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Kah Low Phones & Addresses

  • Delray Beach, FL
  • 1830 Middleton Ave, Los Altos Hills, CA 94024 (650) 961-8564
  • Los Altos, CA
  • New York, NY
  • 601 S Albany Ave APT 3, Tampa, FL 33606
  • 5933 Cape Coral Dr, Austin, TX 78746
  • Santa Clara, CA
  • Hillsboro Bch, FL
  • Mountain View, CA
  • 1830 Middleton Ave, Los Altos, CA 94024

Work

Position: Professional/Technical

Education

Degree: Graduate or professional degree

Public records

Vehicle Records

Kah Low

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Address:
1830 Middleton Ave, Los Altos, CA 94024
VIN:
JHLRE38797C060348
Make:
HONDA
Model:
CR-V
Year:
2007

Publications

Us Patents

Phase Shifting Mask Structure With Multilayer Optical Coating For Improved Transmission

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US Patent:
54728118, Dec 5, 1995
Filed:
Apr 29, 1994
Appl. No.:
8/236870
Inventors:
Prahalad K. Vasudev - Austin TX
Kah K. Low - Austin TX
Assignee:
Sematech, Inc. - Austin TX
Motorola Inc. - Schaumburg IL
International Classification:
G03F 900
US Classification:
430 5
Abstract:
A multi-layer PSM structure with multi-layer optical coating disposed between a quartz substrate and a surrounding medium, which typically is air. The multi-layer coating is comprised of a high index of refraction material overlying the quartz and a lower index of refraction material overlying the first. The multi-layer coating essentially functions as an anti-reflective coating to reduce scattering and reflection at the interface boundaries.

Phase Shifting Mask Structure With Absorbing/Attenuating Sidewalls For Improved Imaging

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US Patent:
54118247, May 2, 1995
Filed:
Jun 9, 1994
Appl. No.:
8/257424
Inventors:
Prahalad K. Vasudev - Austin TX
Kah K. Low - Austin TX
Assignee:
Sematech, Inc. - Austin TX
International Classification:
G03F 900
US Classification:
430 5
Abstract:
A phase shifting mask has phase shifters in which the sidewalls of the shifters are coated with a light absorbing or attenuating material. The light absorption at the sidewalls reduces the edges scattering and improves the resolution by obtaining similar transmission profiles from phase shifted and unshifted regions of the PSM.

Method Of Fabricating Phase Shifters With Absorbing/Attenuating Sidewalls Using An Additive Process

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US Patent:
54180953, May 23, 1995
Filed:
Sep 16, 1994
Appl. No.:
8/307548
Inventors:
Prahalad K. Vasudev - Austin TX
Kah K. Low - Austin TX
Assignee:
Sematech, Inc. - Austin TX
Motorola, Inc. - Schaumburg IL
International Classification:
G03F 900
US Classification:
430 5
Abstract:
A method of fabricating phase shifters with absorbing or attenuating sidewalls in order to inhibit or prevent light scattering at quartz-air interfaces. A quartz substrate is patterned and trenches are formed to provide "shifters". A metal film layer is formed along sidewalls of the trenches to provide the light absorbing characteristics. In one technique, the conformal metal layer is anisotropically etched while in another the metal layer is removed along with the photoresist by a lift-off technique.
Kah K Low from Delray Beach, FL, age ~63 Get Report