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Jin Qiu Phones & Addresses

  • Sunnyvale, CA
  • Palo Alto, CA
  • Santa Clara, CA
  • Riverside, CA
  • Brooklyn, NY

Work

Address: 141 E 55Th St, New York, NY 10022 Specialities: Family Physician

Education

School / High School: Peking University, Health Science Center - Doctor of Medicine

Professional Records

Medicine Doctors

Jin Qiu Photo 1

Jin Jin Qiu

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Specialties:
Family Medicine
Education:
Beijing School Of Medicine (1987)
Jin Qiu Photo 2

Jin Qiu, New York NY

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Specialties:
Family Physician
Address:
141 E 55Th St, New York, NY 10022
Education:
Peking University, Health Science Center - Doctor of Medicine

Resumes

Resumes

Jin Qiu Photo 3

Senior Mems Design Engineer

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Location:
San Francisco, CA
Industry:
Semiconductors
Work:
Spatial Photonics Nov 2007 - Jan 2009
Member of Technical Staff

Invensense, Inc. Nov 2007 - Jan 2009
Senior Mems Design Engineer

Wispry Sep 2005 - Nov 2007
Staff Process Engineer

Te Connectivity Jul 2003 - Sep 2005
Product Development Engineer

Massachusetts Institute of Technology (Mit) Aug 1997 - Jun 2003
Graduate Researcher
Education:
Massachusetts Institute of Technology 1999 - 2003
Doctorates, Doctor of Philosophy, Mechanical Engineering
Massachusetts Institute of Technology 1997 - 1999
Master of Science, Masters
Nanjing University 1993 - 1997
Bachelors, Bachelor of Science, Electrical Engineering
Skills:
Mems
Sensors
Testing
Semiconductors
Matlab
Failure Analysis
Characterization
Finite Element Analysis
Electrical Engineering
Simulations
Design of Experiments
Thin Films
Jin Qiu Photo 4

Jin Qiu

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Business Records

Name / Title
Company / Classification
Phones & Addresses
Jin Qiu
Owner
Jin Healing for Women
Misc Personal Services
999 Powell St, San Francisco, CA 94108
Jin Qiu
Family Practitioner, Medical Doctor
Ann Qiu Acupuncture Herbology
Health Practitioner's Office
141 E 55 St, New York, NY 10022
Jin Qiu
Owner, Family Medicine , Family Practitioner
Jin Qiu MD
Medical Doctor's Office
141 E 55 St, New York, NY 10022
(212) 758-8851
Jin Qiu
A Happy for Women LLC
Investment Business · Nonclassifiable Establishments
999 Powell St, San Francisco, CA 94108
Jin Y Qiu
YHMC LLC
Jin Yan Qiu
SHINGPHINE INC
1242 Dekalb Ave, Brooklyn, NY 11221

Publications

Isbn (Books And Publications)

The Culture of Power: The Lin Biao Incident in the Cultural Revolution

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Author

Jin Qiu

ISBN #

0804735298

Us Patents

Low Capacitance Two-Terminal Barrier Controlled Tvs Diodes

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US Patent:
7244970, Jul 17, 2007
Filed:
Dec 22, 2004
Appl. No.:
11/020507
Inventors:
Adrian I. Cogan - Redwood City CA, US
Jin Qiu - San Francisco CA, US
Richard A. Blanchard - Los Altos CA, US
Assignee:
Tyco Electronics Corporation - Middletown PA
International Classification:
H01L 29/72
US Classification:
257173, 257355
Abstract:
A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the predetermined clamping voltage applied between the anode electrode and the cathode electrode, and may be arranged such that the anode region provides conductivity modulation by injecting minority carriers into the channel region during conduction of the semiconductor structure. In presently preferred form the majority carriers are electrons and the minority carriers are holes. Fabrication methods are described.

Low Capacitance Two-Terminal Barrier Controlled Tvs Diodes

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US Patent:
7544544, Jun 9, 2009
Filed:
Jul 17, 2007
Appl. No.:
11/879424
Inventors:
Adrian I. Cogan - Redwood City CA, US
Jin Qiu - Lake Forest CA, US
Richard A. Blanchard - Los Altos CA, US
Assignee:
Tyco Electronics Corporation - Middletown PA
International Classification:
H01L 21/332
US Classification:
438133
Abstract:
A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the predetermined clamping voltage applied between the anode electrode and the cathode electrode, and may be arranged such that the anode region provides conductivity modulation by injecting minority carriers into the channel region during conduction of the semiconductor structure. In presently preferred form the majority carriers are electrons and the minority carriers are holes. Fabrication methods are described.

Method And Structures For Fabricating Mems Devices On Compliant Layers

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US Patent:
8367451, Feb 5, 2013
Filed:
Jul 23, 2008
Appl. No.:
12/178563
Inventors:
Jin Qiu - Sunnyvale CA, US
Assignee:
Wispry, Inc. - Irvine CA
International Classification:
H01L 21/00
US Classification:
438 53, 438619, 257E21495
Abstract:
Methods and structures for fabricating MEMS devices on compliant layers are provided. In particular, disclosed are methods and structures that can include the use of a sacrificial layer composed of a material having material properties relative to one or more other layers. These methods and structures can reduce final device shape sensitivity to process parameters, deposition temperature differences, specific material, time, and/or geometry. Further, such methods and structures can improve the final as-built shape of released devices, reduce variability in the as-built shape, eliminate decoupling of the deposited layers from the substrate, and reduce variability across a product array, die, or wafer.

Anchor-Tilt Cancelling Accelerometer

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US Patent:
20120125104, May 24, 2012
Filed:
Sep 30, 2011
Appl. No.:
13/249902
Inventors:
Jin Qiu - Sunnyvale CA, US
Joe Seeger - Menlo Park CA, US
Alexander Castro - San Francisco CA, US
Igor Tchertkov - Pleasanton CA, US
Richard Li - Mountain View CA, US
Assignee:
InvenSense, Inc. - Sunnyvale CA
International Classification:
G01P 15/125
G01P 15/00
US Classification:
7351432, 7351416
Abstract:
Described herein is an accelerometer that can be sensitive to acceleration, but not anchor motion due to sources other than acceleration. The accelerometer can employ a set of electrodes and/or transducers that can register motion of the proof mass and support structure and employ and output-cancelling mechanism so that the accelerometer can distinguish between acceleration and anchor motion due to sources other than acceleration. For example, the effects of anchor motion can be cancelled from an output signal of the accelerometer so that the accelerometer exhibits sensitivity to only acceleration.

Magnetometer Using Magnetic Materials On Accelerometer

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US Patent:
20140266170, Sep 18, 2014
Filed:
Mar 13, 2014
Appl. No.:
14/208222
Inventors:
- San Jose CA, US
Jin Qiu - Sunnyvale CA, US
Matthew Julian Thompson - Beaverton OR, US
Assignee:
Invensense, Inc. - San Jose CA
International Classification:
G01R 33/02
B81B 7/02
G01P 15/02
US Classification:
324227, 73509
Abstract:
A MEMS device including a first proof mass, a first magnetized magnetic material disposed partially on a surface of the first proof mass, a first spring anchored to a substrate to support the first proof mass, and a first sensing element coupled to the first proof mass and operable to sense the motion of the first proof mass caused by an ambient acceleration. The MEMS device further includes a second sensing element coupled to the first proof mass and operable to sense the motion of the first proof mass caused by an ambient magnetic field
Jin Qiu from Sunnyvale, CA, age ~41 Get Report