Jia Fu Chen

6927454, Aug 9, 2005

Oct 7, 2003

10/680820

Kevin K. Chan - Staten Island NY, US
Jia Chen - Ossining NY, US
Shih-Fen Huang - Bedford Corners NY, US
Edward J. Nowak - Essex Junction VT, US

International Business Machines Corporation - Armonk NY

H01L029/76

257336, 257 19, 257 20, 257 24, 257192, 257213, 257344, 257392

A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiOor SiGeOinterfacial layer of 3 to 4A thick. The thin SiOor SiGeOinterfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

7378336, May 27, 2008

May 9, 2005

11/124978

Kevin K. Chan - Staten Island NY, US
Jia Chen - Ossining NY, US
Shih-Fen Huang - Bedford Corners NY, US
Edward J. Nowak - Essex Junction VT, US

International Business Machines Corporation - Armonk NY

H01L 21/3205

438592, 438593, 257413

A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiOor SiGeOinterfacial layer of 3 to 4 A thick. The thin SiOor SiGeOinterfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

7465649, Dec 16, 2008

Aug 30, 2007

11/847384

Kevin K. Chan - Staten Island NY, US
Jia Chen - Ossining NY, US
Shih-Fen Huang - Bedford Corners NY, US
Edward J. Nowak - Essex Junction VT, US

International Business Machines Corporation - Armonk NY

H01L 21/3205

438592, 438593, 257413

A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiOor SiGeOinterfacial layer of 3 to 4 A thick. The thin SiOor SiGeOinterfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

7666775, Feb 23, 2010

Apr 17, 2008

12/104570

Kevin K. Chan - Staten Island NY, US
Jia Chen - Ossining NY, US
Shih-Fen Huang - Bedford Corners NY, US
Edward J. Nowak - Essex Junction VT, US

International Businesss Machines Corporation - Armonk NY

H01L 21/3205

438592, 438593, 257413

A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiOor SiGeOinterfacial layer of 3 to 4 A thick. The thin SiOor SiGeOinterfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

20200163696, May 28, 2020

Nov 26, 2018

16/200193

- Armonk NY, US
Bruce B. Doris - Slingerlands NY, US
Devendra K. Sadana - Pleasantville NY, US
Stephen W. Bedell - Wappingers Falls NY, US
Jia Chen - New York NY, US
Hariklia Deligianni - Alpine NJ, US

A61B 17/34
G16H 20/40
C12N 5/07
A61B 5/00

An access system having a communication component that interfaces with a first device and a second device, where the first device is located inside or on an entity and coupled to a biological organism of the entity, and where the second device is located outside the entity and a controller component that controls a function of the first device, employing the communication component, to provide treatment to the biological organism of the entity coupled to the first device based on a request received from the second device.

20200164222, May 28, 2020

Nov 26, 2018

16/199627

- Armonk NY, US
Stephen W. Bedell - Wappingers Falls NY, US
Jia Chen - New York NY, US
Hariklia Deligianni - Alpine NJ, US
Devendra K. Sadana - Pleasantville NY, US

A61N 5/06
A61B 5/04
C30B 25/02
H01L 21/02

Embodiments of the invention are directed to an integrated optogenetic device. The integrated optogenetic includes a substrate layer having a first substrate region and a second substrate region. The device further includes a first contact formed over the substrate layer in the first substrate region and a second contact layer formed over the substrate layer in the second region. In addition, the device includes a light-emitting diode (LED) structure communicatively coupled to the first contact layer and a biosensor element communicatively coupled to the second contact layer. The first contact layer is configured to operate as a bottom contact that provides electrical contact to the LED structure. The first contact layer is further configured to be substantially lattice matched with the substrate layer and a bottom layer of the LED structure.

20200083398, Mar 12, 2020

Nov 13, 2019

16/681974

- Armonk NY, US
Devendra Sadana - Pleasantville NY, US
Stephen W. Bedell - Wappingers Falls NY, US
Bruce Doris - Slingerlands NY, US
Hariklia Deligianni - Alpine NJ, US
Jia Chen - New York NY, US

International Business Machines Corporation - Armonk NY

H01L 33/00
H01L 27/15
H01L 33/62
H01L 33/40
H01L 33/32

A semiconductor device includes a substrate and a buffer layer disposed on a first portion, a second portion, and a third portion of the substrate. The semiconductor device further includes a multilayer light-emitting diode (LED) stack disposed on the first portion of the substrate, and an optical sensor disposed on the second portion of the substrate. The semiconductor device further includes at least one electrode disposed on the third portion of the substrate, a first conductor in contact with the multilayer LED stack, and a second conductor in contact with the optical sensor. The at least one electrode, the first conductor, and the second conductor are formed of a glassy carbon material.

20200084498, Mar 12, 2020

Nov 12, 2019

16/681274

- Armonk NY, US
Jia CHEN - New York NY, US
Sarbajit K. Rakshit - Kolkata, IN
Craig M. TRIM - Ventura CA, US

H04N 21/422
H04N 5/44
H04N 21/439
H04N 21/488
H04N 21/442

Systems and methods for a cognitive display control are disclosed. A method includes: obtaining, by a computer device, context information of current content being displayed on a display; generating, by the computer device, a respective attention score for each one of plural users for the current content; receiving, by the computer device, input to change from the current content to new content; determining, by the computer device and based on the receiving, that the attention score of at least one of the plural users exceeds a threshold value; and controlling the display, by the computer device and based on the determining, to display an alert and a prompt to confirm or reject changing to the new content.