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Ho Meitzu Chen

from Flushing, NY
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Also known as:
Ho Mei Tzu Chen, Ho M Tzu, Meitzu Chen Ho
Related to:
Weichi Grace Liao, 55Yung F Chan, 56Brian Zhang, 49Michelle J Chen, 39
Connected to:
Ai S Chen, 71Ai Chen, 70Alfred C Chen, 53Alix Y Chen, 33Aloysius J Chen, 94Amie K Chen, 63Amily M Chen, 35Andersen Y Chen, 33Angela B Chen, 44Angeline Chen, 48

Ho Chen Phones & Addresses

  • Flushing, NY
  • Harrison, NJ
  • Scotch Plains, NJ
  • Rutherford, NJ
  • Millburn, NJ

Publications

Us Patents

Bonding Scheme Using Group Vb Metallic Layer

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US Patent:
56223056, Apr 22, 1997
Filed:
May 10, 1995
Appl. No.:
8/438296
Inventors:
Donald D. Bacon - Somerset NJ
Ho S. Chen - Lebanon NJ
Avishay Katz - Westfield NJ
King L. Tai - Berkeley Heights NJ
Assignee:
Lucent Technologies Inc. - Murray Hill NJ
International Classification:
B23K 3102
B23K 120
US Classification:
2281231
Abstract:
A method for bonding one body to another, such as a laser device to a submount, uses a metallic layer composed of a Group VB metal, such as niobium, sandwiched between a non-metallic layer and solder layer formed by an approximate Au-Sn eutectic layer. Advantageously the Group VB layer is formed at a submount temperature of less than approximately 201. degree. C. , advantageously less than approximately 125. degree. C. , and preferably less than approximately 101. degree. C. --advantageously to a thickness in the approximate range 0. 05. mu. m to 0. 2. mu. m, or even thinner if pinholes do not develop. The non-metallic layer is located on one of the bodies, and the other body has a metallic coating advantageously capped with an Au layer.

Method Of Making Magnetic Devices Including Amorphous Alloys

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US Patent:
40564118, Nov 1, 1977
Filed:
May 14, 1976
Appl. No.:
5/686456
Inventors:
Ho Sou Chen - Warren NJ
Ernst Michael Gyorgy - Madison NJ
Harry John Leamy - New Providence NJ
Richard Curry Sherwood - New Providence NJ
International Classification:
H01F 100
C22B 4300
US Classification:
148121
Abstract:
The disclosed magnetic devices, including a magnetically coupled conducting path, incorporate amorphous, low magnetostriction alloys of the general formula (Co. sub. a Fe. sub. b T. sub. c). sub. i X. sub. j, the "metallic" constituents thereof being within the parenthetical expression. T, in the formulation, is selected from among Ni, Cr, Mn, V, Ti, Mo, W, Nb, Zr, Pd, Pt, Cu, Ag and Au, X being at least one "glass former" selected from among P, Si, B, C, As, Ge, Al, Ga, In, Sb, Bi and Sn. The "metallic" constituents comprise from 70-90 atomic percent of the alloy with cobalt being present in an amount of at least 70 atomic percent of the "metallic" constituents. The described material is prepared by rapid cooling from the liquid, directly to the shape needed for fabrication of the device (e. g. , tape to be wound to form an inductor core). When the amorphous material is fabricated to its finished geometry, raised to a temperature somewhat below its crystallization temperature and quenched in a high heat of vaporization liquid (e. g.
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Ho Meitzu Chen from Flushing, NY Get Report