Jin B Liu

20190236497, Aug 1, 2019

Jan 22, 2019

16/253454

- Eindhoven, NL
Jin Liu - Malden MA, US
Eran Simhon - Boston MA, US

G06Q 10/04
G06Q 10/06
G06N 7/00
G16H 15/00
G16H 10/60

A method for KPI forecasting, comprising: (i) receiving an identification of one or more KPI to be forecast and a forecast horizon; (ii) extracting data received from a database for KPI forecasting; (iii) aggregating the extracted data; (iv) optionally removing one or more outliers from the aggregated data by identifying one or more possible outliers, presenting the outliers to a user, receiving information from the user comprising an identification of outliers, and removing the outliers; (v) fitting training data to a plurality of forecasting models; (vi) identifying a best fit forecasting model using test data; (vii) forecasting, using the best fit model, to generate KPI forecast data; (viii) evaluating the KPI forecast data for accuracy; and (ix) presenting the generated KPI forecast data to the user via a user interface.

20180068929, Mar 8, 2018

Nov 13, 2017

15/811198

- Armonk NY, US
Jin Liu - Chappaqua NY, US
Lei Zhuang - White Plains NY, US

H01L 23/48
H01L 21/768
H01L 21/308
H01L 21/033
H01L 21/74
H01L 21/311

A first photoresist layer is patterned with a first pattern that includes an opening in a region between areas of two adjacent via holes to be formed. The opening in the first photoresist is transferred into a template layer to form a line trench therein. The lateral dimension of the trench is reduced by depositing a contiguous spacer layer that does not fill the trench completely. An etch-resistant material layer is conformally deposited and fills the trench, and is subsequently recessed to form an etch-resistant material portion filling the trench. A second photoresist layer is applied and patterned with a second pattern, which includes an opening that includes areas of two via holes and an area therebetween. A composite pattern of an intersection of the second pattern and the complement of the pattern of the etch-resistant material portion is transferred through the template layer.

20160035650, Feb 4, 2016

Oct 15, 2015

14/884076

- Armonk NY, US
Jin Liu - Chappaqua NY, US
Lei Zhuang - White Plains NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 23/48

A first photoresist layer is patterned with a first pattern that includes an opening in a region between areas of two adjacent via holes to be formed. The opening in the first photoresist is transferred into a template layer to form a line trench therein. The lateral dimension of the trench is reduced by depositing a contiguous spacer layer that does not fill the trench completely. An etch-resistant material layer is conformally deposited and fills the trench, and is subsequently recessed to form an etch-resistant material portion filling the trench. A second photoresist layer is applied and patterned with a second pattern, which includes an opening that includes areas of two via holes and an area therebetween. A composite pattern of an intersection of the second pattern and the complement of the pattern of the etch-resistant material portion is transferred through the template layer.

20150041809, Feb 12, 2015

Oct 24, 2014

14/522626

- Armonk NY, US
Jin Liu - Chappaqua NY, US
Brian W. Messenger - Newburgh NY, US
Oliver D. Patterson - Poughkeepsie NY, US

H01L 21/66
H01L 49/02
H01L 21/762

257 48, 438 18

A method including forming a first test structure and a second test structure in electrical contact with an inner buried plate and an outer buried plate, respectively, where the first and second test structures each comprise a deep trench filled with a conductive material, and measuring the voltage of the inner buried plate and the outer buried plate immediately after the formation of a deep trench isolation structure, where the inner buried plate and the outer buried plate are positioned on opposite sides of the deep trench isolation structure.

20140145191, May 29, 2014

Nov 28, 2012

13/686954

- Armonk NY, US
Jin Liu - Chappaqua NY, US
Brian W. Messenger - Newburgh NY, US
Oliver D. Patterson - Poughkeepsie NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 21/66

257 48, 438 18, 438386

A method including forming a first test structure and a second test structure in electrical contact with an inner buried plate and an outer buried plate, respectively, where the first and second test structures each comprise a deep trench filled with a conductive material, and measuring the voltage of the inner buried plate and the outer buried plate immediately after the formation of a deep trench isolation structure, where the inner buried plate and the outer buried plate are positioned on opposite sides of the deep trench isolation structure.