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Li Z Miao

from San Francisco, CA
Age ~82
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Also known as:
Zhu D Li
Related to:
Eva Xue Miao, 49Qi Jia LiBen Li, 33Guo J Miao, 80Lee MiaoShao Q Miao, 58Zhudi LimiaoMei Tan Yanna, 61Li Miao Yuan, 47Li Miao YuanYuan L Miao
Connected to:
Anthony A Miao, 34April Miao, 57Chun L Miao, 49Chunlin Miao, 45Gong Miao, 32Harry H Miao, 61Hua F Miao, 56Jacky Miao, 44Jane C Miao, 69

Li Miao Phones & Addresses

  • San Francisco, CA
  • Daly City, CA

Resumes

Resumes

Li Miao Photo 1

Data Scientist Ii

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Location:
San Francisco, CA
Industry:
Research
Work:
Microsoft
Data Scientist Ii
Microsoft
Data Scientist
Anheuser-Busch Inbev Feb 2016 - Dec 2016
Data Science and Machine Learning Intern
Nankang Techonology Jun 2015 - Aug 2015
Data Analytics Intern
University of Colorado Denver Jun 2014 - Jan 2015
Research Assistant
Education:
University of Illinois at Urbana - Champaign 2015 - 2017
Masters, Statistics University of Colorado Denver 2011 - 2015
Bachelors, Mathematics, Economics
Skills:
R
Python
Data Analysis
Machine Learning
Data Mining
C++
Sql
Statistical Modeling
Matlab
Sas
Microsoft Office
Powerpoint
Research
Teamwork
Microsoft Excel
Event Planning
Time Management
Statistics
Hadoop
Apache Pig
Hive
Deep Learning
Data Visualization
Interests:
Social Services
Education
Languages:
English
Mandarin
Certifications:
Sas Certified Base Programmer For Sas 9
Introduction To R
Intro To Python For Data Science
Sas, License Bp040527V9
Datacamp, License 62E7Fe1B36Ea54055Fb231A973D9D0...
Datacamp, License Edcc758Bcc7352E99355E77100C6Ab...
License Bp040527V9
License 62E7Fe1B36Ea54055Fb231A973D9D0...
License Edcc758Bcc7352E99355E77100C6Ab...
Li Miao Photo 2

Li Miao

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Location:
San Francisco, CA
Industry:
Writing And Editing
Work:
College of San Mateo
Li Miao Photo 3

Li Miao

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Li Miao Photo 4

Li Miao

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Li Miao Photo 5

Li Miao

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Location:
United States

Publications

Us Patents

Self-Aligned Multi-Patterning For Advanced Critical Dimension Contacts

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US Patent:
8084310, Dec 27, 2011
Filed:
Oct 21, 2009
Appl. No.:
12/603371
Inventors:
Bencherki Mebarki - Santa Clara CA, US
Li Yan Miao - San Francisco CA, US
Christopher Dennis Bencher - San Jose CA, US
Jen Shu - Saratoga CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/00
US Classification:
438164, 438128, 438412, 438703, 257E21214, 257E21532, 257E21536
Abstract:
Embodiments of the present invention pertain to methods of forming patterned features on a substrate having a reduced pitch in two dimensions as compared to what is possible using standard photolithography processing techniques using a single high-resolution photomask. A spacer layer is formed over a two-dimensional square grid of cores with a thickness chosen to leave a dimple at the center of four cores on the corners of a square. The spacer layer is etched back to reveal the substrate at the centers of the square. Removing the core material results in double the pattern density of the lithographically defined grid of cores. The regions of exposed substrate may be filled again with core material and the process repeated to quadruple the pattern density.

Boron Nitride And Boron-Nitride Derived Materials Deposition Method

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US Patent:
8148269, Apr 3, 2012
Filed:
Mar 31, 2009
Appl. No.:
12/415759
Inventors:
Mihaela Balseanu - Sunnyvale CA, US
Christopher D. Bencher - San Jose CA, US
Yongmei Chen - San Jose CA, US
Li Yan Miao - San Francisco CA, US
Victor Nguyen - Novato CA, US
Isabelita Roflox - Union City CA, US
Li-Qun Xia - Cupertino CA, US
Derek R. Witty - Fremont CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/302
H01L 21/461
US Classification:
438706, 438707, 438708, 438709, 438710, 438714
Abstract:
A method and apparatus are provided to form spacer materials adjacent substrate structures. In one embodiment, a method is provided for processing a substrate including placing a substrate having a substrate structure adjacent a substrate surface in a deposition chamber, depositing a spacer layer on the substrate structure and substrate surface, and etching the spacer layer to expose the substrate structure and a portion of the substrate surface, wherein the spacer layer is disposed adjacent the substrate structure. The spacer layer may comprise a boron nitride material. The spacer layer may comprise a base spacer layer and a liner layer, and the spacer layer may be etched in a two-step etching process.

Amorphous Carbon Deposition Method For Improved Stack Defectivity

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US Patent:
8227352, Jul 24, 2012
Filed:
Apr 25, 2011
Appl. No.:
13/093679
Inventors:
Hang Yu - Woodland CA, US
Deenesh Padhi - Sunnyvale CA, US
Man-Ping Cai - Saratoga CA, US
Naomi Yoshida - Sunnyvale CA, US
Li Yan Miao - San Francisco CA, US
Siu F. Cheng - Los Angeles CA, US
Shahid Shaikh - Santa Clara CA, US
Sohyun Park - Fremont CA, US
Heung Lak Park - Santa Clara CA, US
Bok Hoen Kim - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/308
H01L 21/32
US Classification:
438703, 438761, 257E21258, 257E21231
Abstract:
Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.

Amorphous Carbon Deposition Method For Improved Stack Defectivity

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US Patent:
8349741, Jan 8, 2013
Filed:
Apr 25, 2012
Appl. No.:
13/455916
Inventors:
Hang Yu - Woodland CA, US
Deenesh Padhi - Sunnyvale CA, US
Man-Ping Cai - Saratoga CA, US
Naomi Yoshida - Sunnyvale CA, US
Li Yan Miao - San Francisco CA, US
Siu F. Cheng - Los Angeles CA, US
Shahid Shaikh - Santa Clara CA, US
Sohyun Park - Fremont CA, US
Heung Lak Park - Santa Clara CA, US
Bok Hoen Kim - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/308
H01L 21/32
US Classification:
438703, 438761, 257E21258, 257E21231
Abstract:
Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.

Frequency Doubling Using A Photo-Resist Template Mask

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US Patent:
8357618, Jan 22, 2013
Filed:
Oct 24, 2008
Appl. No.:
12/257953
Inventors:
Christopher Dennis Bencher - San Jose CA, US
Huixiong Dai - San Jose CA, US
Li Yan Miao - San Francisco CA, US
Hao Chen - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/31
US Classification:
438763, 438689, 438703, 257313, 257E2124
Abstract:
A method for doubling the frequency of a lithographic process using a photo-resist template mask is described. A device layer having a photo-resist layer formed thereon is first provided. The photo-resist layer is patterned to form a photo-resist template mask. A spacer-forming material layer is deposited over the photo-resist template mask. The spacer-forming material layer is etched to form a spacer mask and to expose the photo-resist template mask. The photo-resist template mask is then removed and an image of the spacer mask is finally transferred to the device layer.

Self Aligned Double Patterning Flow With Non-Sacrificial Features

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US Patent:
20100136784, Jun 3, 2010
Filed:
Dec 1, 2008
Appl. No.:
12/326068
Inventors:
Bencherki Mebarki - Santa Clara CA, US
Li Yan Miao - San Francisco CA, US
Kenlin C. Huang - Fremont CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/44
US Classification:
438669, 257E21249, 257E21295
Abstract:
Embodiments of the present invention pertain to methods of forming features on a substrate using a self-aligned double patterning (SADP) process. A conformal layer of non-sacrificial material is formed over features of sacrificial structural material patterned near the optical resolution of a photolithography system using a high-resolution photomask. An anisotropic etch of the non-sacrificial layer leaves non-sacrificial ribs above a substrate. A gapfill layer deposited thereon may be etched or polished back to form alternating fill and non-sacrificial features. No hard mask is needed to form the non-sacrificial ribs, reducing the number of processing steps involved.

Conformal Strippable Carbon Film For Line-Edge-Roughness Reduction For Advanced Patterning

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US Patent:
20160365248, Dec 15, 2016
Filed:
Apr 25, 2016
Appl. No.:
15/137486
Inventors:
- Santa Clara CA, US
Pramit MANNA - Sunnyvale CA, US
Li Yan MIAO - San Francisco CA, US
Deenesh PADHI - Sunnyvale CA, US
Bok Hoen KIM - San Jose CA, US
Christopher Dennis BENCHER - Cupertino CA, US
International Classification:
H01L 21/033
H01L 21/3105
H01L 21/311
H01L 21/027
H01L 21/02
Abstract:
Embodiments of the disclosure relate to deposition of a conformal organic material over a feature formed in a photoresist or a hardmask, to decrease the critical dimensions and line edge roughness. In various embodiments, an ultra-conformal carbon-based material is deposited over features formed in a high-resolution photoresist. The conformal organic layer formed over the photoresist thus reduces both the critical dimensions and the line edge roughness of the features.

Method For Critical Dimension Reduction Using Conformal Carbon Films

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US Patent:
20160049305, Feb 18, 2016
Filed:
Jul 14, 2015
Appl. No.:
14/799374
Inventors:
- Santa Clara CA, US
Bok Hoen KIM - San Jose CA, US
Deenesh PADHI - Sunnyvale CA, US
Li Yan MIAO - San Francisco CA, US
Pramit MANNA - Santa Clara CA, US
Christopher Dennis BENCHER - Cupertino CA, US
Mehul B. NAIK - San Jose CA, US
Huixiong DAI - San Jose CA, US
Christopher S. NGAI - Burlingame CA, US
Daniel Lee DIEHL - Chiba, JP
International Classification:
H01L 21/308
H01L 21/02
H01L 21/027
H01L 21/311
Abstract:
Embodiments of the disclosure generally provide a method of forming a reduced dimension pattern in a hardmask that is optically matched to an overlying photoresist layer. The method generally comprises of application of a dimension shrinking conformal carbon layer over the field region, sidewalls, and bottom portion of the patterned photoresist and the underlying hardmask at temperatures below the decomposition temperature of the photoresist. The methods and embodiments herein further involve removal of the conformal carbon layer from the bottom portion of the patterned photoresist and the hardmask by an etch process to expose the hardmask, etching the exposed hardmask substrate at the bottom portion, followed by the simultaneous removal of the conformal carbon layer, the photoresist, and other carbonaceous components. A hardmask with reduced dimension features for further pattern transfer is thus yielded.
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Li Z Miao from San Francisco, CA, age ~82 Get Report