Ki Bin Kim

7491718, Feb 17, 2009

Oct 8, 2003

10/681784

Kenneth M. Comess - Winnetka IL, US
Scott A. Erickson - Zion IL, US
Jack Henkin - Highland Park IL, US
Douglas M. Kalvin - Buffalo Grove IL, US
Megumi Kawai - Libertyville IL, US
Ki H. Kim - Vista CA, US
Nwe Y. BaMaung - Niles IL, US
Chang Hoon Park - Libertyville IL, US
George S. Sheppard - Wilmette IL, US
Anil Vasudevan - Gurnee IL, US
Jieyi Wang - Lake Bluff IL, US
David M. Barnes - Lake Villa IL, US
Steve D. Fidanze - Grayslake IL, US
Lawrence Kolaczkowski - Gurnee IL, US
Robert A. Mantei - Franklin WI, US
David C. Park - Urbana IL, US
William J. Sanders - Fox Lake IL, US
Jason S. Tedrow - Evanston IL, US
Gary T. Wang - Libertyville IL, US

Abbott Laboratories - Abbott Park IL

A61K 31/435
A61K 31/535
A61K 31/4965
A61K 31/415
A61K 31/40
A61K 31/425
C07D 265/30
C07D 241/04
C07D 279/12
C07D 277/02
C07D 263/02
C07C 255/03
A61K 31/42

5142278

Compounds having methionine aminopeptidase-2 inhibitory (MetAP2) are described. Also described are pharmaceutical compositions comprising the compounds, methods of treatment using the compounds, methods of inhibiting angiogenesis, and methods of treating cancer.

20040068012, Apr 8, 2004

Oct 8, 2002

10/267081

Kenneth Comess - Winnetka IL, US
Scott Erickson - Zion IL, US
Jack Henkin - Highland Park IL, US
Douglas Kalvin - Buffalo Grove IL, US
Megumi Kawai - Libertyville IL, US
Ki Kim - Vista CA, US
Nwe BaMaung - Niles IL, US
Chang Park - Libertyville IL, US
George Sheppard - Wilmette IL, US
Anil Vasudevan - Gurnee IL, US
Jieyi Wang - Lake Bluff IL, US

A61K031/195

514/562000, 562/430000

Compounds having methionine aminopeptidase-2 inhibitory (MetAP2) are described. Also described are pharmaceutical compositions comprising the compounds, methods of treatment using the compounds, methods of inhibiting angiogenesis, and methods of treating cancer.

20040157836, Aug 12, 2004

Sep 23, 2003

10/667358

Kenneth Comess - Winnetka IL, US
Scott Erickson - Zion IL, US
Jack Henkin - Highland Park IL, US
Douglas Kalvin - Buffalo Grove IL, US
Megumi Kawai - Libertyville IL, US
Ki Kim - Vista CA, US
Nwe BaMaung - Niles IL, US
Chang Park - Libertyville IL, US
George Sheppard - Wilmette IL, US
Anil Vasudevan - Gurnee IL, US
Jieyi Wang - Lake Bluff IL, US
David Barnes - Lake Villa IL, US
Steve Fidanze - Grayslake IL, US
Lawrence Kolaczkowski - Gurnee IL, US
Robert Mantei - Franklin WI, US
David Park - Urbana IL, US
William Sanders - Fox Lake IL, US
Jason Tedrow - Evanston IL, US
Gary Wang - Libertyville IL, US

C07D279/12
C07D277/04
C07D211/92

514/227200, 514/237500, 514/255010, 514/317000, 514/370000, 514/377000, 514/423000, 514/562000, 544/059000, 544/159000, 544/387000, 546/223000, 548/194000, 548/233000, 548/531000, 562/430000

Compounds having methionine aminopeptidase-2 inhibitory (MetAP2) are described. Also described are pharmaceutical compositions comprising the compounds, methods of treatment using the compounds, methods of inhibiting angiogenesis, and methods of treating cancer.

52647110, Nov 23, 1993

Sep 15, 1992

7/945040

Mitra Dutta - Matawan NJ
Harold L. Grubin - West Hartford CT
Gerald J. Iafrate - Raleigh NC
Ki Wook Kim - Durham NC
Michael A. Stroscio - Durham NC

The United States of America as represented by the Secretary of the Army - Washington DC

H01L 2902

257 14

A polar semiconductor quantum wire for use in electronic and opto-electronic devices. The polar semiconductor quantum wire is either completely or partially encapsulated in metal to reduce the strength of the scattering potential associated with interface optical phonons normally established at the lateral boundaries of polar semiconductor quantum wires. Metal alone or metal employed in conjunction with modulation doping enhances the transport of charge carriers within the polar semiconductor quantum wire.

56617402, Aug 26, 1997

Apr 16, 1996

8/636995

Mitra Dutta - Tinton Falls NJ
Michael A. Stroscio - Durham NC
Yuri M. Sirenko - Raleigh NC
Ki Wook Kim - Durham NC

The United States of America as represented by the Secretary of the Army - Washington DC

H01S 319
H01L 2906

372 45

A semiconductor lasing device is formed by disposing a quantum well or quum wire array between positive and negative ohmic contacts such that different potentials are applied along the array to establish a transverse electromagnetic (TEM) mode of the optic signal (i. e. where the field components lie in a plane perpendicular to the direction of propagation). Thus, the light confinement l will be on the order of the electron confinement a. By applying different potentials via the positive and negative ohmic contacts to multiply connected waveguides, the established TEM mode does not have a cut-off frequency, and therefore, the gain of device can be greatly enhanced while still providing increased anisotropy and a low threshold current.

40395120, Aug 2, 1977

Sep 15, 1975

5/613145

Ki Soo Kim - Irvington NY
Siegfried Altscher - Monsey NY

Stauffer Chemical Company - Westport CT

C08G 3310
C08G 3318

260 61

Flame retardant polymers of benzene phosphorus oxydichloride, 4,4'-thiodiphenol and POCl. sub. 3 are disclosed which are preferably formed by reacting these monomers in an inert organic solvent at ambient temperature in the presence of an amine acid acceptor.

53748310, Dec 20, 1994

Apr 14, 1993

8/051105

Mitra Dutta - Matawan NJ
Gerald J. Iafrate - Raleigh NC
Ki W. Kim - Durham NC
Michael A. Stroscio - Durham NC

The United States of America as represented by the Secretary of the Army - Washington DC

H01L 29225

257 23

A phonon modulator which includes a semiconductor body having at least first and second polar semiconductor quantum wells formed therein separated by a polar semiconductor barrier. The conduction band energies of the wells and barrier are selected such that the lowest energy electronic states in the two wells are separated by an energy which is greater than the energies of optical phonons in the well and barrier materials. Respective voltages are applied to the wells which are less than the optical phonon emission threshold in the well and barrier materials to generate respective currents therein. Increasing the voltage to the first well to a level in excess of such optical phonon emission threshold causes optical phonons to be emitted from the first well to create a standing interface mode from the first well through the barrier to the second well, thereby providing a scattering mechanism for electrons in the second well and reducing the current thereof.

40425428, Aug 16, 1977

Sep 15, 1975

5/613143

Ki Soo Kim - Irvington NY

Stauffer Chemical Company - Westport CT

C08L 8900

260 6

The recovery of a polymer product formed by condensing an organo-phosphonic acid dichloride or dibromide, a dihydroxy aromatic compound and, optionally, a crosslinking momomer in an organic solvent reaction medium, as a granular solid is accomplished by combining said organic solvent containing the polymer product and an aqueous solution which contains an effective amount of suspending agent to later induce precipitation of said polymer product and by thereafter agitating the solution while removing the solvent therefrom to affect precipitation of said granular polymer product.