Inventors:
Kam Leung Lee - New York NY
Ronnen Andrew Roy - Ossining NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2976
Abstract:
A complementary metal oxide semiconductor (CMOS) device having silicide contacts that are self-aligned to deep junction edges formed within a surface of a semiconductor substrate as well as a method of manufacturing the same are disclosed. Specifically, the CMOS device includes a plurality of patterned gate stack regions formed on a surface of a semiconductor substrate. Each plurality of patterned gate stack regions includes an L-shaped nitride spacer formed on exposed vertical sidewalls thereof, the L-shaped nitride spacer having a vertical element and a horizontal element, wherein the horizontal element is formed on a portion of the substrate that abuts each patterned gate stack region. Silicide contacts are located on other portions of the semiconductor substrate between adjacent patterned gate stack regions not containing the horizontal element of the L-shaped nitride spacer.
