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Ling S Ma

from Arcadia, CA
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Related to:
Zhengkun Ma, 56Glen A Tooman, 57Yi Zhang, 30Linghai MaYiqun Ma, 56Ma Zheng Kun, 56Ken Z Ma, 56Kunhaeng Park, 65
Connected to:
Aileen F Ma, 33Alex Ma, 36Alexander C Ma, 76Aliza X Ma, 38Anila T Ma, 42Anny S Ma, 57Arick C Ma, 51Arleen C Ma, 49Bao P Ma, 73Barry K Ma, 69

Ling Ma Phones & Addresses

  • Arcadia, CA

Professional Records

Medicine Doctors

Ling Ma Photo 1

Ling Ma

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Specialties:
Hematology/Oncology
Work:
Rocky Mountain Cncr Centers @ MdtwnRocky Mountain Cancer Centers
11750 W 2 Pl STE 150, Denver, CO 80228
(303) 430-2700 (phone), (303) 930-5539 (fax)

Rocky Mountain Cancer Centers
11750 W 2 Pl Plz1 STE 100, Denver, CO 80228
(303) 430-2700 (phone), (303) 430-2770 (fax)
Education:
Medical School
Shandong Med Univ, Jinan, Shandong, China (242 46 Prior 1 1 71)
Graduated: 1994
Procedures:
Bone Marrow Biopsy
Chemotherapy
Conditions:
Hemolytic Anemia
Hodgkin's Lymphoma
Iron Deficiency Anemia
Malignant Neoplasm of Female Breast
Multiple Myeloma
Languages:
Arabic
Chinese
English
Spanish
Description:
Dr. Ma graduated from the Shandong Med Univ, Jinan, Shandong, China (242 46 Prior 1 1 71) in 1994. She works in Lakewood, CO and 1 other location and specializes in Hematology/Oncology. Dr. Ma is affiliated with Lutheran Medical Center and St Anthony Hospital.

Resumes

Resumes

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Ling Ma

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Work:
United States
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Ling Ma

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Work:
United States
Education:
New York University
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Ling Ma

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Ling Ma

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Location:
United States
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Ling Ma

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Location:
United States
Ling Ma Photo 7

Ling Ma Marietta, GA

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Work:
The Coca-Cola Company
Atlanta, GA
Aug 2009 to Jun 2013
Senior Scientist/Manager
The Coca-Cola Company
Atlanta, GA
2009 to 2013
Senior Scientist
Amylin Pharmaceuticals, Inc
San Diego, CA
2008 to 2009
Development Scientist
Calando Pharmaceuticals
Pasadena, CA
2005 to 2007
Senior Scientist
UCLA and Dr. H. Koster
HK, HK
2005 to 2005
Post-doctoral Researcher-Professor J. Loo
Santa Monica College
Santa Monica, CA
2005 to 2005
Instructor
Dept. of Chem. & Biochem

2002 to 2005
Post-doctoral Researcher-Professor M. F. Hawthorne
UCLA

2003 to 2003
Undergraduate Mentor
Brandeis University
Waltham, MA
1997 to 2000
Teaching Assistant
Lanzhou University
Lanzhou, CN
1995 to 1996
Teaching Assistant
Education:
Brandeis University
Waltham, MA
Ph.D. in Chemistry Department
Lanzhou University
Bachelor in Chemistry Department

Business Records

Name / Title
Company / Classification
Phones & Addresses
Ling Dong Ma
President
Musek, Inc
Beauty Shop
227 W Vly Blvd, San Gabriel, CA 91776
Ling Li Ma
President
DERMA PLUS SKIN CARE, INC
Misc Personal Services Beauty Shop
300 S Atlantic Blvd STE 106, Monterey Park, CA 91754
300 S Atl Blvd, Monterey Park, CA 91754
(626) 284-6268
Ling Hsiao Ma
President
CHARLEY MORGAN INC
2664 Stingle Ave #A, Rosemead, CA 91770
1736 E 23 St, Los Angeles, CA 90058
Ling Ling Ma
President
SATVISION TECHNOLOGY INT'L., INC
Advertising Representative
4021 Peck Rd, El Monte, CA 91732
(626) 579-7010
Ling Ling Ma
President
SATVISION TRAVEL, INC
9537 E Gidley St, Temple City, CA 91780
Ling Ma
President
MA LING FASHION DESIGN USA CORP
1216 S Garfield Ave #102, Alhambra, CA 91801

Publications

Us Patents

Split Electrode Gate Trench Power Device

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US Patent:
7423317, Sep 9, 2008
Filed:
Jul 24, 2006
Appl. No.:
11/491743
Inventors:
Hugo R. G. Burke - PontyClun, GB
David Paul Jones - South Glamorgan, GB
Ling Ma - Torrance CA, US
Robert Montgomery - South Glamorgan, GB
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 29/739
US Classification:
257331, 257330, 257329, 257332, 257E29131, 257E29201, 438270, 438271
Abstract:
A power semiconductor device which includes gate liners extending along gate insulation liners and an insulation block spacing the two gate liners.

Method For Fabricating A Semiconductor Device

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US Patent:
7524726, Apr 28, 2009
Filed:
Aug 15, 2006
Appl. No.:
11/504740
Inventors:
Ling Ma - Torrance CA, US
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 21/336
US Classification:
438270, 438259, 438268, 438424, 438425, 438589, 257330, 257E29201
Abstract:
A process for fabricating a power semiconductor device is disclosed.

Trench Mosfet Technology For Dc-Dc Converter Applications

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US Patent:
7557395, Jul 7, 2009
Filed:
Jan 27, 2004
Appl. No.:
10/766465
Inventors:
Ling Ma - Los Angeles CA, US
Adam Amali - Hawthorne CA, US
Siddharth Kiyawat - El Segundo CA, US
Ashita Mirchandani - Torrance CA, US
Donald He - Redondo Beach CA, US
Naresh Thapar - Redondo Beach CA, US
Ritu Sodhi - Rendondo Beach CA, US
Kyle Spring - Temecula CA, US
Daniel Kinzer - El Segundo CA, US
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 29/76
US Classification:
257288, 257901, 257E29149, 438294
Abstract:
A trench power semiconductor device including a recessed termination structure.

Power Semiconductor Device With Interconnected Gate Trenches

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US Patent:
7943990, May 17, 2011
Filed:
Aug 14, 2006
Appl. No.:
11/504751
Inventors:
Ling Ma - Torrance CA, US
Adam I. Amali - Hawthorne CA, US
Russell Turner - South Wales, GB
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 29/66
US Classification:
257330, 257E29257
Abstract:
A power semiconductor device which includes a plurality of gate trenches and a perimeter trench intersecting the gate trenches.

Termination Trench Structure For Mosgated Device And Process For Its Manufacture

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US Patent:
8017494, Sep 13, 2011
Filed:
Jan 25, 2008
Appl. No.:
12/011290
Inventors:
Ling Ma - Torrance CA, US
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 21/76
US Classification:
438425, 438223, 438248, 438268, 438270, 438427, 257E21359
Abstract:
A process for the fabrication of a MOSgated device that includes a plurality of spaced trenches in the termination region thereof.

Flip Chip Semiconductor Device And Process Of Its Manufacture

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US Patent:
8154105, Apr 10, 2012
Filed:
Sep 20, 2006
Appl. No.:
11/524178
Inventors:
Ling Ma - Torrance CA, US
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 29/40
US Classification:
257621, 257698, 257E23011
Abstract:
A semiconductor die and method of making it are provided. The die includes a first via extending through the entire thickness of the die and a first via electrode disposed inside the via electrically connecting an electrode at a top surface of the die with another electrode disposed at a bottom surface of the die.

Trench Mosfet And Method For Fabricating Same

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US Patent:
8536645, Sep 17, 2013
Filed:
Feb 21, 2011
Appl. No.:
13/031505
Inventors:
Timothy D. Henson - Torrance CA, US
Ling Ma - Redondo Beach CA, US
Hugo Burke - Wales, GB
David P. Jones - South Glamorgan, GB
Martin Carroll - Cardiff, GB
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 29/78
H01L 21/336
US Classification:
257330, 257327, 257E2141, 257E29262, 438270
Abstract:
According to an exemplary embodiment, a trench field-effect transistor (trench FET) includes a trench formed in a semiconductor substrate, the trench including a gate dielectric disposed therein. A source region is disposed adjacent the trench. The trench FET also has a gate electrode including a lower portion disposed in the trench and a proud portion extending laterally over the source region. A silicide source contact can extend vertically along a sidewall of the source region. Also, a portion of the gate dielectric can extend laterally over the semiconductor substrate. The trench FET can further include a silicide gate contact formed over the proud portion of the gate electrode.

Power Semiconductor Device With Buried Source Electrode

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US Patent:
8564051, Oct 22, 2013
Filed:
Apr 4, 2005
Appl. No.:
11/098255
Inventors:
Ling Ma - Torrance CA, US
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 29/66
US Classification:
257330, 257341, 257E29257, 257E29118
Abstract:
A power semiconductor device that includes a buried source electrode disposed at the bottom of a trench below a respective gate electrode, and a source connector including a finger electrically connecting the buried source to the source contact of the device, and a process for fabricating the device.
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Ling S Ma from Arcadia, CA Get Report