Jia Lin Wang

45128154, Apr 23, 1985

Jan 31, 1983

6/462498

Wadie N. Khadder - Sunnyvale CA
Jia T. Wang - San Jose CA
Brian E. Hollins - Los Altos CA

National Semiconductor Corporation - Santa Clara CA

H01L 754
H01L 2978

148 15

In a monolithic semiconductor integrated circuit, conventional bipolar transistors are fabricated along with thin ion implanted junction field effect transistors, to create BIFET structures. After the conventional isolation diffusion, the surface oxide is stripped off and the semiconductor wafer ion implanted with slow diffusing impurities of a conductivity type, the same as the undiffused surface material. Then the bipolar transistors, along with the junction field effect transistors, are fabricated using conventional oxide masked diffusion processes. The field effect device sources and drains employ the base diffusions of the bipolar transistors while the gate contact is achieved with an emitter diffusion. The field effect device channels are formed at a depth substantially greater than that of the impurities deposited in the original ion implant. If desired, an ion implanted top gate can be established over the channel.

44122381, Oct 25, 1983

May 27, 1980

6/153486

Wadie N. Khadder - Sunnyvale CA
Jia T. Wang - San Jose CA
Brian E. Hollins - Los Altos CA

National Semiconductor Corporation - Santa Clara CA

H01L 2704

357 43

In a monolithic semiconductor integrated circuit, conventional bipolar transistors are fabricated along with thin ion implanted junction field effect transistors, to create BIFET structures. After the conventional isolation diffusion, the surface oxide is stripped off and the semiconductor wafer ion implanted with slow diffusing impurities of a conductivity type, the same as the undiffused surface material. Then the bipolar transistors, along with the junction field effect transistors, are fabricated using conventional oxide masked diffusion processes. The field effect device sources and drains employ the base diffusions of the bipolar transistors while the gate contact is achieved with an emitter diffusion. The field effect device channels are formed at a depth substantially greater than that of the impurities deposited in the original ion implant. If desired, an ion implanted top gate can be established over the channel.

20170236370, Aug 17, 2017

Oct 3, 2016

15/284228

- San Francisco CA, US
Jia Wang - South San Francisco CA, US

G07F 17/32
A63F 13/75
A63F 13/32
A63F 13/327
A63F 13/335
A63F 13/332
A63F 13/92
A63F 13/79
A63F 13/33

In example embodiments, a method of mitigating the effects of fraudulent usage of game accounts is disclosed. One or more values stored in one or more fields of a row of a database table maintained by the game networking system are received. The one or more fields correspond to features of a game account that are relevant to determining whether the game account is potentially being used fraudulently. Based on a combination of the one or more values transgressing a threshold value, it is determined that the game account is potentially being used fraudulently. At least some use of the potentially fraudulent game account is automatically locked to mitigate the effect of the potentially-fraudulent use.