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Jian Chao Yu

from Flushing, NY
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Also known as:
Jian Qiang Yu, Jian C Yu, Jack Yu, Jlan C Yu, Jean Yu
Related to:
Yuping Jiang, 54George D Mootz, 100Eric J Mootz, 61Anne C Yu, 72Cindy S Yu, 57Aimin YuKyung Ok Lee, 66Louise M Wuchter, 88Augustine Lee, 67Cindy S Chi, 57Jung A Lee, 49Yuting GaoAi Yu, 74Pok MootzTom Mootz NAlicia M Mootz, 32Yi S Lee
Connected to:
Abigail M Yu, 43Adeline Y Yu, 40Ai Yu, 64Aimy Yu, 30Aiping A Yu, 71Alisa Yu, 34Allen Yu, 30Angelia W Yu, 74Angelita T Yu, 68Anna Yu, 56

Jian Yu Phones & Addresses

  • Flushing, NY
  • 3025 S Quinn St, Chicago, IL 60608
  • Tacoma, WA
  • Des Moines, IA
  • Redding, CA
  • San Gabriel, CA

Professional Records

Medicine Doctors

Jian Yu Photo 1

Jian C. Yu

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Specialties:
Colon & Rectal Surgery, Gastroenterology
Work:
Jian C Yu MD
227 Mt Pleasant Rd STE 1, Hauppauge, NY 11788
(631) 360-0005 (phone), (631) 368-1113 (fax)
Education:
Medical School
China Med Coll, Taichung, Taiwan (385 05 Prior 1/71)
Graduated: 1969
Procedures:
Colonoscopy
Destruction of Lesions on the Anus
Hemorrhoid Procedures
Laparoscopic Gallbladder Removal
Proctosigmoidoscopy
Small Bowel Resection
Conditions:
Benign Polyps of the Colon
Anal Fissure
Anal or Rectal Abscess
Gastrointestinal Hemorrhage
Hemorrhoids
Languages:
English
Description:
Dr. Yu graduated from the China Med Coll, Taichung, Taiwan (385 05 Prior 1/71) in 1969. He works in Hauppauge, NY and specializes in Colon & Rectal Surgery and Gastroenterology. Dr. Yu is affiliated with North Shore University Hospital and Saint Catherine Of Siena Medical Center.
Jian Yu Photo 2

Jian Qin M. Yu

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Specialties:
Diagnostic Radiology, Nuclear Medicine
Work:
Fox Chase Cancer Center
333 Cottman Ave, Philadelphia, PA 19111
(215) 728-6900 (phone), (215) 728-2773 (fax)
Education:
Medical School
Beijing Med Univ, Beijing City, Beijing, China
Graduated: 1987
Languages:
English
Description:
Dr. Yu graduated from the Beijing Med Univ, Beijing City, Beijing, China in 1987. He works in Philadelphia, PA and specializes in Diagnostic Radiology and Nuclear Medicine. Dr. Yu is affiliated with Fox Chase Cancer Center and Temple University Hospital.

License Records

Jian Qin Yu

License #:
MT048329T - Expired
Category:
Medicine
Type:
Graduate Medical Trainee

Lawyers & Attorneys

Jian Yu Photo 3

Jian Yu - Lawyer

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Address:
Xiamen University
(596) 080-6887 (Office)
Licenses:
New York - Currently registered 2011
Education:
Washington University IN St. Louis

Business Records

Name / Title
Company / Classification
Phones & Addresses
Jian Yu
Owner
La Colmena Candy
Candy, Nut, and Confectionery Stores
12000 Washington Blvd, Whittier, CA 90606
Jian Yu
Owner
La Colmena Candy
Candy, Nut, and Confectionery Stores
12000 Washington Blvd, Whittier, CA 90606
Jian W. Yu
President
Wen Hua Farm Inc
General Crop Farm · General Farms, Primarily Crop
1905 Abbey Rd, West Palm Beach, FL 33415
8232 180 Ave, Town of Loxahatchee Groves, FL 33470
6458 Bell Blvd, Flushing, NY 11364
3 Hathaway Ln, North Hills, NY 11030
Jian Lin Yu
Chairman of the Board
United Pacific USA Corp
Music · Air Courier Services Freight Transportation Arrangement
1 Cross Is Plz #302, Jamaica, NY 11422
1 Cross Is Plz SUITE 229B, Rosedale, NY 11422
1 Cross Is Plz STE 229B, Rosedale, NY 11422
(718) 528-8889
Jian Biao Yu
Y. J. B. INTERNATIONAL, INC
47-31 35 St, Long Island City, NY 11101
134-17 Franklin Ave, Flushing, NY 11355
Jian Qiu Yu
OSCAR NAILS & SPA II INC
Physical Fitness Facility
33-17 Francis Lewis Blvd, Flushing, NY 11358
3317 Francis Lewis Blvd, Flushing, NY 11358
Jian C. Yu
Principal
A N Vaswani Mdpc
Medical Doctor's Office
520 Franklin Ave, Garden City, NY 11530
Jian Yu
Chief Executive Officer
Cheung Wing Restaurant
Financial Services · Eating Place
4017 Ave U, Brooklyn, NY 11234
Jian Yu
THE BIG SAMPLE ROOM INC
Ret Women's Clothing
330 W 38 St RM 402, New York, NY 10018
307 W 38 St, New York, NY 10018
153-09 79 Ave, Flushing, NY 11367

Publications

Us Patents

Method For Forming Metal Semiconductor Alloys In Contact Holes And Trenches

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US Patent:
20120187460, Jul 26, 2012
Filed:
Jan 25, 2011
Appl. No.:
13/013081
Inventors:
Christian Lavoie - Ossining NY, US
Zhengwen Li - Danbury CT, US
Ahmet S. Ozcan - Pleasantville NY, US
Filippos Papadatos - Wappingers Falls NY, US
Chengwen Pei - Danbury CT, US
Jian Yu - Danbury CT, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 29/78
H01L 21/336
US Classification:
257288, 438293, 257E29271, 257E21425
Abstract:
A method of forming a semiconductor device is provided that includes forming a first metal semiconductor alloy on a semiconductor containing surface, forming a dielectric layer over the first metal semiconductor alloy, forming an opening in the dielectric layer to provide an exposed surface the first metal semiconductor alloy, and forming a second metal semiconductor alloy on the exposed surface of the first metal semiconductor alloy. In another embodiment, the method includes forming a gate structure on a channel region of a semiconductor substrate, forming a dielectric layer over at least a source region and a drain region, forming an opening in the dielectric layer to provide an exposed surface the semiconductor substrate, forming a first metal semiconductor alloy on the exposed surface of the semiconductor substrate, and forming a second metal semiconductor alloy on the first metal semiconductor alloy.

Trench Silicide Contact With Low Interface Resistance

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US Patent:
20130171795, Jul 4, 2013
Filed:
Feb 21, 2013
Appl. No.:
13/772954
Inventors:
International Business Machines Corporation - Armonk NY, US
Jeffrey B. Johnson - Essex Junction VT, US
Zhengwen Li - Danbury CT, US
Jian Yu - Danbury CT, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 21/768
US Classification:
438303
Abstract:
An electrical structure is provided that includes a dielectric layer present on a semiconductor substrate and a via opening present through the dielectric layer.An interconnect is present within the via opening. A metal semiconductor alloy contact is present in the semiconductor substrate. The metal semiconductor alloy contact has a perimeter defined by a convex curvature relative to a centerline of the via opening. The endpoints for the convex curvature that defines the metal semiconductor alloy contact are aligned to an interface between a sidewall of the via opening, a sidewall of the interconnect and an upper surface of the semiconductor substrate.

Replacement Gate Mosfet With A High Performance Gate Electrode

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US Patent:
20130175641, Jul 11, 2013
Filed:
Feb 28, 2013
Appl. No.:
13/780877
Inventors:
International Business Machines Corporation - Armonk NY, US
Dechao Guo - Wappinger Falls NY, US
Randolph F. Knarr - Albany NY, US
Chengwen Pei - Danbury CT, US
Gan Wang - Fishkill NY, US
Yanfeng Wang - Fishkill NY, US
Keith Kwong Hon Wong - Wappingers Falls NY, US
Jian Yu - Danbury CT, US
Jun Yuan - San Diego CA, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 29/78
US Classification:
257410
Abstract:
In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.

Self-Aligned Bottom Plate For Metal High-K Dielectric Metal Insulator Metal (Mim) Embedded Dynamic Random Access Memory

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US Patent:
20140070293, Mar 13, 2014
Filed:
Nov 14, 2013
Appl. No.:
14/080291
Inventors:
Damon B. Farmer - White Plains NY, US
Michael P. Chudzik - Danbury CT, US
Chengwen Pei - Danbury CT, US
Keith Kwong Hon Wong - Wappingers Falls NY, US
Jian Yu - Danbury CT, US
Zhen Zhang - Sollentuna, SE
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 27/108
US Classification:
257301
Abstract:
A memory device, and a method of forming a memory device, is provided that includes a capacitor with a lower electrode of a metal semiconductor alloy. In one embodiment, the memory device includes a trench present in a semiconductor substrate including a semiconductor on insulating (SOI) layer on top of a buried dielectric layer, wherein the buried dielectric layer is on top of a base semiconductor layer. A capacitor is present in the trench, wherein the capacitor includes a lower electrode of a metal semiconductor alloy having an upper edge that is self-aligned to the upper surface of the base semiconductor layer, a high-k dielectric node layer, and an upper electrode of a metal. The memory device further includes a pass transistor in electrical communication with the capacitor.

Bispecific Hiv-1-Neutralizing Antibodies

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US Patent:
20210087259, Mar 25, 2021
Filed:
Dec 20, 2018
Appl. No.:
16/770840
Inventors:
- New York NY, US
Yaoxing Huang - Brooklyn NY, US
Jian Yu - New Providence NJ, US
International Classification:
C07K 16/10
C07K 16/28
A61K 39/42
A61P 31/18
Abstract:
In various embodiments, the present invention relates generally to using bispecific antibodies in the prevention and treatment of HIV.

Bispecific Hiv-1-Neutralizing Antibodies

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US Patent:
20180237505, Aug 23, 2018
Filed:
Dec 21, 2017
Appl. No.:
15/850832
Inventors:
- New York NY, US
Yaoxing Huang - Brooklyn NY, US
Jian Yu - New Providence NJ, US
International Classification:
C07K 16/10
C07K 16/28
Abstract:
In various embodiments, the present invention relates generally to using bispecific antibodies in the prevention and treatment of HIV.

Tri-Specific Antibodies For Hiv Therapy

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US Patent:
20180179299, Jun 28, 2018
Filed:
Jun 2, 2016
Appl. No.:
15/579280
Inventors:
- New York NY, US
Jian YU - New York NY, US
Xin YAO - New York NY, US
Yaoxing HUANG - New York NY, US
International Classification:
C07K 16/46
C07K 16/10
A61P 31/18
Abstract:
Provided are tri-specific fusion antibodies created to target multiple epitopes of the Human Immunodeficiency Virus (HIV). The fusion antibodies provide improved potency and breadth against HIV as compared to monospecific and bispecific antibodies, and additionally provide a high barrier against viral resistance. Also disclosed are pharmaceutical formulations and therapeutic methods utilizing such fusion proteins.

Bispecific Hiv-1 Neutralizing Antibodies

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US Patent:
20170247435, Aug 31, 2017
Filed:
Jan 25, 2017
Appl. No.:
15/414822
Inventors:
- New York NY, US
Yaoxing Huang - Brooklyn NY, US
Jian Yu - New Providence NJ, US
International Classification:
C07K 16/10
C07K 16/28
Abstract:
In various embodiments, the present invention relates generally to using bispecific antibodies in the prevention and treatment of HIV.
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Jian Chao Yu from Flushing, NY Get Report