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Ge Wang

from Columbus, OH
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Related to:
Rui Wang, 46Hua Chen Wang, 94Bing Wang, 38Andrew H Wang, 85Stanley W Wang, 44Betty C Wang, 86Miawjen L Wang, 74Jeffrey Waysing Wang, 43Jeffrey W Wang
Connected to:
Adele R Wang, 107Aiyuan Wang, 52Akiet Wang, 74Alene P Wang, 52Amanda K Wang, 46Amei Wang, 61Amity H Wang, 70Amy Wang, 59Anastasia S Wang, 85Ange Wang, 35

Ge Wang Phones & Addresses

  • Columbus, OH

Education

School / High School: New York University School of Law

Ranks

Licence: New York - Currently registered Date: 2010

Professional Records

Lawyers & Attorneys

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Ge Wang - Lawyer

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Address:
Freshfields Bruckhaus Deringer
(106) 535-4526 (Office)
Licenses:
New York - Currently registered 2010
Education:
New York University School of Law

Resumes

Resumes

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Ge Wang

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Work:
Hyatt Regency Jun 2015 - Jul 2015
Finance Trainee
Agricultural Bank of China Jun 2012 - Sep 2012
Customer Service
Education:
The Chinese University of Hong Kong 2014 - 2015
Beijing Normal University, Zhuhai 2010 - 2014
Bachelors, Economics, Finance
Skills:
Microsoft Powerpoint
顾客服务
Microsoft Office
English
Teamwork
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Ge Wang

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Ge Wang

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Ge Wang Photo 5

Ge Wang

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Ge Wang

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Ge Wang

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Ge Wang

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Ge Wang

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Publications

Wikipedia References

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Ge Wang

Work:
Position:

Chief technology officer • Computer scientist • Musician

Education:
Academic degree:

Professor

Skills & Activities:
Master status:

Student

Us Patents

Method Of Depositing Chromium And Silicon On A Metal To Form A Diffusion Coating

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US Patent:
54927277, Feb 20, 1996
Filed:
May 10, 1994
Appl. No.:
8/240350
Inventors:
Robert A. Rapp - Columbus OH
Ge Wang - Columbus OH
Endang Pangestuti - Columbus OH
Assignee:
The Ohio State University Research Foundation - Columbus OH
International Classification:
C23C 1600
US Classification:
427253
Abstract:
A method for the simultaneous deposition of chromium and silicon to form a diffusion coating on a workpiece uses a halide-activated cementation pack with a dual halide activator. Elemental metal powders may be employed with the dual activator. A two-step heating schedule prevents blocking a chromium carbide from forming at the surface of the workpiece. Small contents of either Ce or V can be added to the Cr+Si contents of the coating by introducing oxides of Ce or V into the filler of the pack.

Method Of Depositing Chromium And Silicon On A Metal To Form A Diffusion Coating

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US Patent:
55892205, Dec 31, 1996
Filed:
Oct 30, 1995
Appl. No.:
8/550108
Inventors:
Robert A. Rapp - Columbus OH
Ge Wang - Columbus OH
Endang Pangestuti - Palembang, ID
Assignee:
The Ohio State University Research Foundation - Columbus OH
International Classification:
B05D 512
US Classification:
4271261
Abstract:
A method for the simultaneous deposition of chromium and silicon to form a diffusion coating on a workpiece uses a halide-activated cementation pack with a dual halide activator. Elemental metal powders may be employed with the dual activator. A two-step heating schedule prevents blocking a chromium carbide from forming at the surface of the workpiece. Small contents of either Ce or V can be added to the Cr+Si contents of the coating by introducing oxides of Ce or V into the filler of the pack.
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Ge Wang from Columbus, OH Get Report