Hao Van Nguyen

7471567, Dec 30, 2008

Jun 29, 2007

11/772002

Seungpil Lee - San Ramon CA, US
Hao Thai Nguyen - San Jose CA, US
Man Lung Mui - Santa Clara CA, US

SanDisk Corporation - Milpitas CA

G11C 16/06
G11C 16/04

36518521, 36518517, 36518518

Bit line-to-bit line noise is discharged in a NAND string prior to sensing a programming condition of a selected non-volatile storage element in the NAND string. A source voltage is applied which boosts the voltage in conductive NAND strings. The voltage boost results in capacitive coupling of noise to neighboring NAND strings. A current pull down device is used to discharge each NAND string prior to performing sensing. After each NAND string is coupled to a discharge path for a predetermined amount of time, bit lines of the NAND string are coupled to voltage sense components for sensing the programming condition of the selected non-volatile storage elements based on a potential of the bit lines. The selected non-volatile storage elements may have a negative threshold voltage. Further, a word line associated with the selected non-volatile storage elements may be set at ground.

7545678, Jun 9, 2009

Jun 29, 2007

11/772009

Seungpil Lee - San Ramon CA, US
Hao Thai Nguyen - San Jose CA, US
Man Lung Mui - Santa Clara CA, US

SanDisk Corporation - Milpitas CA

G11C 16/06
G11C 16/04

36518521, 36518517, 36518518

A NAND string in which bit line-to-bit line noise is discharged prior to sensing a programming condition of a selected non-volatile storage element in the NAND string. A source voltage is applied which boosts the voltage in conductive NAND strings. The voltage boost results in capacitive coupling of noise to neighboring NAND strings. A current pull down device is used to discharge each NAND string prior to performing sensing. After each NAND string is coupled to a discharge path for a predetermined amount of time, bit lines of the NAND string are coupled to voltage sense components for sensing the programming condition of the selected non-volatile storage elements based on a potential of the bit lines. The selected non-volatile storage elements may have a negative threshold voltage. Further, a word line associated with the selected non-volatile storage elements may be set at ground.

7751249, Jul 6, 2010

Jun 27, 2008

12/163115

Seungpil Lee - San Ramon CA, US
Hao Thai Nguyen - San Jose CA, US
Man Lung Mui - Santa Clara CA, US

Sandisk Corporation - Milpitas CA

G11C 16/26

36518521, 36518522, 36518525, 36518517

In a sensing method, accuracy of sensing operations, such as read or verify, in a memory device is improved by avoiding fluctuations in a sense amp supply voltage which can occur when different sense amps are strobed at different times. First and second sets of sense amps perform a sensing operation on respective storage elements, such as in an all bit line configuration. The first set of sense amps is strobed at a first time point. In response, a sensed analog level is converted to digital data. The A/D conversion relies on the sense amp supply voltage being accurate. To avoid a fluctuation in the sense amp supply voltage, a bypass path allows the storage elements associated with the first set of sense amps to continue to draw power from the sense amp supply voltage. The second set of sense amps is strobed at a later, second time point.

7751250, Jul 6, 2010

Jun 27, 2008

12/163133

Seungpil Lee - San Ramon CA, US
Hao Thai Nguyen - San Jose CA, US
Man Lung Mui - Santa Clara CA, US

Sandisk Corporation - Milpitas CA

G11C 16/26

36518521, 36518517, 36518522, 36518525

Accuracy of sensing operations, such as read or verify, in a memory device is improved by avoiding fluctuations in a sense amp supply voltage which can occur when different sense amps are strobed at different times. First and second sets of sense amps perform a sensing operation on respective storage elements, such as in an all bit line configuration. The first set of sense amps is strobed at a first time point. In response, a sensed analog level is converted to digital data. The A/D conversion relies on the sense amp supply voltage being accurate. To avoid a fluctuation in the sense amp supply voltage, a bypass path allows the storage elements associated with the first set of sense amps to continue to draw power from the sense amp supply voltage. The second set of sense amps is strobed at a later, second time point.

20040193601, Sep 30, 2004

Mar 24, 2003

10/395798

Bin Hu - Mountain View CA, US
Thomas Ballantyne - San Francisco CA, US
Dmitri Latypov - San Mateo CA, US
Michael Minuto - Lake Worth FL, US
Hao Nguyen - Lake Worth FL, US

G06F007/00

707/009000

A method and contact list server is provided for modifying an entry name in a contact list of a subscriber unit located at and managed by a remote server. The method includes receiving a request from a subscriber unit to modify an entry name in a contact list, which is used to identify and select a contact list entry. The request includes an old entry name and a new entry name. The method further includes verifying the uniqueness of the requested new entry name, relative to the contact list, disassociating the contact information from the old entry name, and associating the contact information with the new entry name. Where in at least one embodiment, disassociating the contact information from the old entry name and associating the contact information with the new entry name includes modifying a data field, which has the contact name used to identify and select the contact list entry corresponding to the contact information.

20140003176, Jan 2, 2014

Sep 6, 2012

13/605424

Man Lung Mui - Fremont CA, US
Jongmin Park - Cupertino CA, US
Hao Thai Nguyen - San Jose CA, US
Seungpil Lee - San Ramon CA, US

G11C 7/06

365205

A compact and versatile high speed sense amplifier suitable for use in non-volatile memory circuits is presented. The sense amp circuit is connected to first and second supply levels, a first level used for setting a program inhibit level on bit lines and a second level used for pre-charging bit lines for sensing operation. Outside of a data latch, the sense amp can employ only NMOS transistors. The arrangement of the circuit also allows for the discharging the bit line at the same time as transfers the sensing result out to other latches.

20140022841, Jan 23, 2014

Jan 28, 2013

13/751692

Changyuan Chen - San Ramon CA, US
Seungpil Lee - San Ramon CA, US
Yee Lih Koh - Milpitas CA, US
Jongmin Park - Cupertino CA, US
Hao Thai Nguyen - San Jose CA, US
Vamsi Krishna Sakhamuri - San Jose CA, US

SanDisk Technologies Inc. - Plano TX

G11C 16/34
G11C 16/12
G11C 16/04

36518503, 36518509, 36518517, 36518519, 36518522

In a programming operation that includes repeated bitscan, program, and verify steps, the bitscan steps may be hidden by performing bitscan in parallel with program preparation and program steps. The effect of a program step may be predicted from previous observation so that when a bitscan indicates that the memory cells are close to being programmed, a last programming step may be completed without subsequent verification or bitscan steps.

20160055916, Feb 25, 2016

Aug 25, 2014

14/467770

- Plano TX, US
Khanh Nguyen - Fremont CA, US
Hao Nguyen - San Jose CA, US

G11C 16/26
G11C 16/24
G11C 16/34

Rather than supply an internal node of a non-volatile memory's sense amplifier from a supply level through a transistor by applying a voltage to the transistor's gate to clamp the node, the internal node is supplied by an op-amp through a pass gate. The op-amp receives feedback from above the pass gate. This allows a desired voltage level to be more quickly and accurately established on the node. Using a two-step reference level for the op-amp can further increases speed and accuracy. Biasing the op-amp with the external power supply can offer additional advantages.