Ken C Mui

7544556, Jun 9, 2009

Nov 12, 2004

10/986636

Ken Mui - Portland OR, US
Aaron Marmorstein - Atlanta GA, US
Eric Lee - Corvallis OR, US

Integrated Device Technology, Inc. - San Jose CA

H01L 21/8238

438199, 438230, 438585, 438305

A process for forming CMOS devices is disclosed in which disposable spacers are used to obtain a structure having improved gap-fill characteristics. First, gate film stacks are formed on the substrate. A shallow implant process is performed so as to form shallow source/drain implant regions. A layer of oxide and a layer of silicon nitride are deposited and etched to form a first set of spacers that extend on opposite sides of the gate film stacks. A second implant is performed so as to form intermediate source/drain implant regions. A set of disposable spacers are then formed that extend on opposite sides of each of the gate film stacks. A third implant process is performed so as to form deep source/drain implant regions. The disposable spacers are then removed, providing more space for the subsequently-formed contact to land.