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Jin Song

from Corona, CA
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Related to:
Yongfa Li, 62Huan Xiao JiangLe P Quach, 57Hong Jiang, 65
Connected to:
Aeja Song, 56Aijun J Song, 50Alice J Song, 67Alisha M Song, 34Angelina E Song, 32Anita Song, 37Arthur Song, 29Benjamin Song, 76Boram Song, 43Brett H Song, 74

Jin Song Phones & Addresses

  • Corona, CA
  • 827 Pointe Vista Cir, Corona, CA 92881

Education

Degree: High school graduate or higher

Professional Records

License Records

Jin Wha Song

License #:
PIC.021531 - Active
Issued Date:
Apr 19, 2016
Expiration Date:
Dec 31, 2017
Type:
Pharmacist-in-Charge (V)

Jin Wha Song

License #:
PST.021531 - Active
Issued Date:
Apr 19, 2016
Expiration Date:
Dec 31, 2017
Type:
Pharmacist

Jin Wha Song Pharmd

License #:
15134 - Active
Category:
Pharmacy
Issued Date:
Nov 20, 2015
Effective Date:
Nov 20, 2015
Expiration Date:
Jan 1, 2018
Type:
Pharmacist

Medicine Doctors

Jin Song Photo 1

Jin H. Song

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Specialties:
Cardiovascular Disease
Work:
Olean Medical Group
535 Main St STE 1, Olean, NY 14760
(716) 372-0141 (phone), (716) 376-2329 (fax)
Education:
Medical School
Ewha Women's Univ, Coll of Med, Seoul, So Korea
Graduated: 2003
Procedures:
Cardioversion
Echocardiogram
Languages:
English
Description:
Dr. Song graduated from the Ewha Women's Univ, Coll of Med, Seoul, So Korea in 2003. She works in Olean, NY and specializes in Cardiovascular Disease. Dr. Song is affiliated with Olean General Hospital.

Business Records

Name / Title
Company / Classification
Phones & Addresses
Jin Hwa Song
President
R2 Apparel, Inc
9465 Gdn Grv Blvd, Garden Grove, CA 92844
19 Bancroft St, San Juan Capistrano, CA 92694
Jin Song
Owner
Daddy Bobs Spirite Shoppe
Ret Alcoholic Beverages
545 W Whittier Blvd, La Habra, CA 90631
(562) 697-4475
Jin Joo Song
President
ZN TECHNOLOGY, INC
910 Columbia St, Brea, CA 92821
Jin Ho Song
President
AUMT INSTITUTE
Career & Workplace Education · Emergency Medical Training · Training Programs & Services
20300 S Vermont Ave STE 105, Torrance, CA 90502
4120 Jurupa St, Ontario, CA 91761
(310) 532-5133
Jin Joo Song
President
XEPIX CORPORATION
Noncommercial Research Organization
910 Columbia St, Brea, CA 92821
(714) 989-8800
Jin S. Song
President
SEJA, INC
Nonclassifiable Establishments
20653 Lycoming #A-8, Walnut, CA 91789
709 Brea Cyn Rd, Walnut, CA 91789
(909) 468-0183
Jin Song
Principal
Tabento
Eating Place
1525 Mesa Verde Dr E, Costa Mesa, CA 92626
(714) 545-0600
Jin Song
ANACS, LLC

Publications

Us Patents

Innovative Growth Method To Achieve High Quality Iii-Nitride Layers For Wide Band Gap Optoelectronic And Electronic Devices

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US Patent:
20060160345, Jul 20, 2006
Filed:
Jan 14, 2005
Appl. No.:
11/036081
Inventors:
Xing-Quan Liu - Brea CA, US
Huoping Xin - Brea CA, US
Jin Song - Brea CA, US
Thomas Choo - Brea CA, US
International Classification:
H01L 29/22
H01L 21/28
H01L 31/0296
US Classification:
438604000, 257078000
Abstract:
A method to achieve high quality III-nitride epitaxial layers including AlN, AlGaN, GaN, InGaN, and AlInGaN, by supplying group III precursors constantly and group V precursors periodically with the epitaxial growth systems including metal organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), and molecular beam epitaxy (MBE).

High Efficiency Light Emitting Device

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US Patent:
20070029541, Feb 8, 2007
Filed:
Aug 4, 2005
Appl. No.:
11/196856
Inventors:
Huoping Xin - Brea CA, US
Xingquan Liu - Brea CA, US
Xiaohong Shi - Brea CA, US
Chan Choi - Brea CA, US
Jin Song - Brea CA, US
International Classification:
H01L 31/109
US Classification:
257014000
Abstract:
A highly efficient III-nitride/II-Oxide light emitting device that has a n-tunneling layer, which comprises at least one material selected from a group consisting of n-GaN, n-InGaN, n-AlGaN, n-AlGaInN, n-ZnO, n-ZnCdO, n-ZnMgO, n-ZnMgCdO, that is deposited on top of the p-layer in a LED structure. After that, a top n-layer is deposited above that n-tunneling layer that may be a n-layer and comprises at least one material selected from a group consisting of n-GaN, n-InGaN, n-AlGaN, n-AlGaInN, n-ZnO, n-ZnCdO, n-ZnMgO, n-ZnMgCdO or a top n-layer may also be a n-layer and comprises at least one material selected from a group consisting of n-GaN, n-InGaN, n-AlGaN, n-AlGaInN, n-ZnO, n-ZnCdO, n-ZnMgO, n-ZnMgCdO so that the top n-layer is made highly conductive and show very rough surface.

Group Iv Element Doped P-Type Zn(Mg,Cd,Be)O(S,Se) Semiconductor

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US Patent:
20120119203, May 17, 2012
Filed:
Nov 11, 2010
Appl. No.:
12/944227
Inventors:
Jizhi Zhang - Walnut CA, US
Jin Joo Song - Brea CA, US
International Classification:
H01L 29/22
H01B 1/10
US Classification:
257 43, 2525194, 257E29094
Abstract:
A p-type group II-VI semiconductor may include a group IV element as a dopant. The group II-IV semiconductor may be ZnMgCdBeOSSe, wherein a=01, b=01, c=01, p=01 and q=01.

Vertically Structured Led By Integrating Nitride Semiconductors With Zn(Mg,Cd,Be)O(S,Se) And Method For Making Same

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US Patent:
20150008461, Jan 8, 2015
Filed:
Feb 3, 2014
Appl. No.:
14/171696
Inventors:
- Brea CA, US
Jin Joo Song - Brea CA, US
Assignee:
ZN Technology, Inc. - Brea CA
International Classification:
H01L 33/00
H01L 33/50
H01L 33/46
US Classification:
257 94
Abstract:
A light emitting diode (LED) with a vertical structure, including electrical contacts on opposing sides, provides increased brightness. In some embodiments an LED includes a nitride semiconductor light emitting component grown on a sapphire substrate, a Zn(Mg,Cd,Be)O(S,Se) assembly formed on the nitride semiconductor component, and a further Zn(Mg,Cd,Be)O(S,Se) assembly bonded on an opposing side of the light emitting component, which is exposed by removing the sapphire substrate. Electrical contacts may be connected to the Zn(Mg,Cd,Be)O(S,Se) assembly and the further Zn(Mg,Cd,Be)O(S,Se) assembly. Herein Zn(Mg,Cd,Be)O(S,Se) is a II-VI semiconductor satisfying a formula ZnMgCdBeOSSe, wherein a=01, b=01, c=01, p=01, and q=01.
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Jin Song from Corona, CA Get Report