Jane Lee

7582518, Sep 1, 2009

Nov 14, 2006

11/598817

Linh Dang - Lawndale CA, US
Wayne Yoshida - Hermosa Beach CA, US
Gerry Mei - Manhattan Beach CA, US
Jennifer Wang - Redondo Beach CA, US
Po-Hsin Liu - Anaheim CA, US
Jane Lee - Torrance CA, US
Weidong Liu - San Marino CA, US
Mike Barsky - Sherman Oaks CA, US
Rich Lai - Redondo Beach CA, US

Northrop Grumman Space & Mission Systems Corp. - Los Angeles CA

H01L 21/338

438182, 438577, 438579, 257E21205, 257E21587

In a method of forming a semiconductor device on a semiconductor substrate (), a photoresist layer () is deposited on the semiconductor substrate; a window () is formed in the photoresist layer () by electron beam lithography; a conformal layer () is deposited on the photoresist layer () and in the window (); and substantially all of the conformal layer () is selectively removed from the photoresist layer () and a bottom portion of the window to form dielectric sidewalls () in the window ().

7709860, May 4, 2010

Apr 29, 2009

12/432113

Linh Dang - Lawndale CA, US
Wayne Yoshida - Hermosa Beach CA, US
Xiaobing Mei - Manhattan Beach CA, US
Jennifer Wang - Redondo Beach CA, US
Po-Hsin Liu - Anaheim CA, US
Jane Lee - Torrance CA, US
Weidong Liu - San Marino CA, US
Michael Barsky - Sherman Oaks CA, US
Richard Lai - Redondo Beach CA, US

Northrop Grumman Space & Mission Systems Corp. - Los Angeles CA

H01L 29/778

257194, 257E29246

In a method of forming a semiconductor device on a semiconductor substrate (), a photoresist layer () is deposited on the semiconductor substrate; a window () is formed in the photoresist layer () by electron beam lithography; a conformal layer () is deposited on the photoresist layer () and in the window (); and substantially all of the conformal layer () is selectively removed from the photoresist layer () and a bottom portion of the window to form dielectric sidewalls () in the window ().

D637942, May 17, 2011

Aug 20, 2010

29/368230

Jane Lee - Fullerton CA, US
Joshua J. Kompa - Trabuco Canyon CA, US

Ossur HF - Reykjavik

0207

D11218

D643537, Aug 16, 2011

Sep 22, 2009

29/343928

Jane Lee - Fullerton CA, US

Ossur HF - Reykjavik

2401

D24192

8002724, Aug 23, 2011

May 15, 2009

12/466577

Irving Hu - Laguna Beach CA, US
Jane Lee - Fullerton CA, US

OSSUR HF - Reykjavik

A61F 5/00
A61F 5/37

602 27, 602 23, 128882

An orthopedic device in the form of a circumferential walker includes a first member (posterior shell) and a second member (dorsal shell) corresponding to the first member. An outsole or plantar shell portion is attached to, or formed on or with the posterior shell. An expansion joint is positioned in the posterior shell or dorsal shell to expand to accommodate larger sized lower legs. The dorsal and posterior shells may include flexible or resilient edge portions to reduce pressure points and to further accommodate users having larger sized lower legs. The dorsal shell also includes a flexible or resilient connecting portion to accommodate users having larger ankles and feet and to reduce or eliminate the formation of a pressure point along the dorsal shell. Quick-connecting buckle assemblies can be provided to allow a user to quickly don and doff the orthopedic device.

D657879, Apr 17, 2012

Sep 9, 2011

29/401249

Jane Lee - Fullerton CA, US
Palmi Einarsson - Kopavogur, IS
Brice Robertson - Sunnyvale CA, US

Ossur HF - Reykjavik

2401

D24190

D665505, Aug 14, 2012

Feb 17, 2012

29/413674

Jane Lee - Fullerton CA, US
Palmi Einarsson - Kopavogur, IS
Brice Robertson - Sunnyvale CA, US

Ossur HF - Reykjavik

2401

D24190

8421121, Apr 16, 2013

Apr 18, 2007

11/788145

Yeong-Chang Chou - Irvine CA, US
Jay Crawford - Long Beach CA, US
Jane Lee - Torrance CA, US
Jeffrey Ming-Jer Yang - Cerritos CA, US
John Bradley Boos - Springfield VA, US
Nicolas Alexandrou Papanicolaou - Potomac MD, US

Northrop Grumman Systems Corporation - Falls Church VA

H01L 29/778

257194, 257192, 257E29246

An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.