Kim Yun Lee

6503641, Jan 7, 2003

Dec 18, 2000

09/740089

Cyril Cabral, Jr. - Ossining NY
Roy Arthur Carruthers - Stormville NY
James McKell Edwin Harper - Yorktown Heights NY
Chao-Kun Hu - Somers NY
Kim Yang Lee - Fremont CA
Ismail Cevdet Noyan - Yorktown Heights NY
Robert Rosenberg - Cortlandt Manor NY
Thomas McCarroll Shaw - Peekskill NY

International Business Machines Corporation - Armonk NY

B32B 1501

428661, 1741262, 257751, 428636, 428651, 428662, 428663, 428664, 428665, 428674, 428929, 428935, 428936, 428938

An electrical conductor for use in an electronic structure is disclosed which includes a conductor body that is formed of an alloy including between about 0. 001 atomic % and about 2 atomic % of an element selected from the group consisting of Ti, Zr, In, Sn and Hf; and a liner abutting the conductor body which is formed of an alloy that includes Ta, W, Ti, Nb and V. The invention further discloses a liner for use in a semiconductor interconnect that is formed of a material selected from the group consisting of Ti, Hf, In, Sn, Zr and alloys thereof, TiCu , Ta Ti , Ta , Hf , Ta , In , Ta Sn , Ta Zr.

62517511, Jun 26, 2001

Apr 13, 1999

9/290778

Jack Oon Chu - Astoria NY
Khalid Ezzeldin Ismail - Yorktown Heights NY
Kim Yang Lee - Fremont CA
John Albrecht Ott - Greenwood Lake NY

International Business Machines Corporation - Armonk NY

H01L 2176

438439

A method for forming buried oxide regions below a single crystal semiconductor layer incorporating the steps of forming epitaxial layers having different rates of oxidation with the lower layer having a faster rate of oxidation and oxidizing the layers through an opening in a mask. A plurality of oxide isolated FET's may be formed. The invention reduces the problem of source/drain parasitic capacitance and short channel effects while isolating FET's and eliminating floating body effects of an FET by selectively oxidizing semiconductor layers.

50236717, Jun 11, 1991

Mar 27, 1989

7/328830

David P. DiVincenzo - Chappaqua NY
Kim Y. Lee - North Tarrytown NY
Theoren P. Smith - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

H01L 2712

357 4

Quantum mechanical effect devices incorporate means for interrupting the two-dimensional carrier gas of a modulation doped structure to produce periodic potential variations which provide superlattice-like effects on current flowing nearby. The modulation doped structures incorporate specialized structures displaced from a current path which simultaneously confine the two-dimensional carrier gas into a quasi-one-dimensional carrier gas and subject the thus confined carrier gas and current flowing therein to superlattice-like effects by inducing periodic potential variations along the current path. The induced variations are produced by etching corrugations in the device edges or by forming them in biasing gates.

59638176, Oct 5, 1999

Oct 16, 1997

8/951827

Jack Oon Chu - Astoria NY
Khalid Ezzeldin Ismail - Yorktown Heights NY
Kim Yang Lee - Fremont CA
John Albrecht Ott - Greenwood Lake NY

International Business Machines Corporation - Armonk NY

H01L 2176

438410

A method for forming buried oxide regions below a single crystal semiconductor layer incorporating the steps of forming epitaxial layers having different rates of oxidation with the lower layer having a faster rate of oxidation and oxidizing the layers through an opening in a mask. A plurality of oxide isolated FET's may be formed. The invention reduces the problem of source/drain parasitic capacitance and short channel effects while isolating FET's and eliminating floating body effects of an FET by selectively oxidizing semiconductor layers.