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Jong Hoon Shin

from San Jose, CA
Age ~53

Jong Shin Phones & Addresses

  • 242 Arbor Valley Dr, San Jose, CA 95119
  • 329 N 1St St #104, San Jose, CA 95110
  • Clifton, NJ
  • 970 Kiely Blvd, Santa Clara, CA 95051
  • Jersey City, NJ
  • Ames, IA
  • Madison, WI

Professional Records

Medicine Doctors

Jong Shin Photo 1

Dr. Jong Shin, Flushing NY - DC (Doctor of Chiropractic)

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Specialties:
Chiropractic
Address:
13226 Avery Ave Suite 1A, Flushing, NY 11355
(718) 888-7972 (Phone)
Languages:
English
Jong Shin Photo 2

Jong T. Shin

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Specialties:
Acupuncturist
Work:
Chung Institute Of Integrated Medicine
110 Marter Ave STE 507, Moorestown, NJ 08057
(856) 222-4766 (phone), (856) 222-1137 (fax)
Education:
Medical School
Philadelphia College of Osteopathic Medicine
Graduated: 2004
Procedures:
Acupuncture
Conditions:
Gastroesophageal Reflux Disease (GERD)
Intervertebral Disc Degeneration
Lyme Disease
Languages:
English
Korean
Spanish
Description:
Dr. Shin graduated from the Philadelphia College of Osteopathic Medicine in 2004. He works in Moorestown, NJ and specializes in Acupuncturist. Dr. Shin is affiliated with Cooper University Hospital.

Lawyers & Attorneys

Jong Shin Photo 3

Jong Eun Shin - Lawyer

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Address:
Mmaa Building
(237) 818-746x (Office)
Licenses:
New York - Due to reregister within 30 days of birthday 2003
Education:
George Washington University National Law Center

Resumes

Resumes

Jong Shin Photo 4

Financial Representative

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Industry:
Insurance
Work:
Aig Life Insurance
Financial Representative
Jong Shin Photo 5

Phd Candidate

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Location:
Ann Arbor, MI
Industry:
Consumer Electronics
Work:
Samsung Electronics
Senior Deep Learning Engineer at Samsung Semiconductor Inc

University of Michigan Sep 2018 - Dec 2018
Graduate Student Instructor

Ibm Jun 2017 - Sep 2017
Research Intern, Neuromorphic Computing Group, Ibm T J Watson Research Center

University of Michigan Jun 2017 - Sep 2017
Phd Candidate

Lg Electronics Jul 2011 - Jun 2014
Research Engineer In System Ic R and D Laboratory
Education:
University of Michigan 2014 - 2019
Doctorates, Doctor of Philosophy, Electrical Engineering
Seoul National University 2008 - 2010
Master of Science, Masters, Physics
Seoul National University 2002 - 2008
Bachelors, Bachelor of Science, Physics
Skills:
Solid State Physics
Machine Learning
Neuromorphic Computing
In Memory Computing
Matlab
Python
Device Characterization
Device Physics
Optical Spectroscopy
Tensorflow
Keras
Pytorch
Jong Shin Photo 6

Jong Shin

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Jong Shin Photo 7

Jong Shin

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Jong Shin Photo 8

Jong Shin

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Jong Shin Photo 9

Jong Shin

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Jong Shin Photo 10

Chief Executive Officer

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Work:

Chief Executive Officer
Jong Shin Photo 11

Jong Shin

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Business Records

Name / Title
Company / Classification
Phones & Addresses
Jong Shin
Manager
Surf City Squeeze
Fruit and Vegetable Markets
10123 N Wolfe Rd # K7, Cupertino, CA 95014
Website: surfcitysqueeze.com
Jong Shin
Professional Engineer
Lockheed Martin Corp
Aircraft
1111 Lockheed Martin Way, Sunnyvale, CA 94089
Jong S. Shin
Principal
DONNA NAIL SPA, INC
Beauty Shop · Nail Salons
70 S Moger Ave, Mount Kisco, NY 10549
(914) 666-8219
Jong Shin
Manager
Surf City Squeeze
Fruit & Vegetable Markets
10123 N Wolfe Rd #K7, Cupertino, CA 95014
(408) 725-2613
Jong Phil Shin
Director, President, Secretary, Treasurer
Janus Systems Inc
Business Services · Custom Computer Programing
1329 15 St, West Fort Lee, NJ 07024
120 Westervelt Pl, Cresskill, NJ 07626
Jong W. Shin
President
Cozy House Inc
Ret Gifts/Novelties
28 Washington St, Tenafly, NJ 07670
1461 Teresa Dr, West Fort Lee, NJ 07024
(201) 567-2508
Jong Shin
Owner
Ace Old Thrift Shop
Ret Used Merchandise
210 Anderson Ave, Fairview, NJ 07022
Jong S Shin
Principal
SIE SOFT CORP
Ret Used Merchandise Ret Computers/Software
251-11 Northern Blvd #4, Little Neck, NY 11362
25111 Northern Blvd, Flushing, NY 11362
Jong Shin
Manager
Surf City Squeeze
Fruit and Vegetable Markets
10123 N Wolfe Rd # K7, Cupertino, CA 95014
Website: surfcitysqueeze.com
Jong Shin
Professional Engineer
Lockheed Martin Corp
Aircraft
1111 Lockheed Martin Way, Sunnyvale, CA 94089

Publications

Us Patents

System And Method For Providing Prepaid Telecommunication Services

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US Patent:
6873690, Mar 29, 2005
Filed:
Sep 26, 2002
Appl. No.:
10/255795
Inventors:
Eric E. Moon - Fort Lee NJ, US
Johng Phil Lee - Palisades Park NJ, US
Jae Heung Park - Fort Lee NJ, US
Taesoon Kim - Fort Lee NJ, US
Jong Phil Shin - Palisades Park NJ, US
Han Kwang Cho - Hackensack NJ, US
Assignee:
Locus Telecommunications, Inc. - Englewood Cliffs NJ
International Classification:
H04M015/00
US Classification:
3791142, 37911415, 37911416, 37912701, 37912703
Abstract:
The present invention relates to a system and method for providing prepaid telecommunication services. More particularly, prepaid telephone calls can be made by users without entering any access code, if such calls are made from telephone numbers previously registered in the telecommunication system in connection with valid access codes. Prepaid telephone calls can also be made from non-registered telephone numbers after providing the telecommunication system with a valid access code.

System And Method For Providing Prepaid Telecommunication Services

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US Patent:
7295658, Nov 13, 2007
Filed:
Mar 17, 2005
Appl. No.:
11/082552
Inventors:
Eric E. Moon - Fort Lee NJ, US
Johng Phil Lee - Palisades Park NJ, US
Jae Heung Park - Fort Lee NJ, US
Taesoon Kim - Fort Lee NJ, US
Jong Phil Shin - Palisades Park NJ, US
Han Kwang Cho - Hackensack NJ, US
Assignee:
Locus Telecommunications, Inc. - Englewood Cliffs NJ
International Classification:
H04M 15/00
US Classification:
3791142, 37911415, 37911416, 37912701, 37912703
Abstract:
The present invention relates to a system and method for providing prepaid telecommunication services. More particularly, prepaid telephone calls can be made by users without entering any access code, if such calls are made from telephone numbers previously registered in the telecommunication system in connection with valid access codes. Prepaid telephone calls can also be made from non-registered telephone numbers after providing the telecommunication system with a valid access code.

System And Method For Providing Prepaid Telecommunication Services

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US Patent:
7539294, May 26, 2009
Filed:
Nov 9, 2007
Appl. No.:
11/937945
Inventors:
Eric E. Moon - Fort Lee NJ, US
Johng Phil Lee - Palisades Park NJ, US
Jae Heung Park - Fort Lee NJ, US
Taesoon Kim - Fort Lee NJ, US
Jong Phil Shin - Palisades Park NJ, US
Han Kwang Cho - Hackensack NJ, US
Assignee:
Locus Telecommunications, Inc. - Englewood Cliffs NJ
International Classification:
H04M 15/00
US Classification:
3791142, 37911415, 37911416, 37912701, 37912703
Abstract:
The present invention relates to a system and method for providing prepaid telecommunication services. More particularly, prepaid telephone calls can be made by users without entering any access code, if such calls are made from telephone numbers previously registered in the telecommunication system in connection with valid access codes. Prepaid telephone calls can also be made from non-registered telephone numbers after providing the telecommunication system with a valid access code.

Methods For High Temperature Etching A High-K Material Gate Structure

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US Patent:
8501626, Aug 6, 2013
Filed:
Jun 25, 2008
Appl. No.:
12/146303
Inventors:
Wei Liu - San Jose CA, US
Eiichi Matsusue - Yokohama, JP
Meihua Shen - Fremont CA, US
Shashank Deshmukh - San Jose CA, US
Anh-Kiet Quang Phan - San Jose CA, US
David Palagashvili - Mountain View CA, US
Michael D. Willwerth - Campbell CA, US
Jong I. Shin - Santa Clara CA, US
Barrett Finch - San Jose CA, US
Yohei Kawase - Chiba, JP
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/302
H01L 21/461
C03C 15/00
C03C 25/68
US Classification:
438696, 216 41, 216 46, 216 51, 216 72, 438700, 438710, 438958
Abstract:
Methods for etching high-k material at high temperatures are provided. In one embodiment, a method etching high-k material on a substrate may include providing a substrate having a high-k material layer disposed thereon into an etch chamber, forming a plasma from an etching gas mixture including at least a halogen containing gas into the etch chamber, maintaining a temperature of an interior surface of the etch chamber in excess of about 100 degree Celsius while etching the high-k material layer in the presence of the plasma, and maintaining a substrate temperature between about 100 degree Celsius and about 250 degrees Celsius while etching the high-k material layer in the presence of the plasma.

Speed Dialing In Calling Card Telephone Services

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US Patent:
20070121841, May 31, 2007
Filed:
Oct 20, 2006
Appl. No.:
11/551638
Inventors:
Jong Shin - Fort Lee NJ, US
International Classification:
H04M 15/00
US Classification:
379114200
Abstract:
Only one or two extra key presses are required to invoke such advanced telecommunications functions as speed dial number storage, speed dialing, ANI registration/de-registration, and account transfer/re-fill in a prepaid telephone account.

System And Method For Providing Prepaid Telecommunication Services

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US Patent:
20090202055, Aug 13, 2009
Filed:
Apr 21, 2009
Appl. No.:
12/427373
Inventors:
Eric E. Moon - Fort Lee NJ, US
Johng Phil Lee - Palisades Park NJ, US
Jae Heung Park - Fort Lee NJ, US
Taesoon Kim - Fort Lee NJ, US
Jong Phil Shin - Palisades Park NJ, US
Han Kwang Cho - Hackensack NJ, US
International Classification:
H04M 15/00
US Classification:
3791142
Abstract:
The present invention relates to a system and method for providing prepaid telecommunication services. More particularly, prepaid telephone calls can be made by users without entering any access code, if such calls are made from telephone numbers previously registered in the telecommunication system in connection with valid access codes. Prepaid telephone calls can also be made from non-registered telephone numbers after providing the telecommunication system with a valid access code.

Methods For High Temperature Etching A High-K Gate Structure

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US Patent:
20130344701, Dec 26, 2013
Filed:
Jun 28, 2013
Appl. No.:
13/929969
Inventors:
Wei LIU - San Jose CA, US
Eiichi MATSUSUE - Yokohama, JP
Meihua SHEN - Fremont CA, US
Shashank C. DESHMUKH - San Ramon CA, US
Anh-Kiet Quang PHAN - San Jose CA, US
David PALAGASHVILI - Mountain View CA, US
Michael D. WILLWERTH - Campbell CA, US
Jong I. SHIN - Milpitas CA, US
Barrett FINCH - San Jose CA, US
Yohei KAWASE - Chiba, JP
International Classification:
H01L 21/3065
US Classification:
438715
Abstract:
Methods for etching high-k material at high temperatures are provided. In one embodiment, a method etching high-k material on a substrate may include providing a substrate having a high-k material layer disposed thereon into an etch chamber, forming a plasma from an etching gas mixture including at least a halogen containing gas into the etch chamber, maintaining a temperature of an interior surface of the etch chamber in excess of about 100 degree Celsius while etching the high-k material layer in the presence of the plasma, and maintaining a substrate temperature between about 100 degree Celsius and about 250 degrees Celsius while etching the high-k material layer in the presence of the plasma.

Cmos-Mems Integrated Device Including Multiple Cavities At Different Controlled Pressures And Methods Of Manufacture

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US Patent:
20170183225, Jun 29, 2017
Filed:
Mar 16, 2017
Appl. No.:
15/461270
Inventors:
- San Jose CA, US
Jongwoo SHIN - Pleasanton CA, US
Jong Il SHIN - San Jose CA, US
Peter SMEYS - San Jose CA, US
Martin LIM - San Mateo CA, US
International Classification:
B81C 1/00
Abstract:
An integrated MEMS device comprises two substrates where the first and second substrates are coupled together and have two enclosures there between. One of the first and second substrates includes an outgassing source layer and an outgassing barrier layer to adjust pressure within the two enclosures. The method includes depositing and patterning an outgassing source layer and a first outgassing barrier layer on the substrate, resulting in two cross-sections. In one of the two cross-sections a top surface of the outgassing source layer is not covered by the outgassing barrier layer and in the other of the two cross-sections the outgassing source layer is encapsulated in the outgassing barrier layer. The method also includes depositing conformally a second outgassing barrier layer and etching the second outgassing barrier layer such that a spacer of the second outgassing barrier layer is left on sidewalls of the outgassing source layer
Jong Hoon Shin from San Jose, CA, age ~53 Get Report