Li E Wu

6468136, Oct 22, 2002

Jun 30, 2000

09/606666

Robert T. Lum - Sunnyvale CA
David W. Groechel - Sunnyvale CA
Li Wu - Fremont CA
Chiu Chan - Foster City CA

Applied Materials, Inc. - Santa Clara CA

B24B 100

451 41, 451286, 438692

Tungsten CMP is conducted with improved alignment mark integrity and reduced edge residue by employing a retaining ring having a mechanical hardness greater than about 85 durometer and a relatively soft polishing pad. Embodiments of the present invention include conducting CMP employing a carrier comprising a retaining ring additionally having a wear rate during CMP of less than about 1 mil per hour and a polishing pad having a hardness less than about 60 durometer. Suitable retaining ring materials include ceramics, quartz, polymers and fiber reinforced polymers.

7048607, May 23, 2006

May 31, 2000

09/583512

Li Wu - Fremont CA, US
Sourabh Mishra - Campbell CA, US
Young J. Paik - Campbell CA, US
Satyasrayan Kumaraswamy - Sunnyvale CA, US
Robert Lum - Sunnyvale CA, US
Chiu Chan - Foster City CA, US
David Groechel - Sunnyvale CA, US

Applied Materials - Santa Clara CA

B24B 7/22
B24B 49/00

451 5, 451 57

Generally, a method and apparatus for processing a substrate. In one embodiment, the method provides a first relative motion between at least a first substrate and a polishing material. A second relative motion is provided between at least a second substrate and the polishing material. The changing in direction of the relative motion extends the interval between conditioning procedures used to return the polishing material to a state that produces uniform polishing results.

7522293, Apr 21, 2009

Mar 30, 2006

11/394591

Li Wu - Fremont CA, US
Elina Szeto - San Jose CA, US
Michael Kwon - San Jose CA, US

Tokyo Electron Limited - Tokyo

G01B 11/14

356625

One or more features of multiple patterned layers formed on a semiconductor are determined by obtaining a first measured diffraction signal measured from a first patterned layer before a second patterned layer is formed on top of the first patterned layer. One or more features of the first patterned layer are determined using the first measured diffraction signal. Values of one or more profile parameters of a hypothetical profile of the second patterned layer in combination with the first patterned layer are fixed. A second measured diffraction signal measured from the second patterned layer after the second patterned layer has been formed on top of the first patterned layer is obtained. One or more features of the second patterned layer are determined based on the second measured diffraction signal and the fixed values of the one or more profile parameters.

20190341276, Nov 7, 2019

May 1, 2019

16/400603

- Santa Clara CA, US
David W. GROECHEL - Los Altos Hills CA, US
Tuochuan HUANG - Saratoga CA, US
Han WANG - Palo Alto CA, US
Li WU - Fremont CA, US
Gang PENG - Fremont CA, US

H01L 21/67
B08B 3/12
B08B 3/02

Embodiments described herein relate to chamber component cleaning systems and methods for cleaning a chamber component. The chamber component cleaning system includes a spray station, at least a first cleaning station, a dry station, a component transfer mechanism, and one or more enclosures that enclose the spray station, at least the first cleaning station, the dry station, and the component transfer mechanism. The spray station has a holder to position a chamber component in a path of a flow of a cleaning spray and a movable nozzle to provide the flow of the cleaning spray at a first pressure in a path of portions of the chamber component. The first cleaning station has a push mechanism to force a cleaning fluid through features and/or holes of the chamber component and at least one movable transducer to provide ultrasonic energy to the portions of the chamber component.