Li Z Wu

7048607, May 23, 2006

May 31, 2000

09/583512

Li Wu - Fremont CA, US
Sourabh Mishra - Campbell CA, US
Young J. Paik - Campbell CA, US
Satyasrayan Kumaraswamy - Sunnyvale CA, US
Robert Lum - Sunnyvale CA, US
Chiu Chan - Foster City CA, US
David Groechel - Sunnyvale CA, US

Applied Materials - Santa Clara CA

B24B 7/22
B24B 49/00

451 5, 451 57

Generally, a method and apparatus for processing a substrate. In one embodiment, the method provides a first relative motion between at least a first substrate and a polishing material. A second relative motion is provided between at least a second substrate and the polishing material. The changing in direction of the relative motion extends the interval between conditioning procedures used to return the polishing material to a state that produces uniform polishing results.

7522293, Apr 21, 2009

Mar 30, 2006

11/394591

Li Wu - Fremont CA, US
Elina Szeto - San Jose CA, US
Michael Kwon - San Jose CA, US

Tokyo Electron Limited - Tokyo

G01B 11/14

356625

One or more features of multiple patterned layers formed on a semiconductor are determined by obtaining a first measured diffraction signal measured from a first patterned layer before a second patterned layer is formed on top of the first patterned layer. One or more features of the first patterned layer are determined using the first measured diffraction signal. Values of one or more profile parameters of a hypothetical profile of the second patterned layer in combination with the first patterned layer are fixed. A second measured diffraction signal measured from the second patterned layer after the second patterned layer has been formed on top of the first patterned layer is obtained. One or more features of the second patterned layer are determined based on the second measured diffraction signal and the fixed values of the one or more profile parameters.