Fei Liu

8605499, Dec 10, 2013

Apr 22, 2011

13/092247

Leland Chang - New York NY, US
Michael A. Guillorn - Yorktown Heights NY, US
Dechao Guo - Fishkill NY, US
Fei Liu - Yorktown Heights NY, US
Keith Kwong Hon Wong - Wappingers Falls NY, US

International Business Machines Corporation - Armonk NY

G11C 11/50

365164, 365149, 365226

Systems and methods for operating a nanometer-scale cantilever beam with a gate electrode. An example system includes a drive circuit coupled to the gate electrode where a drive signal from the circuit may cause the beam to oscillate at or near the beam's resonance frequency. The drive signal includes an AC component, and may include a DC component as well. An alternative example system includes a nanometer-scale cantilever beam, where the beam oscillates to contact a plurality of drain regions.

8645304, Feb 4, 2014

Aug 19, 2011

13/213273

Huijing Jiang - White Plains NY, US
Fei Liu - Scarsdale NY, US
Aurelie C. Lozano - Scarsdale NY, US

International Business Machines Corporation - Armonk NY

G06N 5/02

706 47

Structural changes in causal relationship over time may be detected, for example, by a Markov switching vector autoregressive model that detects and infers the structural changes in the causal graphs.

20120092771, Apr 19, 2012

Oct 18, 2010

12/906697

Fei Liu - Mount Kisco NY, US
Qiqing (Christine) Ouyang - Yorktown Heights NY, US
Keith Kwong Hon Wong - Wappingers Falls NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

G02B 5/18
H01L 21/30

359576, 438703, 257E21211

An embedded vertical optical grating, a semiconductor device including the embedded vertical optical grating and a method for forming the same. The method for forming the embedded optical grating within a substrate includes depositing a hard mask layer on the substrate, patterning at least one opening within the hard mask layer, vertically etching a plurality of scallops within the substrate corresponding to the at least one opening within the hard mask layer, removing the hard mask layer, and forming an oxide layer within the plurality of scallops to form the embedded vertical optical grating.

20120278051, Nov 1, 2012

Apr 29, 2011

13/098044

Huijing Jiang - White Plains NY, US
Young Min Lee - Old Westbury NY, US
Fei Liu - Scarsdale NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

G06F 17/10
G06F 19/00
G01R 19/00

703 2, 702 64

Multi-step statistical modeling in one embodiment of the present disclosure enables anomaly detection, forecasting and/or root cause analysis of the energy consumption for a portfolio of buildings using multi-step statistical modeling. In one aspect, energy consumption data associated with a building, building characteristic data associated with the building, building operation and activities data associated with the building, and weather data are used to generate a variable based degree model. A base load factor, a heating coefficient and a cooling coefficient associated with the building and an error term are determined from the variable based degree model and used to generate a plurality of multivariate regression models. A time series model is generated for the error term to model seasonal factors which reflect monthly dependence on energy use and an auto-regressive integrated moving average model (ARIMA) which reflects temporal dependent patterns of the energy use.

20130146948, Jun 13, 2013

Sep 21, 2012

13/624307

International Business Machines Corporation - Armonk NY, US
Fei Liu - Yorktown Heights NY, US
Ying Zhang - Yorktown Heights NY, US

International Business Machines Corporation - Armonk NY

H01L 29/84

257254, 257E29324

A structure includes a silicon layer disposed on a buried oxide layer that is disposed on a substrate; at least one transistor device formed on or in the silicon layer, the at least one transistor having metallization; a released region of the silicon layer disposed over a cavity in the buried oxide layer; a back end of line (BEOL) dielectric film stack overlying the silicon layer and the at least one transistor device; a nitride layer overlying the BEOL dielectric film stack; a hard mask formed as a layer of hafnium oxide overlying the nitride layer; and an opening made through the layer of hafnium oxide, the layer of nitride and the BEOL dielectric film stack to expose the released region of the silicon layer disposed over the cavity in the buried oxide layer. The hard mask protects the underlying material during a MEMS/NEMS HF vapor release procedure.

20130183553, Jul 18, 2013

Jan 12, 2012

13/349255

Hariklia Deligianni - Tenafly NJ, US
Harold J. Hovel - Katonah NY, US
Fei Liu - Yorktown Heights NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01M 10/42
H01M 4/04
H01M 2/20

429 61, 296231, 296235

A useful lifetime of an energy storage device can be extended by providing a series connection of a battery cell and an self-programming fuse. A plurality of series connections of a battery cell and an self-programming fuse can then be connected in a parallel connection to expand the energy storage capacity of the energy storage device. Each self-programming fuse can be a strip of a metal semiconductor alloy material, which electromigrates when a battery cell is electrically shorted and causes increases in the amount of electrical current therethrough. Thus, each self-programming fuse is a self-programming circuit that opens once the battery cell within the same series connection is shorted.

20130189813, Jul 25, 2013

Mar 14, 2013

13/827401

International Business Machines Corporation - Armonk NY, US
Robert HANNON - Wappingers Falls NY, US
Subramanian S. IYER - Mount Kisco NY, US
Steven J. KOESTER - Ossining NY, US
Fei LIU - Mount Kisco NY, US
Sampath PURUSHOTHAMAN - Yorktown Heights NY, US
Albert M. YOUNG - Fishkill NY, US
Roy R. YU - Poughkeepsie NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 25/00

438109

A computer readable medium encoded with a program for fabricating a 3D integrated circuit structure is provided. The program includes instructions for performing the following process. A first active circuitry layer wafer that includes active circuitry is provided, and a first portion of the first active circuitry layer wafer is removed such that a second portion of the first active circuitry layer wafer remains. Another wafer that includes active circuitry is provided, and the other wafer is bonded to the second portion of the first active circuitry layer wafer.

20200080957, Mar 12, 2020

Nov 15, 2019

16/684888

- Armonk NY, US
Hariklia Deligianni - Alpine NJ, US
Fei Liu - Yorktown Heights NY, US

G01N 27/327
G01N 27/30
G01N 27/36
C23C 16/40
C23C 16/56
C23C 16/02
A61B 5/145
A61B 5/1468
A61B 5/00
A61B 5/04

Embodiments of the invention are directed to a system for detecting neurotransmitters. A non-limiting example of the system includes a porous electrode. A system can also include a pH sensor attached to the porous electrode, wherein the pH sensor includes a sensing electrode and a reference electrode. The system can also include electronic circuitry in communication with the pH sensor.