US Patent:
20130020653, Jan 24, 2013
Inventors:
Jiang Yan - New York NY, US
International Classification:
H01L 29/06
H01L 27/092
H01L 21/302
US Classification:
257369, 438424, 257506, 257E21214, 257E2902, 257E27062
Abstract:
The present invention relates to a shallow trench isolation structure, manufacturing method thereof and a device based on the structure. The present invention provides a method for manufacturing a shallow trench isolation (STI) structure, characterized in comprising the following steps: providing a semiconductor substrate; forming an insulating medium on said semiconductor substrate; etching a part of the insulating medium by using a mask to expose the semiconductor substrate thereunder, the unetched insulating medium forming STI regions; and epitaxially growing a semiconductor layer on said semiconductor substrate between said STI regions as an active region. With the method provided by the present invention, the problem of filling a small-size trench is solved and the problem of STI step height is overcome.