Jee K Kim

8178430, May 15, 2012

Apr 8, 2009

12/420258

Jee Hwan Kim - White Plains NY, US
Stephen W. Bedell - Wappingers Falls NY, US
Siegfried Maurer - Stormville NY, US
Devendra K. Sadana - Pleasantville NY, US

International Business Machines Corporation - Armonk NY

H01L 21/265
H01L 21/425

438527, 438919, 257E21335

A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a compensating atomic radius. Selecting the n-type dopant species and the compensating species in such manner that the size of the semiconductor atomic radius is inbetween the dopant atomic radius and the compensating atomic radius. A further method is disclosed for generating n-type carriers in germanium (Ge). The method includes setting a target concentration for the carriers, implanting a dose of an n-type dopant species into the Ge, and selecting the dose to correspond to a fraction of the target carrier concentration. Thermal annealing the Ge in such manner as to activate the n-type dopant species and to repair a least a portion of the implantation damage. Repeating the implantation and the thermal annealing until the target n-type carrier concentration has been reached.

8343863, Jan 1, 2013

Jan 25, 2012

13/357656

Jee Hwan Kim - White Plains NY, US
Stephen W. Bedell - Wappingers Falls NY, US
Siegfried Maurer - Stormville NY, US
Devendra K. Sadana - Pleasantville NY, US

International Business Machines Corporation - Armonk NY

H01L 21/265
H01L 21/336

438529, 257E21336, 25049221, 427523

A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a compensating atomic radius. Selecting the n-type dopant species and the compensating species in such manner that the size of the semiconductor atomic radius is inbetween the dopant atomic radius and the compensating atomic radius. A further method is disclosed for generating n-type carriers in germanium (Ge). The method includes setting a target concentration for the carriers, implanting a dose of an n-type dopant species into the Ge, and selecting the dose to correspond to a fraction of the target carrier concentration. Thermal annealing the Ge in such manner as to activate the n-type dopant species and to repair a least a portion of the implantation damage. Repeating the implantation and the thermal annealing until the target n-type carrier concentration has been reached.

8476152, Jul 2, 2013

Mar 31, 2012

13/436850

Jee Hwan Kim - White Plains NY, US
Stephen W. Bedell - Wappingers Falls NY, US
Siegfried Maurer - Stormville NY, US
Devendra K. Sadana - Pleasantville NY, US

International Business Machines Corporation - Armonk NY

H01L 21/265

438514, 438919, 117936, 257E21335, 257E21336

A method includes epitaxially growing a germanium (Ge) layer onto a Ge substrate and incorporating a compensating species with a compensating atomic radius into the Ge layer. The method includes implanting an n-type dopant species with a dopant atomic radius into the Ge layer. The method includes selecting the n-type dopant species and the compensating species in such manner that the size of the Ge atomic radius is inbetween the n-type dopant atomic radius and the compensating atomic radius.

8642431, Feb 4, 2014

Apr 2, 2012

13/437036

Jee Hwan Kim - White Plains NY, US
Stephen W. Bedell - Wappingers Falls NY, US
Siegfried Maurer - Stormville NY, US
Devendra K. Sadana - Pleasantville NY, US

International Business Machines Corporation - Armonk NY

H01L 21/336

438285, 438300, 438569, 257E21431, 257E21619

A field effect transistor (FET) has a channel hosted in Ge. The FET has silicon-germanium (SiGe) source and drain formed by selective epitaxy. The SiGe source and drain exert a tensile stress onto the Ge channel. During forming of the SiGe source and drain, an n-type dopant species and a compensating species are being incorporated into the SiGe source and drain. The n-type dopant species and the compensating species are so selected that the size of the SiGe atomic radius is inbetween the dopant atomic radius and the compensating species atomic radius.

20120012167, Jan 19, 2012

Jul 13, 2010

12/835238

Ahmed Abou-Kandil - Elmsford NY, US
Keith E. Fogel - Hopewell Junction NY, US
Jee H. Kim - Los Angeles CA, US
Mohamed Saad - White Plains NY, US
Devendra K. Sadana - Pleasantville NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 31/0288
H01L 31/18

136255, 438 72, 257E31128

A p-doped semiconductor layer of a photovoltaic device is formed employing an inert gas within a carrier gas. The presence of the inert gas within the carrier gas increases free hole density within the p-doped semiconductor layer. This decreases the Schottky barrier at an interface with a transparent conductive material layer, thereby significantly reducing the series resistance of the photovoltaic device. The reduction of the series resistance increases the open-circuit voltage, the fill factor, and the efficiency of the photovoltaic device. This effect is more prominent if the p-doped semiconductor layer is also doped with carbon, and has a band gap greater than 1.85V. The p-doped semiconductor material of the p-doped semiconductor layer can be hydrogenated if the carrier gas includes a mix of Hand the inert gas.

20120152352, Jun 21, 2012

Dec 15, 2010

12/968490

Tze-Chiang Chen - Yorktown Heights NY, US
Jee H. Kim - Los Angeles CA, US
Devendra K. Sadana - Pleasantville NY, US
Ahmed Abou-Kandil - Elmsford NY, US
Mohamed Saad - White Plains NY, US

EGYPT NANOTECHNOLOGY CENTER - Cairo-Alexandria
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 31/0264
H01L 31/18

136261, 438 69, 257E31001

A germanium-containing layer is provided between a p-doped silicon-containing layer and a transparent conductive material layer of a photovoltaic device. The germanium-containing layer can be a p-doped silicon-germanium alloy layer or a germanium layer. The germanium-containing layer has a greater atomic concentration of germanium than the p-doped silicon-containing layer. The presence of the germanium-containing layer has the effect of reducing the series resistance and increasing the shunt resistance of the photovoltaic device, thereby increasing the fill factor and the efficiency of the photovoltaic device. In case a silicon-germanium alloy layer is employed, the closed circuit current density also increases.

20120318339, Dec 20, 2012

Aug 30, 2012

13/599591

Ahmed Abou-Kandil - Elmsford NY, US
Keith E. Fogel - Hopewell Junction NY, US
Jee H. Kim - Los Angeles CA, US
Mohamed Saad - White Plains NY, US
Devendra K. Sadana - Pleasantville NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 31/075

136255

A p-doped semiconductor layer of a photovoltaic device is formed employing an inert gas within a carrier gas. The presence of the inert gas within the carrier gas increases free hole density within the p-doped semiconductor layer. This decreases the Schottky barrier at an interface with a transparent conductive material layer, thereby significantly reducing the series resistance of the photovoltaic device. The reduction of the series resistance increases the open-circuit voltage, the fill factor, and the efficiency of the photovoltaic device. This effect is more prominent if the p-doped semiconductor layer is also doped with carbon, and has a band gap greater than 1.85V. The p-doped semiconductor material of the p-doped semiconductor layer can be hydrogenated if the carrier gas includes a mix of Hand the inert gas.

20130266574, Oct 10, 2013

Dec 12, 2012

13/712268

Viktoria GUSAROVA - Springfield NJ, US
Jee H. KIM - White Plains NY, US
Gang CHEN - Yorktown Heights NY, US

REGENERON PHARMACEUTICALS, INC. - Tarrytown NY

C07K 16/26
A61K 45/06
A61K 31/216
A61K 39/395

4241391, 5303879, 536 2353, 4353201, 435331, 435 696

A fully human antibody or antigen-binding fragment of a human antibody that specifically binds and inhibits human angiopoietin-like protein 4 (hANGPTL4) is provided. The human anti-hANGPTL4 antibodies are useful in treating diseases or disorders associated with ANGPTL4, such as hyperlipidemia, hyperlipoproteinemia and dyslipidemia, including hypertriglyceridemia, hypercholesterolemia, chylomicronemia, and so forth. Furthermore, the anti-hANGPTL4 antibodies can be administered to a subject in need thereof to prevent or treat diseases or disorders, for which abnormal lipid metabolism is a risk factor. Such diseases or disorders include cardiovascular diseases, such as atherosclerosis and coronary artery diseases; acute pancreatitis; nonalcoholic steatohepatitis (NASH); diabetes; obesity; and the like.