for example, a Fabry-Perot filter, over a substrate (). The method comprises forming a first mirror () over the substrate (). A plurality of etalon material layers () are formed over the mirror (), and a plurality of etch stop layers () are formed, one each between adjacent etalon material layers (). A photoresist is patterned to create an opening () over the top etalon material layer () and an etch () is performed down to the top etch stop layer (). An oxygen plasma () may be applied to convert the etch stop layer () within the opening () to silicon dioxide (). The photoresist patterning, etching, and applying of an oxygen plasma may be repeated as desired to obtain the desired number of levels (). A second mirror () is then formed on each of the levels ().

7663939, Feb 16, 2010

May 30, 2006

11/442818

Henry Nguyen - Fountain Valley CA, US
Ngoc Le - Irvine CA, US

Kingston Technology Corporation - Fountain Valley CA

G11C 7/00

36518911, 365222

A memory module is disclosed. The memory module comprises a voltage supply; a memory interface coupled to the voltage supply; a plurality of memory components; and a voltage stabilizer converter (VSC) coupled to the memory interface and to the plurality of memory components, the VSC for ensuring that the plurality of memory components operate at their optimum performance level. A voltage stabilizer memory module (VSMM) in accordance with the present invention includes a printed circuit board (PCB) that contains memory chips, discrete components, a voltage stabilizer converter, and other related components. The voltage stabilizer converter uses system voltage supply as its input and its output is the voltage supply for the DRAM components. Accordingly, the VSSM is more adaptable, more stable and has better performance than conventional memory modules.

8396998, Mar 12, 2013

Dec 10, 2010

12/965699

Jerry N. Le - Irvine CA, US
Ngoc V. Le - Irvine CA, US
Tat Leung Lai - Torrance CA, US
Ramon S. Co - Trabuco Canyon CA, US

Kingston Technology Corp. - Fountain Valley CA

G06F 3/00
G06F 5/00

710 15, 710 2, 710 17

A diagnostic extender card is plugged into a memory module socket on a personal computer (PC) motherboard. The extender card has a test socket that receives a memory module and an intercepting decoder chip that receives the chip-select (CS) from the motherboard that selects the memory module for access. When CS is activated, the intercepting decoder chip illuminates a visual indicator on the extender card, allowing a user to locate a memory module being accessed. The exact translation or mapping from logical addresses of test programs to physical addresses of the memory modules is not needed, since the visual indicator shows which memory module is really being accessed, regardless of proprietary address mapping by north bridge chips. Operating system memory accesses are filtered out by a counter that counts accesses during a period set by a timer. When the number of accesses exceeds a threshold, the visual indicator is lit.

20050277066, Dec 15, 2005

Jun 10, 2004

10/866563

Ngoc Le - Gilbert AZ, US
William Dauksher - Mesa AZ, US
Doug Resnick - Gilbert AZ, US

G03F007/00
G03F007/36

430316000, 430313000

A selective etch process for step and flash imprint lithography includes providing () a substrate (); forming () a transfer layer () on the substrate; forming () an etch barrier layer () on the transfer layer; patterning () the etch barrier layer with a template () while curing with ultraviolet light through the template, resulting in a patterned etch barrier layer and a residual layer () on the transfer layer; performing () an etch to substantially remove the residual layer; and performing () an etch with a mixture of nitrogen and hydrogen, and more preferably NH, to substantially remove the portion of the transfer layer not underlying the etch barrier layer.