Hien Le

20070012557, Jan 18, 2007

Jul 13, 2005

11/181043

Akihiro Hosokawa - Cupertino CA, US
Hien H. Le - San Jose CA, US

C23C 14/32
C23C 14/00

204192100, 204298160

Embodiments of the present invention generally relate to sputtering of materials. In particular, the invention relates to sputtering voltage used during physical vapor deposition of large area substrates to prevent arcing. One embodiment of the invention describes an apparatus for sputtering materials on rectangular substrates at a voltage less than 400 volts, that comprises a sputtering target; wherein the target is biased at a voltage less than 400 volts during sputtering materials on the rectangular substrates, a grounded shield surrounding the sputtering target, wherein the shortest distance between the grounded shield and the sputtering target is less than the plasma dark space thickness, a magnetron in the back of the sputtering target, where in the edge of the magnetron does not overlap the grounded shield, and an antenna structure placed between the sputtering target and the substrate, wherein the antenna structure is grounded during sputtering.

20070012562, Jan 18, 2007

Jul 11, 2006

11/484333

Hien Minh Le - San Jose CA, US
Akihiro Hosokawa - Cupertino CA, US
Avi Tepman - Cupertino CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 14/00
C23C 14/32

204298160, 204192100

A rectangular magnetron placed at the back of a rectangular sputtering target for coating a rectangular panel and having magnets of opposed polarities arranged to form a gap therebetween corresponding to a plasma track adjacent the target which extends in a closed serpentine or spiral loop. The spiral may have a large number of wraps and the closed loop may be folded before wrapping. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target corresponding to at least the separation of the gap between parallel portions of the loop. A central ferromagnetic shim beneath some magnets in the loop may compensate for vertical droop. The magnetron may be scanned in two alternating double-Z patterns rotated 90 between them.

20070056845, Mar 15, 2007

Apr 6, 2006

11/399122

Yan Ye - Saratoga CA, US
John White - Hayward CA, US
Akihiro Hosokawa - Cupertino CA, US
Hien Le - San Jose CA, US
Elpidio Nisperos - San Jose CA, US
Bradley Stimson - San Jose CA, US

C23C 14/32
C23C 14/00

204192100, 204298120

The present invention generally provides a sputtering apparatus and method in which a sputtering target has a plurality of target sections bonded to a common backing plate. Each segment can be bonded to the common backing plate using a different bonding material. One target segment can be bonded to the backing plate using electrically conductive bonding material while another section is bonded to the backing plate using electrically insulating bonding material. Additionally, each different target section can be separately biased.

20230037450, Feb 9, 2023

Oct 18, 2022

17/968056

- Santa Clara CA, US
Mun Kyu Park - San Jose CA, US
Hien M Le - San Jose CA, US
Chih-Chiang Chuang - Milpitas CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/30
C23C 16/28
C23C 16/455
H01L 21/768
H01L 21/265
H01L 21/223

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

20200395218, Dec 17, 2020

Jun 12, 2020

16/900181

- Santa Clara CA, US
Mun Kyu Park - San Jose CA, US
Hien M Le - San Jose CA, US
Chih-Chiang Chuang - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/30
C23C 16/455
C23C 16/28

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

20190393042, Dec 26, 2019

Aug 29, 2019

16/554834

- Santa Clara CA, US
Kelvin CHAN - San Ramon CA, US
Hien Minh LE - San Jose CA, US
Sanjay KAMATH - Fremont CA, US
Abhijit Basu MALLICK - Fremont CA, US
Srinivas GANDIKOTA - Santa Clara CA, US
Karthik JANAKIRAMAN - San Jose CA, US

H01L 21/285
C23C 16/02
C23C 16/40
C23C 16/505
C23C 28/00
H01L 21/02
H01L 21/3205
C23C 16/06
H01L 21/768

Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

20170372953, Dec 28, 2017

Jun 26, 2017

15/633366

- Santa Clara CA, US
Kelvin CHAN - San Ramon CA, US
Hien Minh LE - San Jose CA, US
Sanjay KAMATH - Fremont CA, US
Abhijit Basu MALLICK - Fremont CA, US
Srinivas GANDIKOTA - Santa Clara CA, US
Karthik JANAKIRAMAN - San Jose CA, US

H01L 21/768
H01L 21/02
H01L 21/285

Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

20140187045, Jul 3, 2014

Jan 29, 2013

13/752769

- Santa Clara CA, US
Hien Minh Le - San Jose CA, US
Young Lee - San Jose CA, US

APPLIED MATERIALS, INC. - Santa Clara CA

H01L 21/02

438694

Methods of filling features with silicon nitride using high-density plasma chemical vapor deposition are described. Narrow trenches may be filled with gapfill silicon nitride without damaging compressive stress. A low but non-zero bias power is used during deposition of the gapfill silicon nitride. An etch step is included between each pair of silicon nitride high-density plasma deposition steps in order to supply sputtering which would normally be supplied by high bias power.