George C Hsu

44448112, Apr 24, 1984

Dec 3, 1981

6/327256

George Hsu - La Crescenta CA
Harry Levin - Woodland Hills CA
Richard A. Hogle - Arcadia CA
Ananda Praturi - Monrovia CA
Ralph Lutwack - Sunland CA

California Institute of Technology - Pasadena CA

C23C 1308

427213

A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed. Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fludized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product. An apparatus for carrying out this process is also disclosed.

43100490, Jan 12, 1982

Apr 17, 1979

6/030831

John J. Kalvinskas - Pasadena CA
George C. Hsu - La Crescenta CA
John B. Ernest - Santa Ana CA

California Institute of Technology - Pasadena CA

E21B 4324
C10G 2702

166267

High sulfur crude oil is desulfurized by a low temperature (25. degree. -80. degree. C. ) chlorinolysis at ambient pressure in the absence of organic solvent or diluent but in the presence of water (water/oil=0. 3) followed by a water and caustic wash to remove sulfur and chlorine containing reaction products. The process can be practiced at the well site for the recovery of desulfurized oil used to generate steam for injection into the well for enhanced oil recovery.

41219953, Oct 24, 1978

Oct 7, 1976

5/730468

George C. Hsu - La Crescenta CA

The United States of America as represented by the Administrator of the
National Aeronautics and Space Administration - Washington DC

C10G 104
C10G 108
C10L 132
B65G 5304

208 8

A slurry of carbonaceous particles such as coal containing an oil soluble polar substituted oleophilic surfactant, suitably an amine substituted long chain hydrocarbon, is liquefied at high temperature and high hydrogen presence. The pressure of surfactant results in an increase in yield and the conversion product contains a higher proportion of light and heavy oils and less asphaltene than products from other liquefaction processes.

40412334, Aug 9, 1977

Mar 15, 1976

5/666992

James C. Administrator of the National Aeronautics and Space Fletcher
William A. Mueller - Glendale CA
George C. Hsu - La Crescenta CA
Harold E. Marsh - La Canada CA

C08B 322
C08B 1120
C08B 1502
C08B 3118

536 56

A novel aldehyde-containing polymer (ACP) is prepared by reaction of a polysaccharide with periodate to introduce aldehyde groups onto the C. sub. 2 - C. sub. 3 carbon atoms and by introduction of ether and ester groups onto the pendant primary hydroxyl to modify solubility characteristics. The ACP is utilized to absorb nitrogen bases such as urea in vitro or in vivo.

43145256, Feb 9, 1982

Mar 3, 1980

6/126324

George C. Hsu - La Crescenta CA
Harry Levin - Woodland Hills CA
Richard A. Hogle - Arcadia CA
Ananda Praturi - Monrovia CA
Ralph Lutwack - Sunland CA

California Institute of Technology - Pasadena CA

C23C 1308

118716

A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed. Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fluidized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product. An apparatus for carrying out this process is also disclosed.

41463676, Mar 27, 1979

Feb 16, 1978

5/878253

George C. Hsu - La Crescenta CA

The United States of America as represented by the Administrator of the
National Aeronautics and Space Administration - Washington DC

C10L 910
C10B 5700

44 1R

Organic sulfur is removed from coal by treatment with an organic solution of iron pentacarbonyl. Organic sulfur compounds can be removed by reaction of the iron pentacarbonyl with coal to generate CO and COS off-gases. The CO gas separated from COS can be passed over hot iron filings to generate iron pentacarbonyl.

40812502, Mar 28, 1978

Aug 27, 1976

5/718137

George C. Hsu - La Crescenta CA
George R. Gavalas - Pasadena CA
Partha S. Ganguli - Pasadena CA
Sarkis H. Kalfayan - La Canada CA

California Institute of Technology - Pasadena CA

C10L 910
C10B 5700

44 1R

A method of chlorinolysis of coal in an organic solvent at a moderate temperature and atmospheric pressure has been proven to be effective in removing sulfur, particularly the organic sulfur, from coal. Chlorine gas is bubbled through a slurry of moist coal in chlorinated solvent. The chlorinated coal is separated, hydrolyzed and then dechlorinated. Preliminary results of treating a high sulfutr (4. 77%S) bituminous coal show that up to 70% organic sulfur, 90% pyritic sulfur and 76% total sulfur can be removed. The treated coal is dechlorinated by heating at 500. degree. C. The presence of moisture helps to remove organic sulfur.

46649441, May 12, 1987

Jan 31, 1986

6/824803

George C. Hsu - La Crescenta CA
Naresh K. Rohatgi - W. Corine CA

The United States of America as represented by the United States
Department of Energy - Washington DC

B05D 700
H01L 21205

427 87

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200. degree. -1500. degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.