Kihong Kim Phones & Addresses
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Eastvale, CA
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Colton, CA
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6378 Daphne St, Corona, CA 92880 (310) 991-1785
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335 93Rd St, Brooklyn, NY 11209 (718) 680-9302
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1066 Grand Ave, Diamond Bar, CA 91765 (909) 396-8422
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West New York, NJ
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Edison, NJ
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Palisades Park, NJ
Business Records
Name / Title
Company / Classification
Phones & Addresses
President
Camel Corp
Business Services
Business Services
28 W 33 St, New York, NY 10001
(212) 290-1624
(212) 290-1624
Owner
Studio Hong Nj Inc
Apartment Building Operator
Apartment Building Operator
318 Broad Ave, Leonia, NJ 07605
President
ALL NATIONS EVANGELICAL CHURCH
Religious Organization
Religious Organization
386 S Burnside Ave APT 8E, Los Angeles, CA 90036
3407 W 6 St, Los Angeles, CA 90020
7208 Alo Verde Rd, Irvine, CA 92617
3407 W 6 St, Los Angeles, CA 90020
7208 Alo Verde Rd, Irvine, CA 92617
Principal
K H Kim
Business Services at Non-Commercial Site
Business Services at Non-Commercial Site
57 Balsam Ct, Paramus, NJ 07652
Unlimited Los Amaya L.P
1057 N Mt Vernon Ave, Colton, CA 92324
President
Doosan Infracore America Corporation
Whol Industrial Equipment Whol Construction/Mining Equipment
Whol Industrial Equipment Whol Construction/Mining Equipment
19A Chapin Rd, Pine Brook, NJ 07058
8 York Ave, West Caldwell, NJ 07006
(973) 618-2500, (973) 461-2390, (973) 618-2501
8 York Ave, West Caldwell, NJ 07006
(973) 618-2500, (973) 461-2390, (973) 618-2501
President
KIM'S INTERNATIONAL ENTERTAINMENT
372 E 2 Steet, Los Angeles, CA 90012
372 E 2 St, Los Angeles, CA 90012
372 E 2 St, Los Angeles, CA 90012
Publications
Us Patents
Light Pipe Etch Control For Cmos Fabrication
View pageUS Patent:
8324010, Dec 4, 2012
Filed:
Jun 29, 2010
Appl. No.:
12/826655
Inventors:
Kihong Kim - Irvine CA, US
Assignee:
Himax Imaging, Inc. - Grand Cayman
International Classification:
H01L 31/18
US Classification:
438 69, 438 48, 438 52, 438 72, 438E31127
Abstract:
In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to construct a semiconductor structure having an etch-stop layer above a photodiode region and a first dielectric layer above the etch-stop layer. The process may be configured to etch a LP funnel through the first dielectric layer. And the process may be further configured to stop the etching of the LP funnel upon reaching and removing of the etch-stop layer.
Light Pipe Etch Control For Cmos Fabrication
View pageUS Patent:
8519400, Aug 27, 2013
Filed:
Oct 29, 2012
Appl. No.:
13/662562
Inventors:
Kihong Kim - Irvine CA, US
Assignee:
Himax Imaging, Inc. - Grand Cayman
International Classification:
H01L 31/20
US Classification:
257 59, 257 40, 257642, 257E31127
Abstract:
In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to construct a semiconductor structure having an etch-stop layer above a photodiode region and a first dielectric layer above the etch-stop layer. The process may be configured to etch a LP funnel through the first dielectric layer. And the process may be further configured to stop the etching of the LP funnel upon reaching and removing of the etch-stop layer.
Light Pipe Fabrication With Improved Sensitivity
View pageUS Patent:
20120018831, Jan 26, 2012
Filed:
Jul 20, 2010
Appl. No.:
12/839608
Inventors:
Kihong KIM - Irvine CA, US
Desmond CHEUNG - Irvine CA, US
Yang WU - Irvine CA, US
Desmond CHEUNG - Irvine CA, US
Yang WU - Irvine CA, US
Assignee:
HIMAX IMAGING, INC. - Grand Cayman
International Classification:
H01L 31/0232
H01L 31/18
H01L 31/18
US Classification:
257432, 438 70, 257E31127
Abstract:
In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to etch a first portion of a LP funnel in a dielectric layer of a semiconductor structure using a web etching process, wherein the dielectric layer is above a photodiode region. The process may also be configured to etch a second portion of the LP funnel in the dielectric layer subsequent to the etching of the first portion of the LP funnel, wherein the second portion of the LP funnel is etched below the first portion of the LP funnel using a dry etching process.