Jie Z Zhang

6436703, Aug 20, 2002

Sep 22, 2000

09/668680

Y. Tom Tang - San Jose CA
Chenghua Liu - San Jose CA
Ping Zhou - San Jose CA
Vinod Asundi - Foster City CA
Jie Zhang - Campbell CA
Aidong J. Xue - Sunnyvale CA
Chongjun Xu - San Jose CA
Radoje T. Drmanac - Palo Alto CA

Hyseq, Inc. - Sunnyvale CA

C12N 1512

435325, 536 231, 536 235, 4353201

The present invention provides novel nucleic acids, novel polypeptide sequences encoded by these nucleic acids and uses thereof.

6541300, Apr 1, 2003

Jan 28, 2002

10/058704

Abhijit R. Chowdhuri - Oak Park IL
Jie Zhang - Buffalo Grove IL
Daniel R. Gamota - Palatine IL

Motorola, Inc. - Schaumburg IL

H01L 5140

438 99, 257 40

The present invention is directed to semiconductor films and a process for their preparation. In accordance with the process of the present invention, semiconductor organic material is blended with a multi-component solvent blend and the blend is deposited on a receiving material to provide a continuous highly ordered film having greater periodicity than films produced with a single solvent/semiconducting material blend under similar processing conditions.

6661024, Dec 9, 2003

Jul 2, 2002

10/187737

Jie Zhang - Buffalo Grove IL
Paul Brazis - South Elgin IL
Daniel Gamota - Palatine IL
Krishna Kalyanasundaram - Chicago IL
Steven Scheifers - Hoffman Estates IL
Jerzy Wielgus - Park Ridge IL
Abhijit Roy Chowdhuri - Oak Park IL

Motorola, Inc. - Schaumburg IL

H01L 3524

257 40, 257347, 438 99

An integrated circuit ( ) that includes a field effect transistor ( ) is fabricated by forming an organic semiconductor channel ( ) on one substrate ( ), forming device electrodes ( ) on one or more other substrates ( ), and subsequently laminating the substrates together. In one embodiment, a dielectric patch ( ) that functions as a gate dielectric is formed on one of the substrates ( ) prior to performing the lamination. Lamination provides a low cost route to device assembly, allows for separate fabrication of different device structures on different substrates, and thins various device layers resulting in improved performance.

6677607, Jan 13, 2004

Jan 25, 2002

10/057367

Steven M. Scheifers - Hoffman Estates IL
Daniel R. Gamota - Palatine IL
Jie Zhang - Buffalo Grove IL
Lawrence E. Lach - Chicago IL

Motorola, Inc. - Schaumburg IL

H01L 3524

257 40, 257288, 438149, 438151

A semiconductor device having a flexible or rigid substrate ( ) having a gate electrode ( ), a source electrode ( and ), and a drain electrode ( and ) formed thereon and organic semiconductor material ( and ) disposed at least partially thereover. The gate electrode ( ) has a thin dielectric layer formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

6743619, Jun 1, 2004

Jan 30, 2001

09/774528

Y. Tom Tang - San Jose CA
Ping Zhou - Cupertino CA
Ryle Goodrich - San Jose CA
Chenghua Liu - San Jose CA
Vinod Asundi - Foster City CA
Feiyan Ren - Cupertino CA
Jie Zhang - Campbell CA
Qing A. Zhao - San Jose CA
Yonghong Yang - San Jose CA
Aidong J. Xue - Sunnyvale CA
Tom Wehrman - Stanford CA
Dunrui Wang - Poway CA
Radoje T. Drmanac - Palo Alto CA

Nuvelo - Sunnyvale CA

C12N 990

435233, 435234, 536 232

The present invention provides novel nucleic acids, novel polypeptide sequences encoded by these nucleic acids and uses thereof.

6806542, Oct 19, 2004

Jun 30, 2003

10/609999

Jie Zhang - Buffalo Grove IL
Anindya Dasgupta - Hillsboro OR
Daniel Gamota - Palatine IL

Motorola, Inc. - Schaumburg IL

H01L 2976

257411, 257410, 257532

A solid state electronic device consists of a bottom electrode ( ) and a top electrode ( ) with a dielectric layer ( ) sandwiched in between. In one example, the dielectric layer is aluminum oxide. Microscopic voids or pinholes ( ) in the aluminum oxide layer are filled with an electrically nonconductive material ( ) to prevent current leakage between the two electrodes, and the addition of the electrically nonconductive material increases the performance of the device. The electrically nonconductive material can be p-nitroaniline, polyvinyl phenol, epoxy, polyurethane, polyacrylate, polyvinyl alcohol, titanium dioxide, barium titanate, oxides of aluminum, and oxides of silicon.

6868352, Mar 15, 2005

Apr 22, 2003

10/420616

Hakeem Adewole - Schaumburg IL, US
Paul Brazis - South Elgin IL, US
Daniel Gamota - Palatine IL, US
Jie Zhang - Buffalo Grove IL, US

Motorola, Inc. - Schaumburg IL

G06F019/00

702 81, 702 82

An organic semiconductor product state monitor attached to a product receives a product usefulness input, which, along with the product predetermined usefulness limit, is used to determine an indicator command to indicate a state of usefulness of the product. An organic circuit is formed and placed on a product with a power supply to control the circuit operation.

6870181, Mar 22, 2005

Jul 2, 2002

10/187516

Jie Zhang - Buffalo Grove IL, US
Paul Brazis - South Elgin IL, US
Daniel Gamota - Palatine IL, US
Krishna Kalyanasundaram - Chicago IL, US
Steven Scheifers - Hoffman Estates IL, US
Jerzy Wielgus - Park Ridge IL, US
Abhijit Roy Chowdhuri - Oak Park IL, US

Motorola, Inc. - Schaumburg IL

H01L035/24

257 40, 257324, 257411

An organic field effect transistor utilizes a bifunctional contact-enhancing agent at various interfaces to improve carrier mobility through the organic semiconductor layer, to improve carrier injection, and to enhance adhesion via a bifunctional mechanism. The contact-enhancing agent can be situated between the gate electrode () and the dielectric layer () to form a chemical or physical bond between the gate electrode and the dielectric layer. It can also be situated between the dielectric layer and the organic semiconducting layer (), or between the source and drain electrodes () and the organic semiconducting layer.