Jin Chai Liu

20180068929, Mar 8, 2018

Nov 13, 2017

15/811198

- Armonk NY, US
Jin Liu - Chappaqua NY, US
Lei Zhuang - White Plains NY, US

H01L 23/48
H01L 21/768
H01L 21/308
H01L 21/033
H01L 21/74
H01L 21/311

A first photoresist layer is patterned with a first pattern that includes an opening in a region between areas of two adjacent via holes to be formed. The opening in the first photoresist is transferred into a template layer to form a line trench therein. The lateral dimension of the trench is reduced by depositing a contiguous spacer layer that does not fill the trench completely. An etch-resistant material layer is conformally deposited and fills the trench, and is subsequently recessed to form an etch-resistant material portion filling the trench. A second photoresist layer is applied and patterned with a second pattern, which includes an opening that includes areas of two via holes and an area therebetween. A composite pattern of an intersection of the second pattern and the complement of the pattern of the etch-resistant material portion is transferred through the template layer.

20160035650, Feb 4, 2016

Oct 15, 2015

14/884076

- Armonk NY, US
Jin Liu - Chappaqua NY, US
Lei Zhuang - White Plains NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 23/48

A first photoresist layer is patterned with a first pattern that includes an opening in a region between areas of two adjacent via holes to be formed. The opening in the first photoresist is transferred into a template layer to form a line trench therein. The lateral dimension of the trench is reduced by depositing a contiguous spacer layer that does not fill the trench completely. An etch-resistant material layer is conformally deposited and fills the trench, and is subsequently recessed to form an etch-resistant material portion filling the trench. A second photoresist layer is applied and patterned with a second pattern, which includes an opening that includes areas of two via holes and an area therebetween. A composite pattern of an intersection of the second pattern and the complement of the pattern of the etch-resistant material portion is transferred through the template layer.

20150041809, Feb 12, 2015

Oct 24, 2014

14/522626

- Armonk NY, US
Jin Liu - Chappaqua NY, US
Brian W. Messenger - Newburgh NY, US
Oliver D. Patterson - Poughkeepsie NY, US

H01L 21/66
H01L 49/02
H01L 21/762

257 48, 438 18

A method including forming a first test structure and a second test structure in electrical contact with an inner buried plate and an outer buried plate, respectively, where the first and second test structures each comprise a deep trench filled with a conductive material, and measuring the voltage of the inner buried plate and the outer buried plate immediately after the formation of a deep trench isolation structure, where the inner buried plate and the outer buried plate are positioned on opposite sides of the deep trench isolation structure.

20140145191, May 29, 2014

Nov 28, 2012

13/686954

- Armonk NY, US
Jin Liu - Chappaqua NY, US
Brian W. Messenger - Newburgh NY, US
Oliver D. Patterson - Poughkeepsie NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 21/66

257 48, 438 18, 438386

A method including forming a first test structure and a second test structure in electrical contact with an inner buried plate and an outer buried plate, respectively, where the first and second test structures each comprise a deep trench filled with a conductive material, and measuring the voltage of the inner buried plate and the outer buried plate immediately after the formation of a deep trench isolation structure, where the inner buried plate and the outer buried plate are positioned on opposite sides of the deep trench isolation structure.