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Feng Qian

from San Jose, CA
Age ~67
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Also known as:
Feng Orian, Xia Qian Feng, Xia Pat Feng, Feng Wu, Pat X Fent, Fengqi An
Related to:
Jian Wu, 62Sundi DuongHaihua Wu, 63Synthia Lynn Duong, 47Wu Jian, 65William PatWilliam T Pat, 72A Duong, 82Steven K Duong, 77Bao Q Duong, 57Nancy Z Pat, 70Andy Duong, 40Hao C Duong, 44Geng X Qian, 75Wuxu Chen Xu, 84Shufen Wu, 52David W Pat, 39
Connected to:
Alex D Qian, 28Annie Qian, 32Cathy Qian, 43Chai Qian, 40Connie R Qian, 60Dai Qian, 51Daniel Qian, 67Dapeng Qian, 63Fei G Qian, 41Feng F Qian, 67

Feng Qian Phones & Addresses

  • San Jose, CA
  • 1721 Garvey Ave, Alhambra, CA 91803
  • 1141 Fairview Ave, Arcadia, CA 91007 (626) 445-4696
  • San Gabriel, CA
  • 5324 Baldwin Ave, Temple City, CA 91780 (626) 579-6158

Resumes

Resumes

Feng Qian Photo 1

Professor At Dept. Pharmacology & Pharmaceutical Sciences, Tsinghua University

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Position:
Professor at Dept. Pharmacology & Pharmaceutical Sciences, Tsinghua University
Location:
Beijing City, China
Industry:
Pharmaceuticals
Work:
Dept. Pharmacology & Pharmaceutical Sciences, Tsinghua University - Beijing, China since Aug 2012
Professor
Bristol-Myers Squibb, New Brunswick, New Jersey - New Brunswick, NJ, USA Sep 2011 - Jul 2012
Principal Scientist
Bristol-Myers Squibb Apr 2007 - Aug 2011
Senior Research Investigator I/II
Bristol-Myers Squibb Apr 2003 - Mar 2007
Research Investigator I/II
Education:
Case Western Reserve University 1998 - 2003
Ph.D., Biomedical Engineering, Biomaterials, Drug Delivery Tsinghua University 1990 - 1998
MS, Materials Science and Engineering
Skills:
Drug Delivery
Pharmaceutics
Drug Development
Technology Transfer
Biomaterials
Pharmaceutical Industry
Honor & Awards:
Chemistry Leadership Award, Bristol-Myers Squibb Company, 2007; Whitaker Foundation Traineeship, The Whitaker Foundation, 1998-1999; Guang-Hua Fellowship, Tsinghua University, 1997
Languages:
Chinese
English
Feng Qian Photo 2

Professor At Dept. Pharmacology & Pharmaceutical Sciences, Tsinghua University

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Position:
Professor at Dept. Pharmacology & Pharmaceutical Sciences, Tsinghua University
Location:
Beijing City, China
Industry:
Pharmaceuticals
Work:
Dept. Pharmacology & Pharmaceutical Sciences, Tsinghua University - Beijing, China since Aug 2012
Professor
Bristol-Myers Squibb, New Brunswick, New Jersey - New Brunswick, NJ, USA Sep 2011 - Jul 2012
Principal Scientist
Bristol-Myers Squibb Apr 2007 - Aug 2011
Senior Research Investigator I/II
Bristol-Myers Squibb Apr 2003 - Mar 2007
Research Investigator I/II
Education:
Case Western Reserve University 1998 - 2003
Ph.D., Biomedical Engineering, Biomaterials, Drug Delivery Tsinghua University 1990 - 1998
MS, Materials Science and Engineering
Skills:
Drug Delivery
Pharmaceutics
Drug Development
Technology Transfer
Biomaterials
Pharmaceutical Industry
Honor & Awards:
Chemistry Leadership Award, Bristol-Myers Squibb Company, 2007; Whitaker Foundation Traineeship, The Whitaker Foundation, 1998-1999; Guang-Hua Fellowship, Tsinghua University, 1997
Languages:
Chinese
English
Feng Qian Photo 3

Feng Qian

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Feng Qian Photo 4

Feng Qian

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Feng Qian Photo 5

Phd Student At University Of California, Irvine

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Position:
Staff Engineer at Broadcom, PhD candidate at University of California, Irvine
Location:
Greater Los Angeles Area
Industry:
Electrical/Electronic Manufacturing
Work:
Broadcom since Oct 2010
Staff Engineer
University of California, Irvine since Sep 2006
PhD candidate
Western Digital Jun 2009 - Sep 2009
Engineering Intern
Auburn University Sep 2004 - Aug 2006
Master of Science
Education:
University of California, Irvine 2006 - 2010
PhD, Electrical Engieering• Created a theoretical model for gain characterization of silicon waveguide amplifier with erbium doped ions. • Developed semiconductor processing technologies and integrating them in fully functional devices. • Designed, fabricated and tested graded-index silicon waveguides implemented by nanotechnology. • Achieved real-time high resolution imaging & dynamics monitoring by a single detector. Auburn University 2004 - 2006
• Microfabricated and characterized sub-micron free-standing silver membranes for MEMS system. Southeast University 2003 - 2004
• Successfully designed and tested 622 Mb/s data-decision circuit by mixed-signal 0.6 μm CMOS technology. • Designed a core chip of 0.18 μm CMOS wireless receiver for Bluetooth. Nanjing University of Aeronautics and Astronautics 1999 - 2003
Bachelor of Engineering, Information Engineering• Top 3 in College Students English Speaking Contest of Jiangsu Province • Third prize of college students advanced math contest. NSFZ
Feng Qian Photo 6

Feng Qian

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Location:
United States
Feng Qian Photo 7

Feng Qian

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Location:
United States

Business Records

Name / Title
Company / Classification
Phones & Addresses
Feng Qian
President
Fo Kwang Shan Buddhist Association Inc
Membership Organization
3456 Glenmark Dr, Whittier, CA 91745
Feng Qian
President
Buddhas Light His Lai School
Elementary/Secondary School
3456 Glenmark Dr, Whittier, CA 91745
Feng Qian
President
INTERNATIONAL BUDDHIST PROGRESS SOCIETY
3456 Glenmark Dr, Hacienda Heights, CA 91745
3456 Glenmark Dr, Whittier, CA 91745
Feng Qian
President
HUAI YUAN CO., INC
*1300 E Main St #1, Alhambra, CA 91801
1300 E Main St, Alhambra, CA 91801
Feng Qian
Clean Natural Water Treatment Technology, LLC
Water Treatment
1608 Monte Corvino Way, Burlingame, CA 94010

Publications

Us Patents

Method Of Making Semiconductor Device With Self-Aligned Insulator

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US Patent:
57121737, Jan 27, 1998
Filed:
Jan 24, 1996
Appl. No.:
8/590981
Inventors:
Yowjuang W. Liu - San Jose CA
Feng Qian - Campbell CA
Tze-Kwai Kelvin Lai - San Jose CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H01L 2184
H01L 21265
US Classification:
437 24
Abstract:
A semiconductor device having the advantages of an SOI structure without the attendant disadvantages is obtained by implanting oxygen ions using the gate electrode as a mask, and heating to form thin, self-aligned buried oxide regions extending from a field oxide region under source/drain regions self-aligned with the side surfaces of the gate electrode. In other embodiments, the thin buried oxide layer extends from a point in close proximity to the field oxide region and/or partially under the gate electrode.

Self-Convergence Of Post-Erase Threshold Voltages In A Flash Memory Cell Using Transient Response

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US Patent:
60260262, Feb 15, 2000
Filed:
Dec 5, 1997
Appl. No.:
8/985833
Inventors:
Feng Frank Qian - Campbell CA
Hsingya Arthur Wang - Saratoga CA
Assignee:
Hyundai Electronics America, Inc. - San Jose CA
International Classification:
G11C 1604
US Classification:
3651853
Abstract:
An erase method provides for self-converging erase on a flash memory cell by rapidly switching a bias on a control gate while a lateral field is present in a channel region. Preferably, the lateral field is provided by differentially biasing the source and drain of the cell and the change in bias of the control gate is sufficiently fast to induce a transient response at the floating gate. The net transient vertical field formed across a tunneling oxide between the channel region and the floating gate causes moderate hot carrier injection between the channel region and the floating gate. This method is self-converging, since carrier injection to the floating gate will not happen unless a sufficient number of carriers are removed from the floating gate during the array step. Since the bulk of the self-converging effect occurs as the control gate voltage is transitioning and shortly thereafter, very little time is needed at the end of an erase pulse to effect this response.

Semiconductor Device With Self-Aligned Insulator

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US Patent:
59557672, Sep 21, 1999
Filed:
Aug 8, 1997
Appl. No.:
8/907452
Inventors:
Yowjuang W. Liu - San Jose CA
Feng Qian - Campbell CA
Tze-Kwai Kelvin Lai - San Jose CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H01L 2976
H01L 2701
US Classification:
257369
Abstract:
A semiconductor device having the advantages of an SOI structure without the attendant disadvantages is obtained by implanting oxygen ions using the gate electrode as a mask, and heating to form thin, self-aligned buried oxide regions extending from a field oxide region under source/drain regions self-aligned with the side surfaces of the gate electrode. In other embodiments, the thin buried oxide layer extends from a point in close proximity to the field oxide region and/or partially under the gate electrode.

Self-Convergence Of Post-Erase Threshold Voltages In A Flash Memory Cell Using Transient Response

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US Patent:
61696935, Jan 2, 2001
Filed:
Oct 28, 1999
Appl. No.:
9/429239
Inventors:
Feng Frank Qian - Campbell CA
Hsingya Arthur Wang - Saratoga CA
Assignee:
Hyundai Electronics America, Inc. - San Jose CA
International Classification:
G11C 1604
US Classification:
3651853
Abstract:
An erase method provides for self-converging erase on a flash memory cell by rapidly switching a bias on a control gate while a lateral field is present in a channel region. Preferably, the lateral field is provided by differentially biasing the source and drain of the cell and the change in bias of the control gate is sufficiently fast to induce a transient response at the floating gate. The net transient vertical field formed across a tunneling oxide between the channel region and the floating gate causes moderate hot carrier injection between the channel region and the floating gate. This method is self-converging, since carrier injection to the floating gate will not happen unless a sufficient number of carriers are removed from the floating gate during the array step. Since the bulk of the self-converging effect occurs as the control gate voltage is transitioning and shortly thereafter, very little time is needed at the end of an erase pulse to effect this response.

Multi-Viewport Transcoding For Volumetric Video Streaming

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US Patent:
20200404327, Dec 24, 2020
Filed:
Jun 20, 2019
Appl. No.:
16/447144
Inventors:
- Atlanta GA, US
Jackson Jarrell Pair - Los Angeles CA, US
Vijay Gopalakrishnan - Edison NJ, US
Feng Qian - Minneapolis MN, US
Assignee:
Indiana University Research and Technology Corporation - Indianapolis IN
International Classification:
H04N 19/597
G06T 7/73
H04N 13/282
H04N 13/243
Abstract:
In one example, a processing system including at least one processor may obtain at least one frame of a volumetric video, obtain a first viewport of a client device, render a plurality of two-dimensional subframes comprising two-dimensional projections of the at least one frame of the volumetric video, based upon the first viewport of the client device, and transmit the plurality of two-dimensional subframes to the client device. In another example, a processing system including at least one processor may request a volumetric video from a network-based proxy, provide a viewport to the network-based proxy, obtain a plurality of two-dimensional subframes from the network-based proxy in accordance with the viewport, select at least one of the plurality of two-dimensional subframes to present, and display the at least one two-dimensional subframe that is selected.

Tile Scheduler For Viewport-Adaptive Panoramic Video Streaming

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US Patent:
20200128280, Apr 23, 2020
Filed:
Oct 18, 2018
Appl. No.:
16/164308
Inventors:
- Atlanta GA, US
Peshala Pahalawatta - Burbank CA, US
Vijay Gopalakrishnan - Edison NJ, US
Feng Qian - Minneapolis MN, US
Assignee:
AT&T Intellectual Property I, L.P. - Atlanta GA
The Trustees of Indiana University - Bloomington IN
International Classification:
H04N 21/218
H04N 5/232
G06F 3/0481
Abstract:
Aspects of the subject disclosure may include, for example, a method including obtaining media content and a ranking for each tile of the media content based on a plurality of viewports; receiving a request from user equipment to view the media content; obtaining, iteratively, a plurality for predicted fields of view of the user, the predicted fields of view each covering different future time periods; identifying viewports corresponding to the predicted fields of view; sending any remaining tiles corresponding to the closest in time predicted field of view to the user equipment; and sending remaining tiles corresponding to successive predicted fields of view to the user equipment the ranking based and an excess bandwidth. Other embodiments are disclosed.

Methods And Devices For Adapting The Rate Of Video Content Streaming

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US Patent:
20190379875, Dec 12, 2019
Filed:
Jun 6, 2018
Appl. No.:
16/001418
Inventors:
- Atlanta GA, US
- Bloomington IN, US
Jackson Jarrell Pair - Marina Del Rey CA, US
Vikash Sharma - Marina Del Rey CA, US
Feng Qian - Bloomington IN, US
Assignee:
AT&T Intellectual Property I, L.P. - Atlanta GA
THE TRUSTEES OF INDIANA UNIVERSITY - Bloomington IN
International Classification:
H04N 13/161
H04N 19/30
H04N 13/366
Abstract:
Aspects of the subject disclosure may include, for example, identifying FOV and OOS tiles of the video content. The FOV and OOS tiles are received from a video server. The FOV and OOS tiles are encoded using AVC and a first layer of SVC, respectively. Further embodiments include providing the FOV and OOS tiles for presentation on a display, detecting a change in a field of vision, and identifying other FOV tiles of the video content, which comprise a portion of the OOS tiles. Also, embodiments include requesting the portion of the OOS tiles and receiving the portion of the OOS tiles from the video server over the communication network, which are encoded using an enhancement layer of SVC and then provided, to the display, according the enhancement layer in conjunction with the providing of the OOS tiles according to the first layer. Other embodiments are disclosed.

Method Of Dynamic Adaptive Streaming For 360-Degree Videos

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US Patent:
20190281318, Sep 12, 2019
Filed:
Mar 8, 2018
Appl. No.:
15/915513
Inventors:
- Atlanta GA, US
- Indianapolis IN, US
Jackson Jarrell Pair - Marina Del Rey CA, US
Vikash Sharma - Marina Del Rey CA, US
Feng Qian - Bloomington IN, US
Qingyang Xiao - Bloomington IN, US
Assignee:
AT&T Intellectual Property I, L.P. - Atlanta GA
Indiana University Research and Technology Corporation - Indianapolis IN
International Classification:
H04N 19/597
H04N 19/174
H04N 19/147
H04N 13/332
H04N 13/366
Abstract:
Aspects of the subject disclosure may include, for example, maximizing a quality of experience when selecting encoding bitrates for downloading dynamically adaptive -degree video. Other embodiments are disclosed.
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Feng Qian from San Jose, CA, age ~67 Get Report