Kai W Wu

6503737, Jan 7, 2003

Oct 1, 1999

09/410551

Christopher Reeves - Orinda CA
Daniel Chu - Santa Clara CA
Chaitan Khosla - Palo Alto CA
Daniel Santi - San Francisco CA
Kai Wu - Foster City CA

Kosan Biosciences, Inc. - Hayward CA

C12P 1962

435 76, 4353201, 4352523, 43525235, 536 231, 536 232

Host cells comprising recombinant vectors encoding the FK-520 polyketide synthase and FK-520 modification enzymes can be used to produce the FK-520 polyketide. Recombinant DNA constructs comprising one or more FK-520 polyketide synthase domains, modules, open reading frames, and variants thereof can be used to produce recombinant polyketide synthases and a variety of different polyketides with application as pharmaceutical and veterinary products.

6613516, Sep 2, 2003

Oct 11, 2000

09/689937

Fred C. Christians - Los Altos CA
Duc Do - San Jose CA
Thomas Gingeras - Encinitas CA
Kevin Gunderson - Encinitas CA
Charles G. Miyada - San Jose CA
Carsten Rosenow - Redwood City CA
Kai Wu - Mountain View CA
Qing Yang - San Jose CA

Affymetrix, Inc. - Santa Clara CA

C12Q 168

435 6, 435 71, 435 911, 435 912, 435 9132, 435194, 435196, 4352883, 436501, 536 231, 536 2433, 536 253

The presently claimed invention provides methods, compositions, and apparatus for studying nucleic acids. Specifically, the present invention provides a novel enrichment and labeling strategy for ribonucleic acids. In one embodiment, the invention provides enriching for a population of interest in a complex population by diminishing the presence of a target sequence. In a further embodiment, the invention can be used to reproducibly label and detect extremely small amounts of nucleic acids.

6660862, Dec 9, 2003

Apr 3, 2001

09/825621

Christopher Reeves - Orinda CA
Daniel Chu - Santa Clara CA
Chaitan Khosla - Palo Alto CA
Daniel Santi - San Francisco CA
Kai Wu - Foster City CA

Kosan Biosciences, Inc. - Hayward CA

C07D51500

546 92

Polyketide compounds of the formula but not including FK-506, FK-520, 18-hydroxy-FK520 and 18-hydroxy-FK-506.

6759536, Jul 6, 2004

Aug 27, 2001

09/940316

Christopher Reeves - Orinda CA
Daniel Chu - Santa Clara CA
Chaitan Khosla - Palo Alto CA
Daniel Santi - San Francisco CA
Kai Wu - Foster City CA

Kosan Biosciences, Inc. - Hayward CA

C07D22118

546 71

Host cells comprising recombinant vectors encoding the FK-520 polyketide synthase and FK-520 modification enzymes can be used to produce the FK-520 polyketide. Recombinant DNA constructs comprising one or more FK-520 polyketide synthase domains, modules, open reading frames, and variants thereof can be used to produce recombinant polyketide synthases and a variety of different polyketides with application as pharmaceutical and veterinary products.

RE39762, Aug 7, 2007

Dec 9, 2005

11/299244

Christopher Reeves - Orinda CA, US
Daniel Chu - Santa Clara CA, US
Chaitan Khosla - Palo Alto CA, US
Daniel Santi - San Francisco CA, US
Kai Wu - Foster City CA, US

Kosan Biosciences, Inc. - Hayward CA

C07D 515/00
C07D 498/00

546 92, 546 90

Polyketide compounds of the formula but not including FK-506, FK-520, 18-hydroxy-FK520 and 18-hydroxy-FK-506.

7714118, May 11, 2010

Jul 6, 2004

10/885305

Christopher Reeves - Orinda CA, US
Kai Wu - Foster City CA, US

Kosan Biosciences Incorporated - Hayward CA

C12P 19/62
C12P 17/18
C12P 19/00
C12P 19/32
C12N 15/31
C12N 15/52
C12N 15/60
C12N 15/79

536 232, 435 76, 435232, 4352523, 43525235, 4353201, 536 231, 536 237

Host cells comprising recombinant vectors encoding the FK-520 polyketide synthase and FK-520 modification enzymes can be used to produce the FK-520 polyketide. Recombinant DNA constructs comprising one or more FK-520 polyketide synthase domains, modules, open reading frames, and variants thereof can be used to produce recombinant polyketide synthases and a variety of different polyketides with application as pharmaceutical and veterinary products.

7732327, Jun 8, 2010

Sep 26, 2008

12/239046

Avgerinos V. Gelatos - Redwood City CA, US
Kai Wu - Palo Alto CA, US
Amit Khandelwal - Santa Clara CA, US
Ross Marshall - Sunnyvale CA, US
Emily Renuart - Santa Clara CA, US
Wing-Cheong Gilbert Lai - Santa Clara CA, US
Jing Lin - Mountain View CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/4763

438649, 438683, 427255392, 257E21165

Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In one embodiment, a method is provided which includes depositing a tungsten silicide layer on the substrate by exposing the substrate to a continuous flow of a silicon precursor while also exposing the substrate to intermittent pulses of a tungsten precursor. The method further provides that the substrate is exposed to the silicon and tungsten precursors which have a silicon/tungsten precursor flow rate ratio of greater than 1, for example, about 2, about 3, or greater. Subsequently, the method provides depositing a tungsten nitride layer on the tungsten suicide layer, depositing a tungsten nucleation layer on the tungsten nitride layer, and depositing a tungsten bulk layer on the tungsten nucleation layer.

7964505, Jun 21, 2011

May 15, 2008

12/121209

Amit Khandelwal - Cupertino CA, US
Madhu Moorthy - San Jose CA, US
Kai Wu - Palo Alto CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/44

438680, 438677, 257E21171, 257E21585

Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes, such as atomic layer deposition (ALD) to provide tungsten films having significantly improved surface uniformity and production level throughput. In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate within a process chamber, wherein the substrate contains an underlayer disposed thereon, exposing the substrate sequentially to a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the underlayer during an ALD process, wherein the reducing gas contains a hydrogen/hydride flow rate ratio of about 40:1, 100:1, 500:1, 800:1, 1,000:1, or greater, and depositing a tungsten bulk layer on the tungsten nucleation layer. The reducing gas contains a hydride compound, such as diborane, silane, or disilane.