Jee A Kim

8354694, Jan 15, 2013

Aug 13, 2010

12/855738

Stephen W. Bedell - Wappingers Falls NY, US
Jee H. Kim - Los Angeles CA, US
Siegfried L. Maurer - Stormville NY, US
Alexander Reznicek - Mount Kisco NY, US
Devendra K. Sadana - Pleasantville NY, US

International Business Machines Corporation - Armonk NY

H01L 29/66

257192, 257342

A p-type field effect transistor (PFET) having a compressively stressed channel and an n-type field effect transistor (NFET) having a tensilely stressed channel are formed. In one embodiment, a silicon-germanium alloy is employed as a device layer, and the source and drain regions of the PFET are formed employing embedded germanium-containing regions, and source and drain regions of the NFET are formed employing embedded silicon-containing regions. In another embodiment, a germanium layer is employed as a device layer, and the source and drain regions of the PFET are formed by implanting a Group IIIA element having an atomic radius greater than the atomic radius of germanium into portions of the germanium layer, and source and drain regions of the NFET are formed employing embedded silicon-germanium alloy regions. The compressive stress and the tensile stress enhance the mobility of charge carriers in the PFET and the NFET, respectively.

20120012167, Jan 19, 2012

Jul 13, 2010

12/835238

Ahmed Abou-Kandil - Elmsford NY, US
Keith E. Fogel - Hopewell Junction NY, US
Jee H. Kim - Los Angeles CA, US
Mohamed Saad - White Plains NY, US
Devendra K. Sadana - Pleasantville NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 31/0288
H01L 31/18

136255, 438 72, 257E31128

A p-doped semiconductor layer of a photovoltaic device is formed employing an inert gas within a carrier gas. The presence of the inert gas within the carrier gas increases free hole density within the p-doped semiconductor layer. This decreases the Schottky barrier at an interface with a transparent conductive material layer, thereby significantly reducing the series resistance of the photovoltaic device. The reduction of the series resistance increases the open-circuit voltage, the fill factor, and the efficiency of the photovoltaic device. This effect is more prominent if the p-doped semiconductor layer is also doped with carbon, and has a band gap greater than 1.85V. The p-doped semiconductor material of the p-doped semiconductor layer can be hydrogenated if the carrier gas includes a mix of Hand the inert gas.

20120031476, Feb 9, 2012

Aug 4, 2010

12/849966

Stephen W. Bedell - Wappingers Falls NY, US
Harold J. Hovel - Katonah NY, US
Daniel A. Inns - Palo Alto CA, US
Jee H. Kim - Los Angeles CA, US
Alexander Reznicek - Mount Kisco NY, US
Devendra K. Sadana - Pleasantville NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 31/0352
H01L 31/18

136255, 438 72, 257E31032

A photovoltaic device includes a composition modulated semiconductor structure including a p-doped first semiconductor material layer, a first intrinsic compositionally-graded semiconductor material layer, an intrinsic semiconductor material layer, a second intrinsic compositionally-graded semiconductor layer, and an n-doped first semiconductor material layer. The first and second intrinsic compositionally-graded semiconductor material layers include an alloy of a first semiconductor material having a greater band gap width and a second semiconductor material having a smaller band gap with, and the concentration of the second semiconductor material increases toward the intrinsic semiconductor material layer in the first and second compositionally-graded semiconductor material layers. The photovoltaic device provides an open circuit voltage comparable to that of the first semiconductor material, and a short circuit current comparable to that of the second semiconductor material, thereby increasing the efficiency of the photovoltaic device.

20120031477, Feb 9, 2012

Aug 4, 2010

12/850272

Keith E. Fogel - Hopewell Junction NY, US
Jee H. Kim - Los Angeles CA, US
Devendra K. Sadana - Pleasantville NY, US
George S. Tulevski - White Plains NY, US
Ahmed Abou-Kandil - Elmsford NY, US
Hisham S. Mohamed - Clifton Park NY, US
Mohamed Saad - White Plains NY, US
Osama Tobail - Elmsford NY, US

EGYPT NANOTECHNOLOGY CENTER - Cairo-Alexandria
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 31/108
H01L 31/18

136255, 438 92, 977750, 977734, 257E31065

A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.

20120152352, Jun 21, 2012

Dec 15, 2010

12/968490

Tze-Chiang Chen - Yorktown Heights NY, US
Jee H. Kim - Los Angeles CA, US
Devendra K. Sadana - Pleasantville NY, US
Ahmed Abou-Kandil - Elmsford NY, US
Mohamed Saad - White Plains NY, US

EGYPT NANOTECHNOLOGY CENTER - Cairo-Alexandria
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 31/0264
H01L 31/18

136261, 438 69, 257E31001

A germanium-containing layer is provided between a p-doped silicon-containing layer and a transparent conductive material layer of a photovoltaic device. The germanium-containing layer can be a p-doped silicon-germanium alloy layer or a germanium layer. The germanium-containing layer has a greater atomic concentration of germanium than the p-doped silicon-containing layer. The presence of the germanium-containing layer has the effect of reducing the series resistance and increasing the shunt resistance of the photovoltaic device, thereby increasing the fill factor and the efficiency of the photovoltaic device. In case a silicon-germanium alloy layer is employed, the closed circuit current density also increases.

20120318339, Dec 20, 2012

Aug 30, 2012

13/599591

Ahmed Abou-Kandil - Elmsford NY, US
Keith E. Fogel - Hopewell Junction NY, US
Jee H. Kim - Los Angeles CA, US
Mohamed Saad - White Plains NY, US
Devendra K. Sadana - Pleasantville NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 31/075

136255

A p-doped semiconductor layer of a photovoltaic device is formed employing an inert gas within a carrier gas. The presence of the inert gas within the carrier gas increases free hole density within the p-doped semiconductor layer. This decreases the Schottky barrier at an interface with a transparent conductive material layer, thereby significantly reducing the series resistance of the photovoltaic device. The reduction of the series resistance increases the open-circuit voltage, the fill factor, and the efficiency of the photovoltaic device. This effect is more prominent if the p-doped semiconductor layer is also doped with carbon, and has a band gap greater than 1.85V. The p-doped semiconductor material of the p-doped semiconductor layer can be hydrogenated if the carrier gas includes a mix of Hand the inert gas.

20210011604, Jan 14, 2021

Jul 8, 2019

16/505005

- Suwon-si, KR
Jee Hoon Kim - Cupertino CA, US
Chang Long Zhu Jin - San Mateo CA, US

G06F 3/041
G06F 3/044
H03K 17/955

A hover touch controller device includes a touch sensor having a touch surface and a proximity sensor. The touch sensor provides two-dimensional position information on when and where a user's finger touches the touch surface. The proximity sensor provides three-dimensional position information on pre-touch events. The pre-touch events corresponding to the user's finger hovering over the touch surface within some maximum depth. The hover touch controller device further includes a processor. The processor determines from the three-dimensional information a hover point projected on the touch surface and determines from the two-dimensional information a touch point on the touch surface. The processor communicates the hover point and the contact point to a display device. This can include correcting for any perceived user interaction issues associated an offset between the hover point and the touch point.

20140109961, Apr 24, 2014

Jan 2, 2014

14/146240

- Armonk NY, US
Harold J. Hovel - Katonah NY, US
Daniel A. Inns - Palo Alto CA, US
Jee H. Kim - Los Angeles CA, US
Alexander Reznicek - Mount Kisco NY, US
Devendra K. Sadana - Pleasantville NY, US

International Business Machines Corporation - Armonk NY

H01L 31/065
H01L 31/18
H01L 31/075

136255, 438 87

A photovoltaic device includes a composition modulated semiconductor structure including a p-doped first semiconductor material layer, a first intrinsic compositionally-graded semiconductor material layer, an intrinsic semiconductor material layer, a second intrinsic compositionally-graded semiconductor layer, and an n-doped first semiconductor material layer. The first and second intrinsic compositionally-graded semiconductor material layers include an alloy of a first semiconductor material having a greater band gap width and a second semiconductor material having a smaller band gap with, and the concentration of the second semiconductor material increases toward the intrinsic semiconductor material layer in the first and second compositionally-graded semiconductor material layers. The photovoltaic device provides an open circuit voltage comparable to that of the first semiconductor material, and a short circuit current comparable to that of the second semiconductor material, thereby increasing the efficiency of the photovoltaic device.