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Kin L Yu

from Hayward, CA
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Also known as:
Kin Lam Yu
Related to:
Yu Lam Chat, 73Wing Lam, 45Chat S LamYu K Lam, 48So C Lam, 77Eugene Lam
Connected to:
Abigail M Yu, 43Adeline Y Yu, 40Ai Yu, 64Aimy Yu, 30Aiping A Yu, 71Alisa Yu, 34Allen Yu, 30Angelia W Yu, 74Angelita T Yu, 68Anna Yu, 56

Kin Yu Phones & Addresses

  • Hayward, CA

Resumes

Resumes

Kin Yu Photo 1

Kin Yu

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Kin Yu Photo 2

Kin Yu

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Kin Yu Photo 3

Staff Scientist At Lawrence Berkeley National Laboratory

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Location:
San Francisco Bay Area
Industry:
Research
Kin Yu Photo 4

Kin Yu San Francisco, CA

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Work:
BSR

Jun 2007 to 2000
Staff Accountant - BSR
International Investment - Babcock & Brown Corp
San Francisco, CA
May 2003 to Jun 2007
Staff Accountant
Qiva Inc
San Francisco, CA
Jun 1998 to Apr 2003
Staff Accountant
American Digicom Inc
Sunnyvale, CA
Jun 1993 to Jun 1998
General Ledger Accountant
Zoltrix Inc
Fremont, CA
Feb 1992 to May 1993
Senior Accountant
Access Computer Technologies
Santa Clara, CA
Aug 1990 to Jan 1992
Junior Accountant
Education:
Pacific Union College
Nov 1990
Bachelor in Business Administration

Business Records

Name / Title
Company / Classification
Phones & Addresses
Kin Yu
WEB SITE CAFE LIMITED
Kin Yu
Managing
Lightscape Technologies LLC
Light Control
48124 Leigh St, Fremont, CA 94539

Publications

Us Patents

Co-Implantation Of Group Vi Elements And N For Formation Of Non-Alloyed Ohmic Contacts For N-Type Semiconductors

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US Patent:
6759312, Jul 6, 2004
Filed:
Oct 16, 2002
Appl. No.:
10/272280
Inventors:
Wladyslaw Walukiewicz - Kensington CA
Kin M. Yu - Lafayette CA
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 21322
US Classification:
438473, 438167, 438520, 438407, 438515, 438 37, 438 46, 438379, 438606, 148171, 148175, 148187, 357 17, 357 63, 357 89, 357 90
Abstract:
Non-alloyed, low resistivity contacts for semiconductors using Group III-V and Group II-VI compounds and methods of making are disclosed. Co-implantation techniques are disclosed.

Broad Spectrum Solar Cell

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US Patent:
7217882, May 15, 2007
Filed:
May 27, 2003
Appl. No.:
10/445711
Inventors:
Wladyslaw Walukiewicz - Kensington CA, US
Kin Man Yu - Lafayette CA, US
Junqiao Wu - Richmond CA, US
William J. Schaff - Ithaca NY, US
Assignee:
Cornell Research Foundation, Inc. - Ithaca NY
The Regents of the University of California - Oakland CA
International Classification:
H01L 31/00
US Classification:
136252, 136262
Abstract:
An alloy having a large band gap range is used in a multijunction solar cell to enhance utilization of the solar energy spectrum. In one embodiment, the alloy is InGaN having an energy bandgap range of approximately 0. 7 eV to 3. 4 eV, providing a good match to the solar energy spectrum. Multiple junctions having different bandgaps are stacked to form a solar cell. Each junction may have different bandgaps (realized by varying the alloy composition), and therefore be responsive to different parts of the spectrum. The junctions are stacked in such a manner that some bands of light pass through upper junctions to lower junctions that are responsive to such bands.

Multiband Semiconductor Compositions For Photovoltaic Devices

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US Patent:
7709728, May 4, 2010
Filed:
Nov 29, 2004
Appl. No.:
10/999456
Inventors:
Wladyslaw Walukiewicz - Kensington CA, US
Kin Man Yu - Lafayette CA, US
Junqiao Wu - Belmont MA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 25/00
H01L 31/00
US Classification:
136243, 136252, 136258
Abstract:
The highly mismatched alloy ZnMnOTe, 0≦y

Single P-N Junction Tandem Photovoltaic Device

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US Patent:
8039740, Oct 18, 2011
Filed:
Jul 13, 2007
Appl. No.:
11/777963
Inventors:
Wladyslaw Walukiewicz - Kensington CA, US
Kin Man Yu - Lafayette CA, US
Assignee:
RoseStreet Labs Energy, Inc. - Phoenix AZ
International Classification:
H01L 31/042
US Classification:
136261, 136262
Abstract:
A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Single P-N Junction Tandem Photovoltaic Device

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US Patent:
8129614, Mar 6, 2012
Filed:
Oct 17, 2011
Appl. No.:
13/275079
Inventors:
Wladyslaw Walukiewicz - Kensington CA, US
Kin Man Yu - Lafayette CA, US
Assignee:
RoseStreet Labs Energy - Phoenix AZ
International Classification:
H01L 31/042
US Classification:
136261, 136262
Abstract:
A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Multiband Semiconductor Compositions For Photovoltaic Devices

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US Patent:
8129615, Mar 6, 2012
Filed:
Jan 18, 2008
Appl. No.:
12/009505
Inventors:
Wladyslaw Walukiewicz - Kensington CA, US
Kin Man Yu - Lafayette CA, US
Junqiao Wu - Belmont MA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 31/0264
US Classification:
136262, 136252, 257E31016, 257E31022, 257E31018, 438930, 438 93
Abstract:
The highly mismatched alloy ZnMnOTe, 0≦y

Dilute Group Iii-V Nitride Intermediate Band Solar Cells With Contact Blocking Layers

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US Patent:
8232470, Jul 31, 2012
Filed:
Sep 11, 2009
Appl. No.:
12/558446
Inventors:
Wladyslaw Walukiewicz - Kensington CA, US
Kin Man Yu - Lafayette CA, US
Assignee:
Rosestreet Labs Energy, Inc. - Phoenix AZ
International Classification:
H01L 31/00
US Classification:
136262, 136252
Abstract:
An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

Group Iii-Nitride Solar Cell With Graded Compositions

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US Patent:
20090173373, Jul 9, 2009
Filed:
Jan 2, 2009
Appl. No.:
12/348127
Inventors:
Wladyslaw Walukiewicz - Kensington CA, US
Kin Man Yu - Lafayette CA, US
International Classification:
H01L 31/042
H01L 31/00
US Classification:
136244, 136256
Abstract:
A compositionally graded Group III-nitride alloy is provided for use in a solar cell. In one or more embodiment, an alloy of either InGaN or InAlN formed in which the In composition is graded between two areas of the alloy. The compositionally graded Group III-nitride alloy can be utilized in a variety of types of solar cell configurations, including a single P-N junction solar cell having tandem solar cell characteristics, a multijunction tandem solar cell, a tandem solar cell having a low resistance tunnel junction and other solar cell configurations. The compositionally graded Group III-nitride alloy possesses direct band gaps having a very large tuning range, for example extending from about 0.7 to 3.4 eV for InGaN and from about 0.7 to 6.2 eV for InAlN.
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Kin L Yu from Hayward, CA Get Report