Professional Records
Lawyers & Attorneys
Michael J Duane - Lawyer
View pageLicenses:
Dist. of Columbia - Active 1989
Michael Duane Phones & Addresses
-
710 Saint Robby Dr, Mansfield, TX 76063 (214) 763-4981
-
10040 Spokane Cir, Dallas, TX 75229 (214) 358-3788
Ranks
Licence:
Dist. of Columbia - Active
Date:
1989
Resumes
Resumes
Buyer At Aquion Energy
View pagePosition:
Buyer at Aquion Energy
Location:
Pittsburgh, Pennsylvania
Industry:
Staffing and Recruiting
Work:
Aquion Energy - Greater Pittsburgh Area since Oct 2012
Buyer
E-SAFE Consulting, Inc. - Greater Pittsburgh Area Nov 2011 - Oct 2012
Technical Recruiter
Tri Pac, Inc Dec 2010 - Sep 2011
Production Planning and Material Control
Tri Pac, Inc Apr 2009 - Dec 2010
Purchasing Supervisor
Tri Pac, Inc Jul 2008 - Apr 2009
Company Development
Buyer
E-SAFE Consulting, Inc. - Greater Pittsburgh Area Nov 2011 - Oct 2012
Technical Recruiter
Tri Pac, Inc Dec 2010 - Sep 2011
Production Planning and Material Control
Tri Pac, Inc Apr 2009 - Dec 2010
Purchasing Supervisor
Tri Pac, Inc Jul 2008 - Apr 2009
Company Development
Education:
University of Virginia 2004 - 2007
B.A.
B.A.
Publications
Us Patents
High Density Cmos Integrated Circuit Manufacturing Process
View pageUS Patent:
46777393, Jul 7, 1987
Filed:
Nov 29, 1984
Appl. No.:
6/676351
Inventors:
Robert R. Doering - Plano TX
Michael P. Duane - Houston TX
Gregory J. Armstrong - Houston TX
Michael P. Duane - Houston TX
Gregory J. Armstrong - Houston TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21265
H01L 2978
H01L 2704
H01L 2978
H01L 2704
US Classification:
29576B
Abstract:
A semiconductor device such as a dynamic read/write memory or the like is made by a twin-well CMOS process that employs a minimum number of photomasks. Field oxide isolation areas are formed in nitride-framed recesses so a relatively plane surface is provided, and a minimum of encroachment occurs. Both P-channel and N-channel transistors are constructed with silicided, ion-implanted, source/drain regions, self-aligned to the gates, employing an implant after sidewall oxide is in place, providing lightly-doped drains. The threshold voltages of the P-channel and N-channel transistors are established by the tank implants rather than by separate ion-implant steps for threshold adjust.