Duy Nguyen

7848840, Dec 7, 2010

Mar 20, 2008

12/052024

Ritchie Dao - San Jose CA, US
Derek Brodie - Sunnyvale CA, US
Scott Olszewski - Sunnyvale CA, US
Duy D Nguyen - Milpitas CA, US
Chunlei Zhang - Santa Clara CA, US

Applied Materials, Inc. - Santa Clara CA

G06F 19/00
G05B 13/00
G05B 11/42
G05D 23/00

700121, 700 37, 700 42, 700120, 700300, 21912158

Methods and systems for adaptively controlling process parameters in semiconductor manufacturing equipment. An embodiment provides for gain scheduling of PID controllers across recipe steps. One embodiment provides a method for controlling a chuck temperature during a semiconductor manufacturing process, the method employing a first set of proportional-integral-derivative (PID) values in a PID controller to control the chuck temperature at a first setpoint in a first step of a process recipe and employing a second set of PID values in the PID controller to control the chuck temperature at a second setpoint, different than the first setpoint, in a second step of the process recipe. The methods and systems provide reduced controller response times where process parameter setpoint between steps of a process recipe span a wide range.

8404598, Mar 26, 2013

Aug 6, 2010

12/851606

Bryan Liao - Saratoga CA, US
Katsumasa Kawasaki - Los Gatos CA, US
Yashaswini Pattar - Palo Alto CA, US
Sergio Fukuda Shoji - San Jose CA, US
Duy D. Nguyen - Milpitas CA, US
Kartik Ramaswamy - San Jose CA, US
Ankur Agarwal - Mountain View CA, US
Phillip Stout - Santa Clara CA, US
Shahid Rauf - Pleasanton CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/302

438714, 438706, 438710, 216 68

Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

20110186545, Aug 4, 2011

Oct 15, 2010

12/905624

Walter R. MERRY - Sunnyvale CA, US
Sergio Fukuda SHOJI - San Jose CA, US
Chunlei ZHANG - Santa Clara CA, US
Yashaswini B. PATTAR - Palo Alto CA, US
Duy D. NGUYEN - Milpitas CA, US
Tina TSONG - San Jose CA, US
Shane C. NEVIL - Livermore CA, US
Fernando M. SILVEIRA - Livermore CA, US
Brad L. MAYS - San Jose CA, US
Kartik RAMASWAMY - San Jose CA, US
Hamid NOORBAKHSH - Fremont CA, US

APPLIED MATERIALS, INC. - Santa Clara CA

C23F 1/08
C23F 1/00
C23C 16/50
C23C 16/458
C23C 16/52
G05D 23/00

216 59, 427569, 15634527, 118666, 700211

Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

20120048467, Mar 1, 2012

Mar 3, 2011

13/040149

Kartik Ramaswamy - San Jose CA, US
Bryan Liao - Saratoga CA, US
Sergio Shoji - San Jose CA, US
Duy D. Nguyen - Milpitas CA, US
Hamid Noorbakhsh - Fremont CA, US
David Palagashvili - Mountain View CA, US

Applied Materials, Inc. - Santa Clara CA

C23F 1/08
F28F 27/00
G05D 7/06
G05D 23/19
B05C 11/00
C23C 16/52

15634527, 118708, 118697, 700282, 165200

Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

20120132397, May 31, 2012

May 19, 2011

13/111334

Fernando M. Silveira - Livermore CA, US
Hamid Tavassoli - Cupertion CA, US
Xiaoping Zhou - San Jose CA, US
Shane C. Nevil - Livermore CA, US
Douglas A. Buchberger - Livermore CA, US
Brad L. Mays - Findlay OH, US
Tina Tsong - San Jose CA, US
Yashaswini B. Pattar - Palo Alto CA, US
Duy D. Nguyen - Milpitas CA, US
Walter R. Merry - Sunnyvale CA, US

APPLIED MATERIALS, INC. - Santa Clara CA

F28D 15/00
C23C 16/52
B05C 13/02
C23C 16/458

16510413, 118723 R, 118699, 15634553, 15634526, 118710, 118712

Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

20130213935, Aug 22, 2013

Mar 25, 2013

13/849729

APPLIED MATERIALS, INC. - , US
KATSUMASA KAWASAKI - Los Gatos CA, US
YASHASWINI PATTAR - Palo Alto CA, US
SERGIO FUKUDA SHOJI - San Jose CA, US
DUY D. NGUYEN - Milpitas CA, US
KARTIK RAMASWAMY - San Jose CA, US
ANKUR AGARWAL - Mountain View CA, US
PHILLIP STOUT - Santa Clara CA, US
SHAHID RAUF - Pleasanton CA, US

APPLIED MATERIALS, INC. - Santa Clara CA

C23F 1/00

216 71, 216 67

Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

20190238633, Aug 1, 2019

Jun 29, 2018

16/024182

- San Jose CA, US
Navindra Yadav - Cupertino CA, US
Umamaheswaran Arumugam - San Jose CA, US
Michael Watts - Mill Valley CA, US
Shashi Gandham - Fremont CA, US
Darshan Shrinath Purandare - Fremont CA, US
Duy Nguyen - San Jose CA, US
Hai Vu - San Jose CA, US
Kai Zhu - San Jose CA, US
Aiyesha Ma - San Francisco CA, US
Tapan Shrikrishna Patwardhan - Mountain View CA, US
Jothi Prakash Prabakaran - Fremont CA, US

H04L 29/08
H04L 12/24
H04L 12/26

Aspects of the disclosed technology provide methods for automatically tuning load-balancer configurations in a network environment. In some implementations, a process of the disclosed technology includes steps for collecting flow records of traffic flow segments at a middle box in a network environment, the traffic flow segments corresponding to one or more traffic flows passing through the middle box, analyzing the flow records to identify one or more traffic patterns in the network environment, and automatically updating a load balancer configuration based on the one or more traffic patterns, wherein updating the load balancer configuration improves at least one traffic flow parameter for at least one of the traffic flows passing through the middle box. Systems and machine-readable media are also provided.

20190229995, Jul 25, 2019

May 21, 2018

15/985520

- San Jose CA, US
Navindra Yadav - Cupertino CA, US
Umamaheswaran Arumugam - San Jose CA, US
Michael Watts - Mill Valley CA, US
Shashi Gandham - Fremont CA, US
Prasannakumar Jobigenahally Malleshaiah - Sunnyvale CA, US
Duy Nguyen - San Jose CA, US
Hai Vu - San Jose CA, US
Aiyesha Ma - San Francisco CA, US
Tapan Shrikrishna Patwardhan - Mountain View CA, US
Kai Zhu - San Jose CA, US
Jothi Prakash Prabakaran - Fremont CA, US

H04L 12/24
H04L 12/26

Systems, methods, and computer-readable media for flow stitching network traffic flow segments at a middlebox in a network environment. In some embodiments, flow records of traffic flow segments at a middlebox in a network environment are collected. The flow records can include transaction identifiers assigned to the traffic flow segments. Sources and destinations of the traffic flow segments with respect to the middlebox can be identified using the flow records. Further, the traffic flow segments can be stitched together to form a plurality of stitched traffic flows at the middlebox based on the transaction identifiers and the sources and destinations of the traffic flow segments in the network environment with respect to the middlebox. A configuration of the middlebox operating in the network environment can be identified based on the stitched traffic flows at the middlebox in the network environment.