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Jin Wang Phones & Addresses

  • South El Monte, CA
  • Fountain Valley, CA
  • Diamond Bar, CA
  • Las Vegas, NV
  • Covina, CA
  • San Francisco, CA
  • Monterey Park, CA

Professional Records

Medicine Doctors

Jin Wang Photo 1

Dr. Jin Chen C Wang, Chino CA - MD (Doctor of Medicine)

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Specialties:
Pediatrics
Clinical Cytogenetics
Clinical Genetics
Address:
Davita Healthcare Of Chino
4445 Riverside Dr, Chino, CA 91710
(909) 464-0347 (Phone)

1275 W C St, Colton, CA 92324
(909) 430-0930 (Phone)

536 E Foothill Blvd Suite B, Upland, CA 91786
(909) 981-5882 (Phone), (909) 946-0833 (Fax)

2475 N Garey Ave, Pomona, CA 91767
(909) 596-9997 (Phone)

655 E Huntington Dr, Monrovia, CA 91016
(626) 471-9922 (Phone)
Certifications:
Clinical Cytogenetics, 1987
Clinical Genetics, 1984
Pediatrics, 1979
Awards:
Healthgrades Honor Roll
Languages:
English
Education:
Medical School
National Taiwan University, College Of Medicine
Graduated: 1970
Medical School
Greater Baltimore Mc
Graduated: 1972
Medical School
North Shore University Hospital
Graduated: 1976
Medical School
Cornell University
Graduated: 1974
Medical School
Mass Genl Hospital
Graduated: 1983
Jin Wang Photo 2

Jin Wang, Pasadena CA - LAC

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Specialties:
Acupuncture
Address:
110 S Rosemead Blvd Suite Q6, Pasadena, CA 91107
Languages:
English
Jin Wang Photo 3

Dr. Jin Wang - MD (Doctor of Medicine)

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Hospitals:
536 E Foothill Blvd, Upland, CA 91786

Chino Valley Medical Center
5451 Walnut Avenue, Chino, CA 91710

St. Bernardine Medical Center
2101 North Waterman Avenue, San Bernardino, CA 92404
Education:
Medical Schools
Shanghai School Of Medicine
Graduated: 1982
Jin Wang Photo 4

Jin Wang, Upland CA

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Specialties:
Internal Medicine
Nephrology
General Practice
Obstetrics & Gynecology
Work:
Nephrology Assoc of Upland and Pomona
600 N 13Th Ave, Upland, CA 91786
Nephrology Assoc of Upland and Pomona
536 E Foothill Blvd, Upland, CA 91786
Nephrology Assoc of Upland and Pomona
4445 Riverside Dr, Chino, CA 91710
Nephrology Assoc of Upland and Pomona
2475 N Garey Ave, Pomona, CA 91767
Nephrology Assoc of Upland and Pomona
5050 Palo Verde St, Montclair, CA 91763
Nephrology Assoc of Upland and Pomona
17590 Foothill Blvd, Fontana, CA 92335
Education:
Shanghai First Medical College (1982)

Lawyers & Attorneys

Jin Wang Photo 5

Jin Wang - Lawyer

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Specialties:
Estate Planning
ISLN:
911730874
Admitted:
1989

Resumes

Resumes

Jin Wang Photo 6

Jin (Jim) Wang New York, NY

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Work:
Columbia University

May 2012 to 2000
Graduate Researcher - Laser Annealing Research

Columbia University
New York, NY
Sep 2011 to May 2012
Teaching Assistant

UCLA
Los Angeles, CA
Jan 2009 to Mar 2011
Undergraduate Researcher - X-ray research

Education:
Columbia University
New York, NY
2011 to 2016
PhD in Materials Science and Engineering

Columbia University
New York, NY
2011 to 2012
MS in Materials Science and Engineering

University of California, Los Angeles
Los Angeles, CA
2007 to 2011
BS in Materials Engineering - Electronic Materials

Skills:
Materials Science, Electron Microscopy, XRD, Experimental Design, Research, Semiconductors, Python, Matlab, Microscopy, Engineering, Materials Analysis, AFM, XRD, TEM, SEM, Laboratory, Cleanroom, Teaching, Tutoring, Microfabrication, Problem Solving
Jin Wang Photo 7

Jin Wang Costa Mesa, CA

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Work:
IRVINE CANAAN CHRISTIAN COMMUNITY CHURCH

Mar 2011 to Jul 2012
MATHEMATICS TUTOR

HARBIN NO.4 HIGH SCHOOL
HARBIN, CN
Jul 2004 to Nov 2007
MATHEMATICS TEACHER

HARBIN LONGMAN CULTURE SCHOOL
HARBIN, CN
Sep 2003 to Jul 2005
MATHEMATICS INSTRUCTOR

Education:
UNIVERSITY OF CALIFORNIA
Irvine, CA
Jun 2013
MS in Mathematics

HARBIN NORMAL UNIVERSITY
Jul 2004
BS in Mathematics and Applied Mathematics

Business Records

Name / Title
Company / Classification
Phones & Addresses
Jin Wang
Doctor Of Medicine
DVA Renal Healthcare Inc
Kidney Dialysis Centers
2475 N Garey Ave, Pomona, CA 91767
Jin Soo Wang
President
XGP INC
Nonclassifiable Establishments
2851 Bedford Ln #115, Chino Hills, CA 91709
3820 Del Amo Blvd, Torrance, CA 90503
2851 S Bedford St, Los Angeles, CA 90034
Jin Wang
Director
US Association of Cqu Abs Alumni
9400 Hollycrest Dr, Las Vegas, NV 89117
Jin Wang
Principal
Tasty Goody Chinese Food
Eating Place · Nonclassifiable Establishments
123 Baltimore Ave, Monterey Park, CA 91754
Jin Wang
Managing
Dialysis Center of Ontario LLC
Real Estate Investment · Kidney Dialysis Centers
536 E Foothill Blvd, Upland, CA 91786
Jin Wang
Medical Director
Dva Healthcare Renal Care, Inc
Kidney Dialysis Services
4445 Riverside Dr, Chino, CA 91710
(909) 464-0347
Jin Wang
Nephrology
Nephrology Associates of Upland & Pomona
Kidney Dialysis Centers Tax Return Preparation Services
536 E Foothill Blvd, Upland, CA 91786
536 E Foothl Bl, Upland, CA 91786
(909) 931-1512
Jin Wang
Doctor Of Medicine
DVA Renal Healthcare Inc
Kidney Dialysis Centers
2475 N Garey Ave, Pomona, CA 91767
(909) 596-9997
Jin Wang
Doctor Of Medicine
DVA Renal Healthcare Inc
Kidney Dialysis Centers
2475 N Garey Ave, Pomona, CA 91767

Publications

Us Patents

Split Syringe Device

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US Patent:
20110046562, Feb 24, 2011
Filed:
Aug 18, 2010
Appl. No.:
12/859221
Inventors:
JIN WANG - Claremont CA, US
International Classification:
A61M 5/31
US Classification:
604191
Abstract:
A split syringe includes two or more separate syringes held together to become one full cylindrically shaped syringe assembly. The needles of the separate syringes may be held together by a larger outside needle. For example, two half-cylindrically shaped syringes may be joined together to become one full cylindrically shaped syringe assembly.

Led Package Structure And Module Thereof

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US Patent:
20120286297, Nov 15, 2012
Filed:
May 9, 2011
Appl. No.:
13/103225
Inventors:
JIN SHEN WANG - TORRANCE CA, US
Assignee:
TAIWAN MICROPAQ CORPORATION - HSINCHU COUNTY
International Classification:
H01L 27/15
H01L 33/60
H01L 33/62
US Classification:
257 88, 257 99, 257 98, 257E2712, 257E33072, 257E33066
Abstract:
The present invention discloses a LED package structure and a module thereof. The LED package structure comprises a metallic chip-carrying lead frame, a metallic anode lead frame, a metallic cathode lead frame and a forming resin. At least one LED chip is stuck to the metallic chip-carrying lead frame. The metallic anode lead frame and metallic cathode lead frame are arranged beside the metallic chip-carrying lead frame. The forming resin includes a top member, a first sidewall, and a second sidewall. The top member is arranged on the metallic chip-carrying lead frame and has an opening to reveal the LED chip. A reflective wall is formed along the opening. The first sidewall is arranged between the metallic chip-carrying lead frame and the metallic anode lead frame to join them. The second sidewall is arranged between the metallic chip-carrying lead frame and the metallic cathode lead frame to join them.

Progressive-Refractivity Antireflection Layer And Method For Fabricating The Same

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US Patent:
20130069091, Mar 21, 2013
Filed:
Sep 20, 2011
Appl. No.:
13/236939
Inventors:
JIN SHIAN WANG - TORRANCE CA, US
International Classification:
H01L 33/58
B32B 37/16
C23C 16/50
B32B 37/12
G02B 1/11
C23C 16/40
US Classification:
257 98, 438 27, 359586, 359585, 427569, 156 60, 257E3306
Abstract:
The present invention discloses a progressive-refractivity antireflection layer and a method for fabricating the same to eliminate light reflection occurring in an interface. The present invention is characterized in being fabricated via depositing a first material and a second material, and having a refractivity (n) gradually varying with a thickness thereof and ranging between a refractivity (n) of the first material and a refractivity (n) of the second material. No matter at what thickness the refractivity (n) of the antireflection layer is measured, the refractivity (n) meets an effective medium theory expressed by an equation: n={nf+n(1−f)}, wherein f is a filling ratio of the first material of the antireflection layer.

Progressive-Refractivity Antireflection Layer And Method For Fabricating The Same

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US Patent:
20130171753, Jul 4, 2013
Filed:
Feb 22, 2013
Appl. No.:
13/774269
Inventors:
TAIWAN MICROPAQ CORPORATION - HSINCHU COUNTY, TW
JIN SHIAN WANG - TORRANCE CA, US
Assignee:
TAIWAN MICROPAQ CORPORATION - HSINCHU COUNTY
International Classification:
H01L 21/02
H01L 33/58
US Classification:
438 27, 20419211
Abstract:
The present invention discloses a progressive-refractivity antireflection layer and a method for fabricating the same to eliminate light reflection occurring in an interface. The present invention is characterized in being fabricated via depositing a first material and a second material, and having a refractivity (n) gradually varying with a thickness thereof and ranging between a refractivity (n) of the first material and a refractivity (n) of the second material. No matter at what thickness the refractivity (n) of the antireflection layer is measured, the refractivity (n) meets an effective medium theory expressed by an equation: n={nf+n(1−f)}, wherein f is a filling ratio of the first material of the antireflection layer.

Compact Disk Display And Storage Package

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US Patent:
55470777, Aug 20, 1996
Filed:
Feb 10, 1995
Appl. No.:
8/386750
Inventors:
Jin S. Wang - Torrance CA
Assignee:
JMR Research Inc. - Torrance CA
International Classification:
B65D 8557
US Classification:
2063071
Abstract:
A package for the storage and display of products such as video game cartridges and compact disks. The package consists of an elongated strip of transparent flexible plastic or similar material having a series of pockets or pouches attached to the the strip. The package may be hung from a hole at one end of the strip to display the contents of each of the pockets, the pockets all opening upwards towards the end of the strip from which the package is hung. The strip includes hinging portions between the pockets so that the cartridges or disks in the pockets can be folded together, in a zig-zag or accordion fashion to form a compact stack. When folded into a stack, a flap at one end of the strip may be folded over one side of the stack and fastened to the other end of the strip so as to hold the cartridges or disks in place in the stack, but at the same time allowing the side of the stack opposite to the flap to be opened so that the cartridges or disks can be examined one at a time, in a manner similar to opening a book, one page at a time.

Method Of Making A Piezoelectric Shear Wave Resonator

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US Patent:
46407561, Feb 3, 1987
Filed:
May 20, 1985
Appl. No.:
6/736164
Inventors:
Jin S. Wang - Harbor City CA
Kenneth M. Lakin - Ames IA
Allen R. Landin - Ames IA
Assignee:
The United States of America as represented by the United States
Department of Energy - Washington DC
International Classification:
C23C 1438
US Classification:
20419218
Abstract:
An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppm/. degree. C.

Computer

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US Patent:
D3336573, Mar 2, 1993
Filed:
Dec 14, 1990
Appl. No.:
7/628729
Inventors:
Jin S. Wang - Carson CA
Assignee:
Towercom, Inc. - Carson CA
US Classification:
D14100

Piezoelectric Shear Wave Resonator And Method Of Making Same

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US Patent:
47193832, Jan 12, 1988
Filed:
Sep 30, 1986
Appl. No.:
6/913192
Inventors:
Jin S. Wang - Harbor City CA
Kenneth M. Lakin - Ames IA
Allen R. Landin - Ames IA
Assignee:
The United States of America as represented by the United States
Department of Energy - Washington DC
International Classification:
H01L 4108
US Classification:
310324
Abstract:
An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppm/. degree. C.
Jin H Wang from South El Monte, CA, age ~60 Get Report