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Ling Ling Ma

from El Monte, CA
Age ~73
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Also known as:
Ling L Ma, Lingling Ma, Lin G Ma, Ling Ling, Ma Ling Ling, Ma L Ling, Ma Ling Lynn
Phone and address:
4021 Peck Rd, El Monte, CA 91732
(626) 586-6349
Related to:
Kenneth H Wong, 62Nellie H Chen, 65Chenyung C Yung, 67Chingwan W LinJohn C Chen, 68Yi Chen Ma, 44Mark W Ma, 61Jeffrey Ma
Connected to:
Aileen F Ma, 33Alex Ma, 36Alexander C Ma, 76Aliza X Ma, 38Anila T Ma, 42Anny S Ma, 57Arick C Ma, 51Arleen C Ma, 49Bao P Ma, 73Barry K Ma, 69

Ling Ma Phones & Addresses

  • 4021 Peck Rd, El Monte, CA 91732 (626) 586-6349
  • 119 Arthur Ave, Arcadia, CA 91007 (626) 294-0545
  • Temple City, CA
  • Azusa, CA
  • San Gabriel, CA
  • Los Angeles, CA
  • Azusa, CA
  • 4021 Peck Rd, El Monte, CA 91732

Work

Position: Medical Professional

Education

Degree: Graduate or professional degree

Professional Records

Medicine Doctors

Ling Ma Photo 1

Ling Ma

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Specialties:
Hematology/Oncology
Work:
Rocky Mountain Cncr Centers @ MdtwnRocky Mountain Cancer Centers
11750 W 2 Pl STE 150, Denver, CO 80228
(303) 430-2700 (phone), (303) 930-5539 (fax)

Rocky Mountain Cancer Centers
11750 W 2 Pl Plz1 STE 100, Denver, CO 80228
(303) 430-2700 (phone), (303) 430-2770 (fax)
Education:
Medical School
Shandong Med Univ, Jinan, Shandong, China (242 46 Prior 1 1 71)
Graduated: 1994
Procedures:
Bone Marrow Biopsy
Chemotherapy
Conditions:
Hemolytic Anemia
Hodgkin's Lymphoma
Iron Deficiency Anemia
Malignant Neoplasm of Female Breast
Multiple Myeloma
Languages:
Arabic
Chinese
English
Spanish
Description:
Dr. Ma graduated from the Shandong Med Univ, Jinan, Shandong, China (242 46 Prior 1 1 71) in 1994. She works in Lakewood, CO and 1 other location and specializes in Hematology/Oncology. Dr. Ma is affiliated with Lutheran Medical Center and St Anthony Hospital.

Resumes

Resumes

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Ling Ma

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Work:
United States
Ling Ma Photo 3

Ling Ma

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Work:
United States
Education:
New York University
Ling Ma Photo 4

Ling Ma

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Ling Ma Photo 5

Ling Ma

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Location:
United States
Ling Ma Photo 6

Ling Ma

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Location:
United States

Business Records

Name / Title
Company / Classification
Phones & Addresses
Ling Dong Ma
President
Musek, Inc
Beauty Shop
227 W Vly Blvd, San Gabriel, CA 91776
Ling Li Ma
President
DERMA PLUS SKIN CARE, INC
Misc Personal Services Beauty Shop
300 S Atlantic Blvd STE 106, Monterey Park, CA 91754
300 S Atl Blvd, Monterey Park, CA 91754
(626) 284-6268
Ling Hsiao Ma
President
CHARLEY MORGAN INC
2664 Stingle Ave #A, Rosemead, CA 91770
1736 E 23 St, Los Angeles, CA 90058
Ling Ling Ma
President
SATVISION TECHNOLOGY INT'L., INC
Advertising Representative
4021 Peck Rd, El Monte, CA 91732
(626) 579-7010
Ling Ling Ma
President
SATVISION TRAVEL, INC
9537 E Gidley St, Temple City, CA 91780
Ling Ma
President
MA LING FASHION DESIGN USA CORP
1216 S Garfield Ave #102, Alhambra, CA 91801

Publications

Us Patents

Split Electrode Gate Trench Power Device

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US Patent:
7423317, Sep 9, 2008
Filed:
Jul 24, 2006
Appl. No.:
11/491743
Inventors:
Hugo R. G. Burke - PontyClun, GB
David Paul Jones - South Glamorgan, GB
Ling Ma - Torrance CA, US
Robert Montgomery - South Glamorgan, GB
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 29/739
US Classification:
257331, 257330, 257329, 257332, 257E29131, 257E29201, 438270, 438271
Abstract:
A power semiconductor device which includes gate liners extending along gate insulation liners and an insulation block spacing the two gate liners.

Method For Fabricating A Semiconductor Device

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US Patent:
7524726, Apr 28, 2009
Filed:
Aug 15, 2006
Appl. No.:
11/504740
Inventors:
Ling Ma - Torrance CA, US
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 21/336
US Classification:
438270, 438259, 438268, 438424, 438425, 438589, 257330, 257E29201
Abstract:
A process for fabricating a power semiconductor device is disclosed.

Trench Mosfet Technology For Dc-Dc Converter Applications

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US Patent:
7557395, Jul 7, 2009
Filed:
Jan 27, 2004
Appl. No.:
10/766465
Inventors:
Ling Ma - Los Angeles CA, US
Adam Amali - Hawthorne CA, US
Siddharth Kiyawat - El Segundo CA, US
Ashita Mirchandani - Torrance CA, US
Donald He - Redondo Beach CA, US
Naresh Thapar - Redondo Beach CA, US
Ritu Sodhi - Rendondo Beach CA, US
Kyle Spring - Temecula CA, US
Daniel Kinzer - El Segundo CA, US
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 29/76
US Classification:
257288, 257901, 257E29149, 438294
Abstract:
A trench power semiconductor device including a recessed termination structure.

Power Semiconductor Device With Interconnected Gate Trenches

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US Patent:
7943990, May 17, 2011
Filed:
Aug 14, 2006
Appl. No.:
11/504751
Inventors:
Ling Ma - Torrance CA, US
Adam I. Amali - Hawthorne CA, US
Russell Turner - South Wales, GB
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 29/66
US Classification:
257330, 257E29257
Abstract:
A power semiconductor device which includes a plurality of gate trenches and a perimeter trench intersecting the gate trenches.

Termination Trench Structure For Mosgated Device And Process For Its Manufacture

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US Patent:
8017494, Sep 13, 2011
Filed:
Jan 25, 2008
Appl. No.:
12/011290
Inventors:
Ling Ma - Torrance CA, US
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 21/76
US Classification:
438425, 438223, 438248, 438268, 438270, 438427, 257E21359
Abstract:
A process for the fabrication of a MOSgated device that includes a plurality of spaced trenches in the termination region thereof.

Flip Chip Semiconductor Device And Process Of Its Manufacture

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US Patent:
8154105, Apr 10, 2012
Filed:
Sep 20, 2006
Appl. No.:
11/524178
Inventors:
Ling Ma - Torrance CA, US
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 29/40
US Classification:
257621, 257698, 257E23011
Abstract:
A semiconductor die and method of making it are provided. The die includes a first via extending through the entire thickness of the die and a first via electrode disposed inside the via electrically connecting an electrode at a top surface of the die with another electrode disposed at a bottom surface of the die.

Trench Mosfet And Method For Fabricating Same

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US Patent:
8536645, Sep 17, 2013
Filed:
Feb 21, 2011
Appl. No.:
13/031505
Inventors:
Timothy D. Henson - Torrance CA, US
Ling Ma - Redondo Beach CA, US
Hugo Burke - Wales, GB
David P. Jones - South Glamorgan, GB
Martin Carroll - Cardiff, GB
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 29/78
H01L 21/336
US Classification:
257330, 257327, 257E2141, 257E29262, 438270
Abstract:
According to an exemplary embodiment, a trench field-effect transistor (trench FET) includes a trench formed in a semiconductor substrate, the trench including a gate dielectric disposed therein. A source region is disposed adjacent the trench. The trench FET also has a gate electrode including a lower portion disposed in the trench and a proud portion extending laterally over the source region. A silicide source contact can extend vertically along a sidewall of the source region. Also, a portion of the gate dielectric can extend laterally over the semiconductor substrate. The trench FET can further include a silicide gate contact formed over the proud portion of the gate electrode.

Power Semiconductor Device With Buried Source Electrode

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US Patent:
8564051, Oct 22, 2013
Filed:
Apr 4, 2005
Appl. No.:
11/098255
Inventors:
Ling Ma - Torrance CA, US
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 29/66
US Classification:
257330, 257341, 257E29257, 257E29118
Abstract:
A power semiconductor device that includes a buried source electrode disposed at the bottom of a trench below a respective gate electrode, and a source connector including a finger electrically connecting the buried source to the source contact of the device, and a process for fabricating the device.
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Ling Ling Ma from El Monte, CA, age ~73 Get Report