Hien T Le

20050058600, Mar 17, 2005

Sep 16, 2003

10/664991

Leonard Bjeldanes - Berkeley CA, US
Hien Le - Berkeley CA, US
Gary Firestone - Berkeley CA, US

A61K049/00
A61K031/138

424009100, 514651000

The invention provides antiandrogenic compositions and methods of use. The general methods deliver an antiandrogen to a host determined to be in need thereof by contacting the host with an effective amount of an antiandrogenic, optionally substituted 3,3′-diindolylmethane (DIM); and detecting a resultant antiandrogenic response in the host. The method may further comprise, prior to the contacting step, determining that the host is in need of the antiandrogen.

20190393042, Dec 26, 2019

Aug 29, 2019

16/554834

- Santa Clara CA, US
Kelvin CHAN - San Ramon CA, US
Hien Minh LE - San Jose CA, US
Sanjay KAMATH - Fremont CA, US
Abhijit Basu MALLICK - Fremont CA, US
Srinivas GANDIKOTA - Santa Clara CA, US
Karthik JANAKIRAMAN - San Jose CA, US

H01L 21/285
C23C 16/02
C23C 16/40
C23C 16/505
C23C 28/00
H01L 21/02
H01L 21/3205
C23C 16/06
H01L 21/768

Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

20170372953, Dec 28, 2017

Jun 26, 2017

15/633366

- Santa Clara CA, US
Kelvin CHAN - San Ramon CA, US
Hien Minh LE - San Jose CA, US
Sanjay KAMATH - Fremont CA, US
Abhijit Basu MALLICK - Fremont CA, US
Srinivas GANDIKOTA - Santa Clara CA, US
Karthik JANAKIRAMAN - San Jose CA, US

H01L 21/768
H01L 21/02
H01L 21/285

Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.