Hoon J Kim

20130273649, Oct 17, 2013

Apr 12, 2013

13/861477

QiLong Ying - Arcadia CA, US
Hoon Kim - Los Angeles CA, US

University of Southern California - Los Angeles CA

C12N 5/0735

435349, 435377, 435354, 435353, 435352, 435366, 435325

The present invention provides culture media and methods of culturing pluripotent stem cells, such as epiblast stem cells (EpiSCs) and embryonic stem cells (ESCs), in order to culture, derive, and reprogram pluripotent stem cells, such as converting ESCs to EpiSCs.

20220209034, Jun 30, 2022

Mar 17, 2022

17/697574

Hoon KIM - La Habra CA, US

H01L 31/0352
H01L 27/146
H01L 31/103

A plasmonic field-enhanced photodetector is disclosed. The photodetector absorbs surface plasmon polaritons (SPPs) by using a light absorbing layer having a conduction band and a valence band in which an energy is split, the SPPs being generated by combining surface plasmons (SPs) with photons of a light wave, and generates photocurrent based on the absorbed SPPs.

20230088505, Mar 23, 2023

Nov 18, 2022

17/990325

Hoon KIM - La Habra CA, US

H01L 27/146
G02F 1/1333
G02F 1/13357
H01L 27/32
H01L 31/036
H01L 31/113
G06F 3/041
G06F 3/042
G06V 40/13

A touch screen panel using a thin film transistor (TFT) photodetector includes a touch panel including a plurality of unit patterns for sensing light reflected by a touch by using a TFT photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and a controller configured to scan the plurality of unit patterns and read touch coordinates as a result of the scanning.

20210335858, Oct 28, 2021

Jul 2, 2021

17/366165

Hoon KIM - La Habra CA, US

H01L 27/146
G06F 3/041
G06F 3/042
G06K 9/00
G02F 1/13357
H01L 27/32
G02F 1/1333
H01L 31/113
H01L 31/036
G02F 1/133

A touch screen panel using a thin film transistor (TFT) photodetector includes a touch panel including a plurality of unit patterns for sensing light reflected by a touch by using a TFT photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and a controller configured to scan the plurality of unit patterns and read touch coordinates as a result of the scanning.

20210055860, Feb 25, 2021

Mar 19, 2020

16/824071

Hoon KIM - La Habra CA, US

G06F 3/041
G06F 3/042

A touch screen panel using a thin film transistor (TFT) photodetector includes a touch panel including at least one unit pattern for sensing light reflected by a touch by using a TFT photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and a controller configured to scan the at least one unit pattern and read touch coordinates as a result of the scanning.

20210056279, Feb 25, 2021

Mar 19, 2020

16/823977

Hoon KIM - La Habra CA, US

G06K 9/00
H01L 27/32
G02F 1/1333
G02F 1/13357

A display panel includes a display pixel configured to irradiate light, an image sensor pixel included together with the display pixel in one unit pixel, including a thin film transistor (TFT) photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and configured to collect light reflected from a body located on the transparent material, and a processor configured to process biometrics along with positioning of the body according to the light reflected from the body.

20210057465, Feb 25, 2021

Dec 29, 2019

16/729445

Hoon KIM - La Habra CA, US

H01L 27/146

A unit pixel arranged along with a display pixel in each pixel of a display panel is provided. The unit pixel may include a thin-film transistor (TFT) photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent substrate, and at least one transistor electrically coupled to the TFT photodetector and configured to generate a voltage output from photocurrent generated from the active layer.

20210057599, Feb 25, 2021

Dec 29, 2019

16/729444

Hoon KIM - La Habra CA, US

H01L 31/113
H01L 27/146
H01L 31/036

A thin-film transistor (TFT) photodetector for a display panel is provided. The TFT photodetector includes an amorphous transparent substrate used as the display panel, a source formed of amorphous silicon or polycrystalline silicon on the transparent substrate, a drain formed of amorphous silicon or polycrystalline silicon, opposite to the source on the transparent substrate, an active layer formed between the source and the drain and having a current channel formed between the source and the drain, an insulating oxide film formed on the source, the drain, and the active layer, and a light receiving part formed on the insulating oxide film and configured to absorb light. When light is incident on the light receiving part, electrons migrate by tunneling through the insulating oxide film between the light receiving part and the active layer which have been excited with the insulating oxide film in between, the amount of charge in the light receiving part is changed by the migration of the electrons, a threshold voltage of the current channel is changed due to the change of the amount of charge, and photocurrent flows through the current channel due to the change of the threshold voltage.