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Hui Shi Chen

from Milpitas, CA
Age ~59

Hui Chen Phones & Addresses

  • Milpitas, CA
  • San Jose, CA
  • Converse, TX
  • San Antonio, TX
  • Round Rock, TX
  • Memphis, TN
  • Phoenix, AZ
  • Santa Rosa, CA
  • Yorba Linda, CA
  • Sunnyvale, CA
  • Merrimac, MA
  • Ozone Park, NY
  • Lehigh Acres, FL
  • Lee, FL

Professional Records

Medicine Doctors

Hui Chen Photo 1

Dr. Hui J Chen, Boston MA - MD (Doctor of Medicine)

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Specialties:
Neuroradiology
Age:
47
Address:
INFECTIOUS DISEASES DIVISION OF MASSACHUSETTS GENERAL HOSPITAL
55 Fruit St, Boston, MA 02114
(617) 726-3906 (Phone), (617) 726-7416 (Fax)

757 Westwood Plz, Los Angeles, CA 90095

2125 Oak Grove Rd Suite 200, Walnut Creek, CA 94598
(925) 296-7150 (Phone), (925) 296-7171 (Fax)

20103 Lake Chabot Rd, Castro Valley, CA 94546
(925) 296-7150 (Phone), (925) 296-7171 (Fax)
Certifications:
Diagnostic Radiology, 2010
Neuroradiology, 2012
Awards:
Healthgrades Honor Roll
Languages:
English
Hospitals:
INFECTIOUS DISEASES DIVISION OF MASSACHUSETTS GENERAL HOSPITAL
55 Fruit St, Boston, MA 02114

2125 Oak Grove Rd Suite 200, Walnut Creek, CA 94598

20103 Lake Chabot Rd, Castro Valley, CA 94546

757 Westwood Plz, Los Angeles, CA 90095

Ronald Reagan UCLA Medical Center
757 Westwood Plaza, Los Angeles, CA 90095
Education:
Medical School
D Geffen Sch Of Med-Ucla
Graduated: 2005
Hui Chen Photo 2

Hui Chen

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Specialties:
Hematology/Oncology
Work:
Brookdale University Hospital Residency Program Hematology Oncology
1 Brookdale Plz RM 175, Brooklyn, NY 11212
(718) 240-5722 (phone), (718) 240-6493 (fax)
Languages:
English
Description:
Dr. Chen works in Brooklyn, NY and specializes in Hematology/Oncology. Dr. Chen is affiliated with Brookdale University Hospital.
Hui Chen Photo 3

Hui Jie Chen

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Specialties:
Radiology
Diagnostic Radiology
Education:
University of California at Los Angeles (2005)
Hui Chen Photo 4

Hui Chun Chen

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Specialties:
Family Medicine
Internal Medicine
Education:
George Washington University (1998)
Hui Chen Photo 5

Hui J Chen, Castro Valley CA

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Specialties:
Radiologist
Address:
20103 Lake Chabot Rd, Castro Valley, CA 94546
757 Westwood Plz, Los Angeles, CA 90095
2125 Oak Grove Rd, Walnut Creek, CA 94598

Real Estate Brokers

Hui Chen Photo 6

Hui Chen, Las NV Real estate agent

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Specialties:
Buyer's Agent
Listing Agent
Work:
none
None
(775) 287-7986 (Office)

Resumes

Resumes

Hui Chen Photo 7

Hui (Joan) Chen Oakland, CA

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Work:
Evergreen Shipping Agency (America)
Oakland, CA
Aug 2011 to Mar 2014
Inside Sales Representative

Yans International Inc
Union City, CA
Dec 2010 to Feb 2011
Manager Assistant

Farmer Joe's
Oakland, CA
Oct 2009 to Dec 2010
Deli Clerk

Chabot College
Hayward, CA
Sep 2005 to May 2008
Student Assistant

Education:
San Jose State University
San Jose, CA
2009 to 2011
BS in International Business, Minor in Chinese

Chabot College
Hayward, CA
2005 to 2009
AA in Business Administration in Accounting

Business Records

Name / Title
Company / Classification
Phones & Addresses
Hui Chen
Owner
Ko Sushi
Eating Places
1619 York Ave, New York, NY 10028
Website: newkosushi.com
Hui Fang Chen
Chairman
Aaa Young Shuen Realty Inc
Real Estate
14714 45Th Ave, Flushing, NY 11355
Hui Chen
Owner
Ko Sushi
Eating Places
1619 York Ave # 1, New York, NY 10028
Hui Chen
Programmer Analyst
Multiplan, Inc.
Management Consulting Services
115 5Th Ave Fl 7, New York, NY 10003
Hui Ying Chen
President
STAR SERVICES, INC
Services-Misc
34842 Candice Ct, Fremont, CA 94555
Hui Yi Chen
Vice Presi, Treasurer
WEI OT INC
Eating Place
3304 Broadway, San Antonio, TX 78209
(210) 824-0279
Hui Chen
Zymob LLC
Internet Service · Nonclassifiable Establishments
5178 Mowry Ave, Fremont, CA 94538
567 Sutter St, San Francisco, CA 94102
Hui Chen
TANUKI JAPANESE INC
Hui Chen
Owner
Ko Sushi
Eating Places
1619 York Ave, New York, NY 10028
Website: newkosushi.com
Hui Fang Chen
Chairman
Aaa Young Shuen Realty Inc
Real Estate
14714 45Th Ave, Flushing, NY 11355
Hui Chen
Owner
Ko Sushi
Eating Places
1619 York Ave # 1, New York, NY 10028
Hui Chen
Programmer Analyst
Multiplan, Inc.
Management Consulting Services
115 5Th Ave Fl 7, New York, NY 10003

Publications

Wikipedia References

Hui Chen Photo 8

Hui Chen

Hui Chen Photo 9

Hui Chen (Economist)

Amazon

DR. THEODORE CHEN - The Pioneer of Chinese American Education

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Dr. Hsi-En “Theodore” Chen had a long and distinguished career in higher education, both in the United States and in China. Dr. Chen was the first professor of Chinese ancestry to be granted tenure at the University of Southern California; his hiring opened the gates for Chinese scholars to teach in...

Author

Wen Hui Chen

Binding

Kindle Edition

Pages

182

ISBN #

10

Mobile Telemedicine: A Computing and Networking Perspective

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The concept of medical treatment from a distance (in absentia care) is actually quite ancient, dating back to tribal days where smoke signals were used to warn of serious disease in a community. Nowadays, telemedicine is used to facilitate treatment in rural areas, where the nearest doctor is miles ...

Binding

Hardcover

Pages

440

Publisher

Auerbach Publications

ISBN #

1420060465

EAN Code

9781420060461

ISBN #

9

Memoirs of Chen BuLei( Chen BuLei Hui Yi Lu) --Simplified Chinese Edition -- BookDNA Chinese Classics

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Author

Chen BuLei

Binding

Kindle Edition

Pages

75

Publisher

ZHE JIANG PUBLISHING UNITED GROUP

ISBN #

6

Easy & Fun Chinese for Kids

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Easy & Fun Chinese for Kids is designed with non-native children learning Chinese as a foreign language in mind. It follows the rules of teaching foreign language to children and makes learning a great fun. Pinyin, spoken Chinese, Chinese children's songs, Chinese characters, and short passages are ...

Author

Chief Editor: Chen Xiaohui

Binding

Paperback

Pages

299

Publisher

Sinolingua Co.,Ltd

ISBN #

7802003997

EAN Code

9787802003996

ISBN #

15

You Are The Best (Chinese Edition)

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Everyone has experienced rejection, failure and all kinds of unpleasant things in life, and we may doubt if we are good enough or if there is no one in the world that loves us in time of failure. However, you need believe, you are the best. So when rainy day comes, we need try to be the sun for ours...

Author

Yang Yang, Zhang Hui Chen

Binding

Paperback

Pages

244

Publisher

Hunan literature and Art Publishing House

ISBN #

7540466146

EAN Code

9787540466145

ISBN #

14

Monte Carlo Methods in Bayesian Computation (Springer Series in Statistics)

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Dealing with methods for sampling from posterior distributions and how to compute posterior quantities of interest using Markov chain Monte Carlo (MCMC) samples, this book addresses such topics as improving simulation accuracy, marginal posterior density estimation, estimation of normalizing constan...

Author

Ming-Hui Chen, Qi-Man Shao, Joseph G. Ibrahim

Binding

Hardcover

Pages

387

Publisher

Springer

ISBN #

0387989358

EAN Code

9780387989358

ISBN #

13

World Century Compendium to TCM:Volume 3: Introduction to Chinese Materia Medica (Introduction to Tcm)

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This book aims to provide readers with adequate knowledge for clinical application of Chinese medicine, which is in line with the fundamental principle of “correspondence of Chinese medicinals and patterns.” It contains a brief introduction to relative theories, divides these medicinals by actions i...

Author

Jin Yang, Huang Huang, Li-jiang Zhu, Yun-hui Chen

Binding

Kindle Edition

Pages

575

Publisher

WCPC

ISBN #

11

Human Ear Recognition by Computer (Advances in Computer Vision and Pattern Recognition)

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At the frontier of research, this book offers complete coverage of human ear recognition. It explores all aspects of 3D ear recognition: representation, detection, recognition, indexing and performance prediction. It uses large datasets to quantify and compare the performance of various techniques. ...

Author

Bir Bhanu, Hui Chen

Binding

Hardcover

Pages

206

Publisher

Springer

ISBN #

1848001282

EAN Code

9781848001282

ISBN #

8

Isbn (Books And Publications)

My Blanket

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Author

Hui Chuan Chen

ISBN #

0805941231

Us Patents

Nh3 Plasma Descumming And Resist Stripping In Semiconductor Applications

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US Patent:
6455431, Sep 24, 2002
Filed:
Aug 1, 2000
Appl. No.:
09/629329
Inventors:
Chang Lin Hsieh - San Jose CA
Hui Chen - Santa Clara CA
Jie Yuan - San Jose CA
Yan Ye - Saratoga CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H01L 21302
US Classification:
438691, 438710
Abstract:
In general, the present disclosure pertains to a method for removing photoresist from locations on a semiconductor structure where its presence is undesired. In one embodiment, a method is disclosed for descumming residual photoresist material from areas where it is not desired after patterning of the photoresist. In another embodiment, a misaligned patterned photoresist is stripped from a semiconductor substrate surface. In particular, the method comprises exposing the semiconductor structure to a plasma generated from a source gas comprising NH. A substrate bias voltage is utilized in both methods in order to produce anisotropic etching. In the descumming embodiment, the critical dimensions of the patterned photoresist are maintained. In the photoresist stripping embodiment, a patterned photoresist is removed without adversely affecting a partially exposed underlying layer of an organic dielectric.

Method For Enhancing Plasma Processing Performance

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US Patent:
6569775, May 27, 2003
Filed:
Feb 17, 2000
Appl. No.:
09/506065
Inventors:
Peter K. Loewenhardt - San Jose CA
John M. Yamartino - Palo Alto CA
Hui Chen - Santa Clara CA
Diana Xiaobing Ma - Saratoga CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 2100
US Classification:
438709, 216 63, 216 66, 216 75, 216 78, 438712, 438714, 438720, 438742, 15634524
Abstract:
A method of improving plasma processing of a semiconductor wafer by exposing the wafer or the plasma to photons while the wafer is being processed. One embodiment of the method comprises the steps of etching an aluminum layer and, during the etching, exposing the semiconductor wafer containing the aluminum layer to photons that photodesorb copper chloride from the surface of the layer thus improving the etch process performance.

Methods And Compositions For Inhibiting Cell Proliferative Disorders

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US Patent:
6596878, Jul 22, 2003
Filed:
Sep 18, 2001
Appl. No.:
09/953933
Inventors:
Hui Chen - Palo Alto CA
Aviv Gazit - Jerusalem, IL
Alexander Levitzki - Jerusalem, IL
Klaus Peter Hirth - San Francisco CA
Elaina Mann - Alameda CA
Laura K. Shawver - San Francisco CA
Jianming Tsai - San Francisco CA
Peng Cho Tang - Moraga CA
Assignee:
Yissum Research Development Company of the Hebrew University - Jerusalem
Sugen, Inc. - South San Francisco CA
International Classification:
C07D23138
US Classification:
5483717, 558402, 558404
Abstract:
The present invention concerns compounds and their use to inhibit the activity of a receptor tyrosine kinase. The invention is preferably used to treat cell proliferative disorders such as cancers characterized by over-activity or inappropriate activity HER2 or EGFR.

Method Of Etching Carbon-Containing Silicon Oxide Films

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US Patent:
6607675, Aug 19, 2003
Filed:
Aug 29, 2000
Appl. No.:
09/650975
Inventors:
Chang Lin Hsieh - San Jose CA
Hui Chen - Santa Clara CA
Jie Yuan - San Jose CA
Yan Ye - Saratoga CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H01L 21027
US Classification:
216 67, 216 72, 216 79, 216 80, 438714, 438723, 438738, 438743
Abstract:
We have discovered a method for plasma etching a carbon-containing silicon oxide film which provides excellent etch profile control, a rapid etch rate of the carbon-containing silicon oxide film, and high selectivity for etching the carbon-containing silicon oxide film preferentially to an overlying photoresist masking material. When the method of the invention is used, a higher carbon content in the carbon-containing silicon oxide film results in a faster etch rate, at least up to a carbon content of 20 atomic percent. In particular, the carbon-containing silicon oxide film is plasma etched using a plasma generated from a source gas comprising NH and C F. It is necessary to achieve the proper balance between the relative amounts of NH and C F in the plasma source gas in order to provide a balance between etch by-product polymer deposition and removal on various surfaces of the substrate being etched. The NH gas functions to âclean upâ deposited polymer on the photoresist surface, on the etched surface, and on process chamber surfaces. The atomic ratio of carbon:nitrogen in the plasma source gas typically ranges from about 0.

Methods For Etching An Organic Anti-Reflective Coating

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US Patent:
6649532, Nov 18, 2003
Filed:
May 9, 2002
Appl. No.:
10/143489
Inventors:
Hui Chen - Burlingame CA
Xikun Wang - Sunnyvale CA
Hong Shih - Walnut Creek CA
Chun Yan - San Jose CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H01L 21302
US Classification:
438714, 438725, 438717, 438736, 438715, 430 5
Abstract:
One embodiment of the present invention is a process for etching an organic anti-reflective coating on a base of a substrate, the process including steps of: (a) placing the substrate into a processing chamber; (b) introducing into the processing chamber a processing gas including one or more of carbon monoxide (CO), carbon dioxide (CO ), and sulfur oxide (SO ); and (c) forming a plasma from the processing gas to etch the organic anti-reflective coating layer.

Etch Process For Dielectric Materials Comprising Oxidized Organo Silane Materials

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US Patent:
6762127, Jul 13, 2004
Filed:
Aug 23, 2001
Appl. No.:
09/938432
Inventors:
Yves Pierre Boiteux - Campbell CA, 95008
Hui Chen - Burlingame CA, 94010
Ivano Gregoratto - Redwood Shores CA, 94064
Chang-Lin Hsieh - San Jose CA, 95129
Hoiman Hung - San Jose CA, 95129
Sum-Yee Betty Tang - San Jose CA, 95131
International Classification:
H01L 21304
US Classification:
438702, 438710, 438723, 438743, 216 67
Abstract:
The present invention provides a novel etching technique for etching a layer of C-doped silicon oxide, such as a partially oxidized organo silane material. This technique, employing CH F /Ar chemistry at low bias and low to intermediate pressure, provides high etch selectivity to silicon oxide and improved selectivity to organic photoresist. Structures including a layer of partially oxidized organo silane material ( ) deposited on a layer of silicon oxide ( ) were etched according to the novel technique, forming relatively narrow trenches ( and ) and wider trenches ( and ). The technique is also suitable for forming dual damascene structures ( and ). In additional embodiments, manufacturing systems ( ) are provided for fabricating IC structures of the present invention. These systems include a controller ( ) that is adapted for interacting with a plurality of fabricating stations ( and ).

Method For Planarizing A Copper Interconnect Structure

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US Patent:
6784107, Aug 31, 2004
Filed:
Mar 18, 2003
Appl. No.:
10/391325
Inventors:
Hui Chen - Milpitas CA, 95035
Chun Yan - San Jose CA, 95129
International Classification:
H01L 21302
US Classification:
438689, 700121
Abstract:
A method of planarizing a copper interconnect structure using an atomic layer removal (ALR) technique to planarize a copper layer. In one embodiment, the ALR process performs a plurality of cycles, each cycle having a period of forming a film of copper fluoride on the copper layer and a period of removing the film of copper fluoride. The ALR process is repeated until a barrier layer beneath the copper layer is then etched to expose a dielectric material. The remaining copper forms a conductive line that is substantially coplanar with the dielectric material.

Process For Selectively Etching Dielectric Layers

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US Patent:
6905968, Jun 14, 2005
Filed:
Dec 12, 2001
Appl. No.:
10/016562
Inventors:
Chang-Lin Hsieh - San Jose CA, US
Jie Yuan - San Jose CA, US
Hui Chen - San Jose CA, US
Theodoros Panagopoulos - Cupertino CA, US
Yan Ye - Campbell CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L021/302
H01L021/461
US Classification:
438706, 438714, 438723, 438725
Abstract:
A method is provided for etching a dielectric structure. The dielectric structure comprises: (a) a layer of undoped silicon oxide or F-doped silicon oxide; and (b) a layer of C,H-doped silicon oxide. The dielectric structure is etched in a plasma-etching step, which plasma-etching step is conducted using a plasma source gas that comprises nitrogen atoms and fluorine atoms. As one example, the plasma source gas can comprise a gaseous species that comprises one or more nitrogen atoms and one or more fluorine atoms (e. g. , NF). As another example, the plasma source gas can comprise (a) a gaseous species that comprises one or more nitrogen atoms (e. g. , N) and (b) a gaseous species that comprises one or more fluorine atoms (e. g. , a fluorocarbon gas such as CF). In this etching step, the layer of C,H-doped silicon oxide is preferentially etched relative to the layer of undoped silicon oxide or F-doped silicon oxide.
Hui Shi Chen from Milpitas, CA, age ~59 Get Report