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Man Biu Ng

from Jackson Heights, NY
Age ~94

Man Ng Phones & Addresses

  • 3344 76Th St, Jackson Heights, NY 11372 (718) 429-4311
  • Flushing, NY
  • New York, NY
  • East Meadow, NY
  • Mineola, NY

Professional Records

Lawyers & Attorneys

Man Ng Photo 1

Man Ng - Lawyer

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Office:
Kwok, Ng & Chan
ISLN:
919747799
Admitted:
1991
Man Ng Photo 2

Man Ng - Lawyer

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Office:
Shaw & Ng
ISLN:
919761771
Admitted:
1983

Resumes

Resumes

Man Ng Photo 3

Sales Associate

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Location:
New York, NY
Industry:
Marketing And Advertising
Work:
Adidas May 2015 - Aug 2015
Sales Associate

Luxottica Nov 2014 - Aug 2015
Sales Consultant

Financial Women's Association Oct 2014 - Oct 2014
Marketing Research Intern

Shangri-La Lily Spa Green Tara Spa May 2014 - Aug 2014
Social Media Strategist Intern
Education:
Baruch College 2011 - 2014
Bachelors, Bachelor of Business Administration, Business Administration, Marketing, Management
Fulton - Montgomery Community College 2009 - 2011
Associates, Associate of Arts, Business Administration, Management, Business Administration and Management
Skills:
Market Research
Social Media Marketing
Advertising
Consumer Behaviour
Marketing Strategy
Customer Service
Direct Marketing
International Marketing
Media Planning
Budget
Survey Design
Swot Analysis
Creative Strategy
Sales
Digital Marketing
Crm
Pos
Inventory Accuracy
Interests:
Strategies
Animation
Movie
Social Media
Photography
Drawing
Languages:
Cantonese
Mandarin
Man Ng Photo 4

Man Ng

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Location:
New York, NY
Industry:
Fine Art
Education:
City University of New York - Brooklyn College 2009 - 2011
Bachelors, Bachelor of Arts, Economics, Finance
Binghamton University 2003 - 2007
Bachelors, Bachelor of Arts, Studio Art
Man Ng Photo 5

Man Ng

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Location:
New York, NY
Industry:
Architecture & Planning
Man Ng Photo 6

Senior Specialist, Quality Engineering

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Location:
New York, NY
Industry:
Defense & Space
Work:
L3Harris Technologies
Senior Specialist, Quality Engineering

Telephonics Corporation Apr 1, 2013 - Jun 2018
Senior Quality Engineer and Team Leader

Pall Life Sciences Jul 2008 - Apr 2013
Quality Engineer Ii

Bae Systems Oct 2007 - Jul 2008
Quality Assurance Engineer

Aerco International, Inc. Feb 1, 2005 - Oct 1, 2007
Quality Engineer
Education:
Long Island University 2014 - 2016
Master of Science, Masters, Management, Engineering
Stony Brook University 2000 - 2004
Bachelors, Bachelor of Science, Mechanical Engineering
Skills:
Six Sigma
Quality Assurance
Process Excellence
Lean Manufacturing
Quality System
Root Cause Analysis
Manufacturing
Continuous Improvement
Design of Experiments
Fmea
Engineering
Process Improvement
Iso
Green Belt
Fda
Minitab
Gmp
Validation
Iso 13485
Dmaic
Process Engineering
Quality Control
Spc
Capa
Quality Auditing
Quality Systems
Cqa
Change Control
Corrective and Preventive Action
U.s. Food and Drug Administration
Quality Engineering
Statistics
Doe
Documentation
Supplier Quality
Cgmp
Man Ng Photo 7

Man Ng

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Man Ng Photo 8

Man Ng

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Man Ng Photo 9

Man Ng

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Skills:
Fraud
Risk Management
Man Ng Photo 10

Man Kit Ng Brooklyn, NY

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Work:
ABI health care agency
Queens, NY
Aug 2014 to Dec 2014
File Clerk

Education:
Fort Hamilton
Brooklyn, NY
2008 to 2011
high school diploma

Skills:
Microsoft Word

Business Records

Name / Title
Company / Classification
Phones & Addresses
Man Ng
Owner
China Acupuncture
Offices and Clinics of Health Practitioners
139 Canal St # 308, New York, NY 10002
Website: chinaacupuncture.net
Man Ng
Owner
China Acupuncture
Offices of Misc Health Practitioners
139 Canal St RM 308, New York, NY 10002
(212) 941-1926
Man Kit Ng
In Hair Inc
Real Estate · Beauty Shop
13628 39 Ave, Flushing, NY 11354
136-28 39 Ave, Flushing, NY 11354
34 Chrissy Ct, Staten Island, NY 10310
(718) 961-3835
Man Ng
PRECIOUS ACUPUNCTURE CARE PC
Health Practitioner's Office
3409 White Pln Rd, Bronx, NY 10467
34 White Pln Rd, Bronx, NY 10473
Man Tat Ng
SUN CROWN, INC
10 E 33 St, New York, NY 10016
Man Kai Ng
128 MOTT STREET SPORTS WEAR INC
128 Mott St 7/F, New York, NY 10013
Man Chung Ng
BROADTRADE CORP
Whol Nondurable Goods
149-37 Ash Ave, Flushing, NY 11355
139-15 38 Rd APT 1D, Flushing, NY 11354
14937 Ash Ave, Flushing, NY 11355
PO Box 620717, Flushing, NY 11362
Man W Ng
EPISTEMIC INTERNATIONAL PTY. LTD., INC
Man Ng
Owner
China Acupuncture
Offices and Clinics of Health Practitioners
139 Canal St # 308, New York, NY 10002
Website: chinaacupuncture.net

Publications

Us Patents

Efuse Enablement With Thin Polysilicon Or Amorphous-Silicon Gate-Stack For Hkmg Cmos

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US Patent:
8329515, Dec 11, 2012
Filed:
Dec 28, 2009
Appl. No.:
12/647888
Inventors:
Bin Yang - Mahwah NJ, US
Man Fai Ng - Poughkeepsie NY, US
Assignee:
Globalfoundries Inc. - Grand Cayman
International Classification:
H01L 21/82
US Classification:
438132, 257350
Abstract:
An eFUSE is formed with a gate stack including a layer of embedded silicon germanium (eSiGe) on the polysilicon. An embodiment includes forming a shallow trench isolation (STI) region in a substrate, forming a first gate stack on the substrate for a PMOS device, forming a second gate stack on an STI region for an eFUSE, forming first embedded silicon germanium (eSiGe) on the substrate on first and second sides of the first gate stack, and forming second eSiGe on the second gate stack. The addition of eSiGe to the eFUSE gate stack increases the distance between the eFUSE debris zone and an underlying metal gate, thereby preventing potential shorting.

Semiconductor Devices Having Stressor Regions And Related Fabrication Methods

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US Patent:
8394691, Mar 12, 2013
Filed:
Jun 11, 2010
Appl. No.:
12/814346
Inventors:
Bin Yang - Mahwah NJ, US
Man Fai Ng - Poughkeepsie NY, US
Assignee:
Globalfoundries, Inc. - Grand Cayman
International Classification:
H01L 21/8238
US Classification:
438198, 438303, 438938, 257E21431, 257E21433
Abstract:
Apparatus for semiconductor device structures and related fabrication methods are provided. One method for fabricating a semiconductor device structure involves forming a gate structure overlying a region of semiconductor material, wherein the width of the gate structure is aligned with a crystal direction of the semiconductor material. The method continues by forming recesses about the gate structure and forming a stress-inducing semiconductor material in the recesses.

Short Channel Semiconductor Devices With Reduced Halo Diffusion

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US Patent:
8445342, May 21, 2013
Filed:
Jun 23, 2010
Appl. No.:
12/821507
Inventors:
Bin Yang - Mahwah NJ, US
Man Fai Ng - Poughkeepsie NY, US
Assignee:
Globalfoundries Inc. - Grand Cayman
International Classification:
H01L 21/338
US Classification:
438183, 438290, 438302, 438595, 257E21437
Abstract:
A short channel semiconductor device is formed with halo regions that are separated from the bottom of the gate electrode and from each other. Embodiments include implanting halo regions after forming source/drain regions and source/drain extension regions. An embodiment includes forming source/drain extension regions in a substrate, forming source/drain regions in the substrate, forming halo regions under the source/drain extension regions, after forming the source drain regions, and forming a gate electrode on the substrate between the source/drain regions. By forming the halo regions after the high temperature processing involved informing the source/drain and source/drain extension regions, halo diffusion is minimized, thereby maintaining sufficient distance between halo regions and reducing short channel NMOS Vt roll-off.

Etsoi With Reduced Extension Resistance

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US Patent:
8518758, Aug 27, 2013
Filed:
Mar 18, 2010
Appl. No.:
12/726889
Inventors:
Bin Yang - Mahwah NJ, US
Man Fai Ng - Poughkeepsie NY, US
Assignee:
GLOBALFOUNDRIES Inc. - Grand Cayman
International Classification:
H01L 27/12
US Classification:
438151, 438459, 438300, 438163, 438311
Abstract:
A semiconductor is formed on an SOI substrate, such as an extremely thin SOI (ETSOI) substrate, with increased extension thickness. Embodiments include semiconductor devices having an epitaxially formed silicon-containing layer, such as embedded silicon germanium (eSiGe), on the SOI substrate. An embodiment includes forming an SOI substrate, epitaxially forming a silicon-containing layer on the SOI substrate, and forming a gate electrode on the epitaxially formed silicon-containing layer. After gate spacers and source/drain regions are formed, the gate electrode and underlying silicon-containing layer are removed and replaced with a high-k metal gate. The use of an epitaxially formed silicon-containing layer reduces SOI thickness loss due to fabrication process erosion, thereby increasing extension thickness and lowering extension resistance.

Lubricant Base Stocks Based On Block Copolymers And Processes For Making

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US Patent:
8598102, Dec 3, 2013
Filed:
Dec 21, 2010
Appl. No.:
12/974564
Inventors:
Abhimanyu Onkar Patil - Westfield NJ, US
Margaret May-Som Wu - Skillman NJ, US
Satish Bodige - Wayne NJ, US
Man Kit Ng - Annandale NJ, US
Assignee:
ExxonMobil Research and Egineering Company - Annandale NJ
International Classification:
C10M 145/24
C08G 65/26
US Classification:
508579, 508591, 525185
Abstract:
Provided is a block copolymer having an “A” block of a functionalized hydrocarbon moiety including one or more functional end groups selected from the group consisting of: epoxides, amines, acids, acid chlorides, acid anhydrides, halogens, vinyl or vinylidene double bond, aromatic rings and thiols, and a “B” block of a functionalized polyether moiety including one or more functional end groups selected from the group consisting: epoxides, amines, acids, acid chlorides, acid anhydrides, halogens, vinyl or vinylidene double bond, aromatic rings and thiols. The end group of the polyether moiety is different than the end group of the hydrocarbon moiety, and the hydrocarbon moiety and the polyether moiety are copolymerizable therewith. Preferably, the hydrocarbon moiety is a poly-α-olefin and the polyether moiety is a polyalkylene glycol.

Thermocleavable Friction Modifiers And Methods Thereof

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US Patent:
20180037840, Feb 8, 2018
Filed:
Aug 7, 2017
Appl. No.:
15/670891
Inventors:
- New Brunswick NJ, US
- Annandale NJ, US
Yingyue Zhang - New Brunswick NJ, US
Shuji Luo - Basking Ridge NJ, US
Man Kit Ng - Basking Ridge NJ, US
Alan Schilowitz - Highland Park NJ, US
Anne Marie Shough - Conroe TX, US
Assignee:
Rutgers, The State University of New Jersey - New Brunswick NJ
ExxonMobil Research and Engineering Company - Annandale NJ
International Classification:
C10M 169/04
C10M 129/95
C07C 69/533
C07C 69/02
C07C 69/612
C07C 69/708
C10M 105/00
C10M 129/72
Abstract:
Certain embodiments of the invention provide a lubricating oil composition comprising a lubricating oil base stock and a compound of formula (I):or a salt thereof, wherein R, R, Rand Rhave any of the values defined in the specification, as well as methods of use thereof.

Lubricating Oil Compositions With Engine Wear Protection And Solubility

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US Patent:
20160208186, Jul 21, 2016
Filed:
Jan 18, 2016
Appl. No.:
14/997808
Inventors:
Alan M. Schilowitz - Highland Park NJ, US
Man Kit Ng - Basking Ridge NJ, US
David J. Baillargeon - Cherry Hill NJ, US
Chen Chen - State College PA, US
Harry R. Allcock - State College PA, US
Andrew R. Hess - York PA, US
Assignee:
ExxonMobil Research and Engineering Company - Annandale NJ
International Classification:
C10M 137/16
C07F 9/6593
C10M 169/04
C10M 107/02
C10M 137/10
Abstract:
A method for improving wear control in an engine or other mechanical component lubricated with a lubricating oil by using as the lubricating oil a formulated oil. The formulated oil has a composition that includes a lubricating oil base stock as a major component; and at least one phosphazene represented by the formulaas a minor component. In the above formula, Q is nitrogen, sulfur or oxygen; a is a value from about 2 to about 6, c is a value from about 2 to about 6, e is a value from about 2 to about 6, g is a value from about 2 to about 6, i is a value from about 2 to about 6, and k is a value from about 2 to about 6; b is a value of 2a+q, d is a value of 2c+r, f is a value of 2e+s, h is a value of 2g+t, j is a value of 2i+u, and l is a value of 2k+v; q, r, s, t, u and v are independently a value of 0 or −2; with the proviso that not all of a, c, e, g, i and k are the same value. A lubricating oil having a composition that includes a lubricating oil base stock as a major component; and at least one phosphazene represented by the above formula as a minor component. The lubricating oil is useful in internal combustion engines.

Lubricating Oil Compositions With Engine Wear Protection

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US Patent:
20160186089, Jun 30, 2016
Filed:
Dec 28, 2015
Appl. No.:
14/979719
Inventors:
Alan M. Schilowitz - Highland Park NJ, US
David J. Baillargeon - Cherry Hill NJ, US
Tabassumul Haque - Deptford NJ, US
Peter W. Jacobs - Flemington NJ, US
Dalia Yablon - Sharon MA, US
Man Kit Ng - Basking Ridge NJ, US
Barbara A. Carfolite - Wallingford PA, US
Dana J. Gary - Sarnia, CA
Andrew Konicek - Whitehouse Station NJ, US
Assignee:
ExxonMobil Research and Engineering Company - Annandale NJ
International Classification:
C10M 169/04
C10M 137/10
C10M 129/50
C10M 135/10
C10M 105/02
C10M 129/40
Abstract:
A method for improving wear control, while maintaining or improving fuel efficiency, in an engine or other mechanical component lubricated with a lubricating oil by using as the lubricating oil a formulated oil. The formulated oil has a composition including a lubricating oil base stock as a major component, and (i) at least one transition metal salt of a carboxylic acid (e.g., zinc stearate) or (ii) a mixture of at least one transition metal salt of a carboxylic acid (e.g., zinc stearate) and at least one detergent (i.e., an alkali metal or alkaline earth metal salt of an organic acid, or an alkali metal or alkaline earth metal salt of an inorganic acid, or an alkali metal or alkaline earth metal salt of a phenol, or mixtures thereof (e.g., calcium salicylate and/or magnesium sulfonate)), as a minor component. The lubricating oils are useful in internal combustion engines.
Man Biu Ng from Jackson Heights, NY, age ~94 Get Report